TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
18
20
22
24
26
28
30
32 34 36 38 40 42 44 46 48
Fre que ncy (GHz)
Output Power (dBm)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
32 34 36 38 40 42 44 46 48
Fr equency ( GHz)
S-param eter (dB)
33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU
Key Features
• Frequency Range: 33 - 47 GHz
• 27 dBm Nominal Psat @ 38GHz
• 26 dBm P1dB @ 38 GHz
• 32 dBm OTOI @ 16dBm/Ton e
• 14 dB No minal Gain @ 38GHz
• 14 dB No minal Return Loss @ 38GHz
• Bias: 6 V @ 400 mA I dq
• 0.25 um 3MI pHEMT Technolog y
• Chip Dimensions 2.00 x 1.45 x 0.10 mm
(0.079 x 0.057 x 0.004 in)
Primary Applications
• Digital Radio
• Point-to-Point Radio
• Point-to-Multipoint Communicati ons
• Military SAT-COM
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
Product Description
The TriQuint TGA4522-EPU is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint’s
proven standard 0.25um power pHEMT production
process.
The TGA4522-EPU nominally provides 27 dBm
saturated output power, and 26 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 14 dB, and return loss of 12 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4522-EPU is 100% DC and RF tested on-
wafer to ensure performance compliance.
Gain
IRL
ORL
Psat
P1dB
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd Dra in Voltage 8 V 2/
Vg Gate Voltage Range -2 TO 0 V
Id Drain Current 700 mA 2/ 3/
IgGate Current 16 mA 3/
PIN Input Continuous Wave Power 23 dBm
PDPower Dissipation See note 4/ 2/
TCH Operating Channel Temperature 150 0C 5/ 6/
TMMounting Temperature (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD
.
3/ Total current for the entire MMIC.
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 0C – TBASE 0C) / 35.5 (0C/W)
Where TBASE is the base plate temperature.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
TGA4522-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
TABLE II
ELECTRICAL CHA RACTERIST ICS
(Ta = 25 0C Nominal)
TGA4522-EPU
PARAMETER TYPICAL UNITS
Frequency R ange 33 - 47 GH z
Drain Voltage, Vd 6.0 V
Drain Current, Id 400 mA
Gate Voltage, Vg -0.5 V
Small Signal Gain, S21 13 dB
Input Return Loss, S11 14 dB
Output R eturn Loss, S22 18 dB
Output Pow er @ 1dB Gain Compression, P1dB 26 dBm
Saturated Pow er, Psat 27 dBm
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS TCH
(OC) R
T
JC
(qC/W) TM
(HRS)
RθJC Thermal Re sistance
(channel to Case)
Vd = 5 V
Id = 400 mA
Pdiss = 2. 0 W 140 35.5 2.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 50 oC baseplate temperature. Worst case condition with no RF applied, 100%
of DC p ower is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
-30
-25
-20
-15
-10
-5
0
5
10
15
20
30 32 34 36 38 40 42 44 46 48 50
Frequency (GH z)
Return L o ss (d B)
0
2
4
6
8
10
12
14
16
18
20
30 32 34 36 38 40 42 44 46 48 50
Frequency (GHz)
Gain (dB)
TGA4522-EPU
Prelimi nary Measured Data
Bias Conditions: Vd = 5-6 V, Idq = 400 mA
IRL
ORL
6V
5V
Bias Conditions: Vd = 6 V, Idq = 400 mA
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
TGA4522-EPU
Prelimi nary Measured Data
Bias Conditions: Vd = 4 - 6 V, Idq = 400 mA
18
19
20
21
22
23
24
25
26
27
28
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Frequenc y (GHz)
P1d B (dBm )
Vd=6V
Vd=5V
Vd=4V
18
19
20
21
22
23
24
25
26
27
28
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Fr e quenc y (GHz)
Psat (dBm )
Vd=6V
Vd=5V
Vd=4V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
TGA4522-EPU
Prelimi nary Measured Data
6
8
10
12
14
16
18
20
22
24
26
28
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Pin (dBm)
Pout (dBm ) & Gain (dB)
0
50
100
150
200
250
300
350
400
450
500
550
Id (m A
)
Power
Gain
Id
Bias Conditions: Vd = 6 V, Idq = 400 mA, Freq = 38 GHz
6
8
10
12
14
16
18
20
22
24
26
28
-8-6-4-2024681012141618
Pin (dBm )
Pout (dBm ) & G ain (dB)
0
50
100
150
200
250
300
350
400
450
500
550
Id (m A)
Power
Gain
Id
Bias Conditions: Vd = 5 V, Idq = 400 mA, Freq = 38 GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
26
27
28
29
30
31
32
33
34
35
36
35 35.5 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41
Fr equency ( GHz)
O T O I ( dBm) & I M D3 (d Bc)
IMD3@ 18dBm/tome
O TOI @ 18dBm/tone
TGA4522-EPU
Prelimi nary Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA, f=10MHz
18
20
22
24
26
28
30
32
34
36
38
40
42
44
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 2
2
Output Power / Tone (dBm )
IMD3 (dBc)
37GHz
38GHz
39GHz
40GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
Mechanical Drawing
TGA4522-EPU
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND is back side of MMIC
Bond pa d #1
Bond pa d #2
Bond pad #3, 13
Bond pad #4, 5, 7, 9, 11, 12
Bond pad #6, 10
(RF In)
(N/C)
(Vg)
(Vd)
(N/C)
0.100 x 0.150
0.100 x 0.108
0.108 x 0.108
0.108 x 0.108
0.091 x 0.084
Bond pa d #8 (RF Out) 0.100 x 0.150
(0.00 4 x 0.006)
(0.00 4 x 0.004)
(0.00 4 x 0.004)
(0.00 4 x 0.004)
(0.00 4 x 0.003)
(0.00 4 x 0.006)
1
234567
8
9
10
11
12
13
0
0
0.391
(0.015) 0.530
(0.021) 1.352
(0.053) 1.500
(0.059) 1.670
(0.066) 1.893
(0.075) 2.000
(0.079)
1.351
(0.053)
0.261
(0.010)
0.108
(0.004)
1.450
(0.057)
0.398
(0.016)
0.129
(0.005)
0.099
(0.004)
1.670
(0.066)
1.500
(0.059)
1.352
(0.053)
0.530
(0.021)
0.391
(0.015)
1.071
(0.042)
1.351
(0.053)
RCRC B B
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
Recommended Chip Assembly Diagram
TGA4522-EPU
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TFN (10mil Alumina)
TFN (10mil Alumina)
100pF
100pF
Vg
100pF
100pF
Vg 100pF 100pF
15
1.0 F
0.01 F
Vd
15
1.0 F
0.01 F
15
1.0 F
0.01 FVd
15
1.0 F
0.01 F
Bias Co nditions: Vd = 5 - 6 V
Vg = ~ -0.5 V to get 400mA Id
Wedge bonds or ribbons
To reduce these components (0.01 F, 15 , 1.0 F) connect:
Vg @ bottom to Vg @ top
Vd @ bottom to Vd @ top
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 -8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specificatio ns.
Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4522-EPU
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No flu xes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atm osphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect proce ss assemb ly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum sta ge temperature is 2000C.
