2SK1342 Silicon N Channel MOS FET REJ03G0939-0200 (Previous: ADE-208-1279) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1342 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Ratings 900 Unit V VGSS ID 30 8 V A 20 8 A A ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 100 150 W Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Tstg -55 to +150 C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 900 Typ -- Max -- Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS 30 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) -- 2.0 -- -- 250 3.0 A V VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) -- 1.2 1.6 ID = 4 A, VGS = 10 V * |yfs| 3.5 5.5 -- S ID = 4 A, VDS = 20 V * Input capacitance Output capacitance Ciss Coss -- -- 1730 700 -- -- pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) -- -- 310 25 -- -- pF ns tr 135 185 -- -- ns ns Rise time Turn-off delay time td(off) -- -- Fall time Body to drain diode forward voltage tf VDF -- -- 130 0.9 -- -- ns V trr -- 900 -- ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 4 A, VGS = 10 V, RL = 7.5 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/s 2SK1342 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 50 100 50 ea ar ) is th S (on in R D n tio d by a er ite Op lim is 10 5 2 0.5 0.2 50 100 100 30 300 1,000 Typical Output Characteristics Typical Transfer Characteristics 10 6V Drain Current ID (A) Pulse Test 8 5V 6 4 4.5 V 2 VGS = 4 V 10 20 30 40 50 VDS = 20 V Pulse Test 8 6 4 2 75C TC = 25C 0 2 -25C 6 4 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 ID = 10 A 12 8 5A 4 2A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) () Drain Current ID (A) Drain to Source Saturation Voltage VDS (on) (V) m s Drain to Source Voltage VDS (V) 10 V 0 s Case Temperature TC (C) 10 0 10 3 1 150 1 s Ta = 25C 0.05 0 0 1 0.1 10 10 ) ) ot C Sh 5 (1 = 2 s m (T C n 10 = atio r P W pe O C Drain Current ID (A) 20 D Channel Dissipation Pch (W) 150 5 VGS = 10 V 2 1 15 V 0.5 0.2 0.1 0.05 0.2 Pulse Test 0.5 1.0 2 5 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK1342 5 4 VGS = 10 V Pulse Test 5A 3 ID = 10 A 2 2A 1 0 -40 0 40 80 120 160 75C 2 1 0.5 0.2 0.1 0.05 5 2 Ciss 1,000 Coss Crss 100 VGS = 0 f = 1 MHz 100 10 0.2 0.5 2 1 5 0 10 20 10 30 50 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 1,000 500 VDD = 600 V 800 16 400 V 250 V VGS VDS 12 8 400 ID = 8 A 600 V 400 V VDD = 250 V 200 4 0 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 100 Switching Time t (ns) 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 1 10,000 di/dt = 100 A/s, Ta = 25C, VGS = 0 Pulse Test 200 0 0.5 0.2 Typical Capacitance vs. Drain to Source Voltage 500 600 0.1 Body to Drain Diode Reverse Recovery Time 1,000 50 0.1 -25C TC = 25C Drain Current ID (A) Capacitance C (pF) Reverse Recovery Time t rr (ns) VDS = 20 V Pulse Test 5 Case Temperature TC (C) 5,000 2,000 10 td (off) 200 tf 100 tr 50 td (on) 20 10 5 0.1 VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 % 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1342 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, -5 V 0 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C 0.1 0.1 0.05 PDM 0.02 0.03 1 0.0 Pulse hot 1S 0.01 10 T 100 1m 10 m D = PW T PW 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Vin 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 V . DD =. 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf 2SK1342 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 0.2 1.5 0.3 19.9 0.2 2.0 14.9 0.2 0.5 1.0 3.2 0.2 Unit: mm 5.0 0.3 15.6 0.3 1.6 2.0 1.4 Max 18.0 0.5 2.8 1.0 0.2 3.6 0.6 0.2 0.9 1.0 5.45 0.5 5.45 0.5 Ordering Information Part Name 2SK1342-E Quantity 360 pcs Shipping Container Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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