© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C40 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ40 V
VGSM Transient ± 20 V
ID25 TC= 25°C 220 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 660 A
IAR TC= 25°C 110 A
EAS TC= 25°C 600 mJ
PDTC= 25°C 360 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque ( TO-220 ) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 40 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 50 μA
RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 2.8 3.5 mΩ
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA220N04T2
IXTP220N04T2
VDSS = 40V
ID25 = 220A
RDS(on) ≤≤
≤≤
≤ 3.5mΩΩ
ΩΩ
Ω
DS99918B(04/08)
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
z175°C Operating Temperature
Advantages
zEasy to mount
zSpace savings
zHigh power density
Preliminary Technical Information
G = Gate D = Drain
S = Source TAB = Drain
TO-263 (IXTA)
TO-220 (IXTP)
(TAB)
D
G
S
GS
(TAB)
Applications
•Synchronous Buck Converters
•High Current Switching Power
Supplies
•Battery Powered Electric Motors
•Resonant-mode power supplies
•Electronics Ballast Application
•Class D Audio Amplifiers
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N04T2
IXTP220N04T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 40 66 S
Ciss 6820 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1185 pF
Crss 250 pF
td(on) 15 ns
tr 21 ns
td(off) 31 ns
tf 21 ns
Qg(on) 112 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 nC
Qgd 30 nC
RthJC 0.42 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 220 A
ISM Repetitive, Pulse width limited by TJM 660 A
VSD IF = 50A, VGS = 0V, Note 1 1.0 V
trr 45 ns
IRM 1.4 A
QRM 32 nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 20V, ID = 50A
RG = 3.3Ω (External)
IF = 110A, VGS = 0V
-di/dt = 100A/μs
VR = 20V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXTA220N04T2
IXTP220N04T2
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V 8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
220
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
6V
5V
7V
Fig. 4. RDS(on) Normalized to ID = 110A Valu e
vs. Jun ctio n Temp er at u r e
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 220A
Fig. 5. RDS(on) Normalized to ID = 110A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - -
-
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case T emperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N04T2
IXTP220N04T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
2.5 3 3.5 4 4.5 5 5.5 6 6.5
V
GS
- Volts
I
D
- Amperes
T
J
=150ºC
25ºC
- 40ºC
Fi g . 8. Tran sco nd u ctan ce
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
30
60
90
120
150
180
210
240
270
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 20V
I
D
= 110A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Fo r war d-B i as Sa fe Op er atin g Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
100ms
R
DS(on)
Limit
DC
© 2008 IXYS CORPORATION, All rights reserved
IXTA220N04T2
IXTP220N04T2
Fig . 14. R esistive Turn -o n
Ri se Time vs. D r ai n C u r r en t
18
19
20
21
22
23
24
25
26
27
28
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 20V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 15. R esisti ve Tur n -o n
Switch i n g Times vs. Gate R esi stan ce
0
10
20
30
40
50
60
70
80
90
100
110
120
130
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
5
10
15
20
25
30
35
40
45
50
55
60
65
70
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 220A, 110A
Fi g . 16. R esi stive Tur n -o ff
Switch i n g Times vs. Ju n ctio n Temper atu r e
12
14
16
18
20
22
24
26
28
30
32
34
36
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
18
20
22
24
26
28
30
32
34
36
38
40
42
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 20V
I
D
= 110A
I
D
= 220A
Fi g . 17. R esisti ve Tur n -o ff
Switching Times vs. Drain Current
14
18
22
26
30
34
38
42
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
22
26
30
34
38
42
46
50
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 20V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. R esi st i ve Turn -o n
Rise T ime vs. Junction Temperature
16
17
18
19
20
21
22
23
24
25
26
27
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 20V
I
D
= 110A
I
D
= 220A
Fi g . 18. R esisti ve Tur n -o f f
Switchi n g Times vs. Gate Resi stance
0
20
40
60
80
100
120
140
160
180
200
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
0
20
40
60
80
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 220A
I
D
= 110A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N04T2
IXTP220N04T2
IXYS REF: T_220N04T2(V5) 04-24-08-C
Fi g . 19. Maxi mum Tran si en t Ther mal I mp ed an ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
