KST-3037-001 1
BC846UF
NPN Silicon Transistor
7
Descriptions
• General purpose application
• Switching application
Featur es
• High voltage : VCEO=55V
• Complementary pair with BC856UF
Ordering Information
Type NO. Marking Package Code
BC846UF AS SOT-323F
: hFE rank
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne ctions
1. Bas e
2. Emitter
3. Collector
2.1±0.1
1.30±0.1
1
0.30~0.40
1.30 BSC
2
2.0±0.1
0.11±0.05
0.70-0.15
3
0~0.1
+0.1
KST-3037-001 2
BC846UF
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base vo ltage VCBO 80 V
Collector-Emitter vo ltage VCEO 55 V
Emitter-Base voltage VEBO 5 V
Collector current IC 100 mA
Collector dissipation PC 200 mW
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter breakd own voltage BVCEO I
C=1mA, IB=0 55 - - V
Base- Emitter tur n on voltage VBE(ON) V
CE=5V, IC=2mA 550 - 700 mV
Base- Emitter satura tion volta g e VBE(sat) I
C=100mA, IB=5mA - 900 - mV
Collector- Emitter saturation v olta ge VCE(sat) I
C=100mA, IB=5mA - - 600 mV
Collector cut-off current ICBO V
CB=35V, IE=0 - - 15 nA
DC current gain hFE* VCE=5V, IC=2mA 110 - 800 -
Transition frequency fT V
CE=5V, IC=10mA - 150 - MHz
Collector output capacitance Cob V
CB=10V, IE=0, f= 1MHz - - 4.5 pF
Noise figure NF VCE=5V, IC=200µA,
f=1KHz, Rg=2KΩ - - 10 dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-3037-001 3
BC846UF
Electrical Characteristic Curves
Fig. 4 hFE -IC
Fig. 1 PC –Ta Fig. 2 IC -VBE
Fig. 3 IC -VCE
Fig. 5 VCE(sat) -IC
