SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
Page 1 of 3
2N5320
• Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A)
• Hermetic TO-39 Metal package.
• Ideally Suited For Medium Power Amplifier And
Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 100V
VCEO Collector – Emitter Voltage 75V
VEBO Emitter – Base Voltage 7V
IC Continuous Collector Current 2A
IB Base Current 1.0A
PD Total Power Dissipation at TA = 25°C 1.0W
Derate Above 25°C 5.71mW/°C
PD Total Power Dissipation at TC = 25°C 7W
Derate Above 25°C 40mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 175 °C/W
RθJC
Thermal Resistance, Junction To Case 25 °C/W
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 75 V
VCE = 100V VBE = -1.5V 100 µA
VCE = 70V VBE = -1.5V
ICEX Collector Cut-Off Current
TA = 150°C 5 mA
IEBO Emitter Cut-Off Current VEB = 7V IC = 0 100 µA
IC = 500mA VCE = 4V 30 130
hFE
(1)
Forward-current transfer
ratio IC = 1.0A VCE = 2V 10
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 500mA IB = 50mA 0.5
VBE(on)
(1)
Base-Emitter Voltage IC = 500mA VCE = 4V 1.1
V
DYNAMIC CHARACTERISTICS
IC = 50mA VCE = 4V
| hfe | Small signal forward-current
transfer ratio f = 10MHz
5
IC = 500mA VCC = 30V
ton Turn-On Time IB1 = 50mA 80
IC = 500mA VCC = 30V
toff Turn-Off Time IB1 = - IB2 = 50mA 800
ns
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
39 (TO
-
205AD
) METAL PACKAGE
Underside View
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
0.89
(0.035)
max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
