1
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Power
Source
Pin 3,4
Driver
Source
Pin 2
MOSFET
600VCoolMOSªCFD7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe
successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge
(ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class
reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.TheCoolMOS™CFD7technologymeetshighestefficiencyand
reliabilitystandardsandfurthermoresupportshighpowerdensity
solutions.Altogether,CoolMOS™CFD7makesresonantswitching
topologiesmoreefficient,morereliable,lighterandcooler.
Features
•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Qrr)
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•Best-in-classRDS(on)inSMDandTHDpackages
Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions
Potentialapplications
SuiteableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging
ProductValidation:FullyqualifiedaccordingtoJEDECforIndustrial
Applications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 160 mΩ
Qg,typ 31 nC
ID,pulse 58 A
Eoss @ 400V 3.6 µJ
Body diode diF/dt 1300 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPL60R160CFD7 PG-VSON-4 60R160F7 see Appendix A
2
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
16
10.0 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 58 A TC=25°C
Avalanche energy, single pulse EAS - - 68 mJ ID=4.1A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.34 mJ ID=4.1A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 4.1 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 95 W TC=25°C
Storage temperature Tstg -40 - 150 °C -
Operating junction temperature Tj-40 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current IS- - 16 A TC=25°C
Diode pulse current2) IS,pulse - - 58 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=16A,Tj=25°C
see table 8
Maximum diode commutation speed diF/dt - - 1300 A/µsVDS=0...400V,ISD<=16A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj max.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
4
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.32 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
soldering allowed Tsold - - 260 °C reflow MSL2A
5
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.34mA
Zero gate voltage drain current1) IDSS -
-
-
7
1
37 µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.130
0.295
0.16
-ΩVGS=10V,ID=6.8A,Tj=25°C
VGS=10V,ID=6.8A,Tj=150°C
Gate resistance RG- 10 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1330 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 24 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related2) Co(er) - 44 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related3) Co(tr) - 453 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=10V,ID=7.3A,
RG=5.3Ω;seetable9
Rise time tr- 12.5 - ns VDD=400V,VGS=10V,ID=7.3A,
RG=5.3Ω;seetable9
Turn-off delay time td(off) - 84 - ns VDD=400V,VGS=10V,ID=7.3A,
RG=5.3Ω;seetable9
Fall time tf- 5 - ns VDD=400V,VGS=10V,ID=7.3A,
RG=5.3Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 8 - nC VDD=400V,ID=7.3A,VGS=0to10V
Gate to drain charge Qgd - 10 - nC VDD=400V,ID=7.3A,VGS=0to10V
Gate charge total Qg- 31 - nC VDD=400V,ID=7.3A,VGS=0to10V
Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=7.3A,VGS=0to10V
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
6
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 1.0 - V VGS=0V,IF=6.8A,Tj=25°C
Reverse recovery time trr - 103 153 ns VR=400V,IF=7.3A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 0.45 0.9 µC VR=400V,IF=7.3A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 7.8 - A VR=400V,IF=7.3A,diF/dt=100A/µs;
see table 8
7
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
20
40
60
80
100
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
0.5
0.1
0.2
0.05
0.01
0.02
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
20
40
60
80
100
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
60
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30 40 50
0.200
0.250
0.300
0.350
0.400
0.450
6.5 V
20 V
7 V
10 V
6 V
5.5 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[normalized]
-50 -25 0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
RDS(on)=f(Tj);ID=6.8A;VGS=10V
9
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
20
40
60
80
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25 30 35
0
1
2
3
4
5
6
7
8
9
10
120 V 400 V
VGS=f(Qgate);ID=7.3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
20
40
60
80
EAS=f(Tj);ID=4.1A;VDD=50V
10
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-50 -25 0 25 50 75 100 125 150
540
570
600
630
660
690
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
10-1
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
1
2
3
4
5
Eoss=f(VDS)
11
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
12
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
6PackageOutlines
Figure1OutlinePG-VSON-4,dimensionsinmm/inches
13
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSCFD7Webpage:www.infineon.com
•IFXCoolMOSCFD7applicationnote:www.infineon.com
•IFXCoolMOSCFD7simulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
14
600VCoolMOSªCFD7PowerTransistor
IPL60R160CFD7
Rev.2.1,2018-11-05Final Data Sheet
RevisionHistory
IPL60R160CFD7
Revision:2018-11-05,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2018-04-20 Release of final version
2.1 2018-11-05 Table 7: Reduced trr,max value; Change of qualification grade nomenclature
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
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informationgiveninthisdocumentwithrespecttosuchapplication.
Information
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.