MURS340 & MURS360
Document Number 88816
04-Aug-05
Vishay General Semiconductor
www.vishay.com
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DO-214AB (SMC)
New Product
Surface Mount Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV) 3.0 A
VRRM 400 V, 600 V
IFSM 125 A
trr 50 ns
VF1.05 V
Tj max. 175 °C
Features
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol MURS340 MURS360 Unit
Device Marking Codes MG MJ
Maximum repetitive peak reverse voltage VRRM 400 600 V
Working peak reverse voltage VRWM 400 600 V
Maximum DC blocking voltage VDC 400 600 V
Maximum average forward rectified current at:
(See figure 1)
TL = 130 °C
TL = 115 °C
IF(AV) 3.0
4.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 125 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
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Document Number 88816
04-Aug-05
MURS340 & MURS360
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified#
Notes:
(1) Pulse test: tp = 300 µs, duty cycle 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol MURS340 MURS360 Unit
Maximum instantaneous
forward voltage (1)
IF = 3.0 A,
IF = 4.0 A,
IF = 3.0 A,
TJ = 25 °C
TJ = 25 °C
TJ = 150 °C
VF 1.25
1.28
1.05
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 150 °C
IR 10
250
µA
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 50 ns
Maximum reverse recovery
time
at IF = 1.0 A, di/dt = 50 A/µs,
VR = 30 V, Irr = 10 % IRM
trr 75 ns
Maximum forward recovery
time
IF = 1.0 A, di/dt = 100 A/µs,
Rec. to 1.0 V
tfr 25 ns
Parameter Symbol MURS340 MURS360 Unit
Typical thermal resistance junction to ambient RθJL 11 °C/W
Figure 1. Forward Current Derating Curve
0
2
3
4
5
25 50 75 100 125 150 175
Average Forward Current (A)
TL-- Lead Temperature ( °C)
1
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
25
0
50
75
100
125
150
1 10010
Average Forward Current (A)
Number of Cycles at 60 HZ
MURS340 & MURS360
Document Number 88816
04-Aug-05
Vishay General Semiconductor
www.vishay.com
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Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Instantaneous Forward Voltage (V)
0.1
10
1
100
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
Instantaneous Forward Current (A)
T
J
= 125°C
T
J
= 150°C
T
J
= 100°C
T
J
=25°C
020 6040 10080
Instantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage (%)
0.01
0.1
10
1
100
1000
T
J
=25°C
T
J
= 150°C
T
J
= 100°C
T
J
= 125°C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Switching Characteristics
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1
10
1
10
100
100
1000
Stored Charge / Reverse Recovery Time
(nC/ns)
Junction Temperature ( °C)
25 50
0
20
40
60
80
75 100 125
100
120
Trr
Qrr
1A, 50A/ µs, 30V
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.185 MAX.
(4.69 MAX.)
0.320 REF
0.126 MIN.
(3.20 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
0 (0)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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