Rev.3.00 May 15, 2006 page 1 of 6
2SK1404
Silicon N Channel MOS FET REJ03G0944-0300
Rev.3.00
May 15, 2006
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary br eakdown
• Suitable for sw i t c hi ng regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
1. Gate
2. Drain
3. Source
123
D
G
S
2SK1404
Rev.3.00 May 15, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID 5 A
Drain peak current ID(pulse)*1 20 A
Body to drain diode reverse drain current IDR 5 A
Channel dissipation Pch*2 35 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 1.1 1.5 Ω I
D = 2.5 A, VGS = 10 V *3
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 2.5 A, VDS = 10 V *3
Input capacitance Ciss — 1000 — pF
Output capacitance Coss — 250 — pF
Reverse transfer capacitance Crss — 45 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 12 — ns
Rise time tr — 45 — ns
Turn-off delay time td(off) — 105 — ns
Fall time tf — 55 — ns
ID = 2.5 A, VGS = 10 V,
RL = 12 Ω
Body to drain diode forward v oltage VDF — 0.9 — V IF = 5 A, VGS = 0
Body to drain diode reverse recover y
time trr — 500 — ns
IF = 5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1404
Rev.3.00 May 15, 2006 page 3 of 6
Main Characteristics
60
40
20
0
0 50 100 150
Case Temperature Tc (°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
50
10
1
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
20
2
5
0.2
0.5
1
0.1
3 10 30 100 300 1000
0.05
10
20 50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
8
2
10 30 40
00
4
6
Drain Current ID (A)
10
410
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
8
2
268
0
0
4
6
10
820
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS (on) (V)
8
2
41216
0
0
4
6
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
20
2
1
5
10
Static Drain to Source on State Resistance
vs. Drain Current
0.5
100.2 0.5 1 2 5 20
4.5 V
3.5 V
25°C
Operation in
this area is
limited by RDS (on)
Pulse Test VDS = 20 V
Pulse Test
Ta = 25°C
2 A
1 A
ID = 5 A
15 V
VGS = 10 V
Pulse Test Pulse Test
10 µs
1 ms
PW = 10 ms (1 Shot)
DC Operation (Tc = 25°C)
100 µs
4 V
–25°C
10 V
Tc = 75°C
6 V
VGS = 3 V
5 V
2SK1404
Rev.3.00 May 15, 2006 page 4 of 6
5
40 160
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
4
1
0 80 120
0
2
3
Static Drain to Source on State Resistance
vs. Temperature
–40
10
0.1 2
Drain Current I
D
(A)
2
0.2
0.2 1
1
0.5
0.05 0.5
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance vs.
Drain Current
5
5
0.1
1000
0.1 2
Reverse Drain Current I
DR
(A)
500
20
0.2 10.05
100
200
10
0.5
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
50
5
1000
20 50
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
100
10000
10
1000
16 40
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
800
200
82432
400
600
20
16
4
0
8
12
Gate to Source Voltage V
GS
(V)
00
Gate Charge Qg (nc)
500
Drain Current I
D
(A)
Switching Time t (ns)
200
5
50
100
10
Switching Characteristics
0.2 0.50.1 1
20
2105
I
D
= 5 A
2 A
1 A
V
GS
= 10 V
75°C
Pulse Test
V
DS
= 20 V
Pulse Test
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
Pulse Test
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
V
GS
V
DS
I
D
= 5 A
tf
tr
td(off)
td(on)
V
DD
= 100 V
250 V
400 V
V
DD
= 400 V
250 V
100 V
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
Tc = –25°C
25°C
2SK1404
Rev.3.00 May 15, 2006 page 5 of 6
10
0.8 2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
8
0.4 1.2 1.6
4
6
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
2
0, –5 V
VGS = 5 V, 10 V
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γS (t)
1.0
0.1
0.3
10 µ
0.03
0.01 100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
TPW
PDM
D = T
PW
θch–c (t) = γS (t) • θch–c
θch–c = 3.57°C/W, TC = 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V 50 Ω
D.U.T.
Vout Monitor
RL
VDD
30 V
=
..
Waveforms
Vin
td (on)
10%
tr
90%
Vout 10%
90% 90%
tf
td (off)
10%
2SK1404
Rev.3.00 May 15, 2006 page 6 of 6
Package Dimensions
10.0 ± 0.3
7.0 ± 0.3 3.2 ± 0.2
12.0 ± 0.3
0.6
2.8 ± 0.2
2.5 ± 0.2
17.0 ± 0.3
14.0 ± 1.0
0.5 ± 0.1
2.5
4.45 ± 0.3
5.0 ± 0.3
2.0 ± 0.3
0.7 ± 0.1
2.54 ± 0.52.54 ± 0.5
1.2 ± 0.2
1.4 ± 0.2
φ
Unit: mm
Previous Code
PRSS0003AD-A
TO-220FM / TO-220FMV
MASS[Typ.]
1.8gSC-67
RENESAS CodeJEITA Package Code
Package Name
TO-220FM
Ordering Information
Part Name Quantity Shipping Container
2SK1404-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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