84) D MM 8235605 0014656 4 MBSIEG 68D 14696 9 T 39+// BUZ 60 B SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel! Draln-source voltage yg = 400V Continuous drain current 7m =45A Drain-source on-resistance Apson = 1,5Q G Ss Description SIPMOS, N-channel, enhancement mode Case Plastic package 14A3 In accordance with DIN 41869, or TO 220 AB in accordance with JEDEC. The drain terminal is conductively connected to the mounting flange. Approx. weight 2 g Type | Ordering code S EIBUZ60B | C67078-A1312-A4 ef v +4- wn Vic Rd t 54 20) 95:02 99 Ne 2.54 =f Dimensions In mm Maximum ratings Description Symbois | Ratings Units Conditions Drain-source voltage Vos 400 Vv Drain-gate voltage Voar 400 Vv Res = 20 kQ Continuous drain current h 45 A Tg = 35C Pulsed drain current Toputs 18 A To = 25C Gate-source voltage Ves 20 Vv Max. power dissipation Py 75 WwW To = 25C Operating and storage i temperature range Tatg 55...+150 | C DIN humidity category E - DIN 40040 IEC climatic category 55/150/56 DIN IEC 68-1 Thermal resistance Chip case Anas =1,67 K/W Chip - ambient | Rana | s75 K/W | 406 Ef Preterred Type 0988 A-03t ~ ~ e oee pane nnn 68D) D MM 4235605 OOL4b97 & MMSIEG. SIEMENS AKTIENGESELLSCHAF . - . Le BUZ 60 B ssp 14697. 0 7 .39-// Electrical characteristics (at 7, = 25C unless otherwise specified) Description Symbo! | Characteristics Unit | Conditions i min. | typ. { max. : i Static ratings : Drain-source Vianyoss | 400 | - Vv Veg = OV i breakdown voltage i, =0,25mA j Gate threshold voltage Vas thy 21 3,0 [4,0 Vos = Vag : lh =1mA Zero gate voltage Toss - 20 250 pA Ro = 25C drain current - 100 | 1000 7, = 128C Vog = 400V Ves = OV Gate-source leakage Tass - 10 100 MA | Veg = 20V current Vs = OV Drain-source Fos (on) - 1,2 1,5 Q | Veg = 10V on-resistance ; Ih = 2,5A Dynamic ratings Forward Gs 1,7 2,5 _ Ss Vg = 25V transconductance lh = 25A Input capacitance Cis = 1,6 2,0 nF Vag = OV Output capacitance Coss = 120 [180 |pF | Ms = 25V Reverse transfer Cras - 35 60 f = MHz capacitance Turn-on time fn ta ton - 30 45 ns Vog = 30V (fon = fa tom + &) t _ 40 60 Ih = 26A Turn-off time yy by cont [110 | 140 Ves = 10V (oft) Fog = 500 (tot = bacon + 4) t - 50 65 Reverse diode Continuous reverse ha - 17 |45 A Tg = 26C drain current Pulsed reverse drain Top - - 18 current Diode forward on-voltage Vep ~ 1,15 |150 |V I; = 2X Ion Vas = OV, q = 25C Reverse recovery time t, - 1000 | ns j = 25C Reverse recovery Or _ 5 - yo |- = ha charge Orit = 1O0A/ES Va = 100V 0989 A704 407= = eee net ee ee en eee eee BaD D MM 8235605 OOL4E98 8 BMSIEG 88D 14698 Dp 7-39-// BUZ 60 B Power diasipation Py = f (To) Typical output characteristics Jp = f(Vps) parameter: 80 jis pulse test, 7 = 25 80 10 15 hn A Po hh 8 60 | 50 6 40 4 50 20 2 10 4.0V 0 0 0 20 30 4 Vv 60 0 50 100 C 150 V. e OS Safe operating area [p = f(Yps) Typical transfer characteristic Jy = f(Vog) parameter: D = 0.01, Tg = 25C parameter: 80 ps pulse test, Vpg = 26V, Tj = 25C 10? A 5 Ty 10! 5 10 5 407 0 10 5 10! 5 10? 5 Vv 103 Q 5 Vv 10 * Vos __ Gs 408 0990 A-05 fm eee AVHDSTVSSAINATLAV SNAWATS ~S83) D MM 8235605 OOL4E95 T MESIEG SIEMENS AKTIENGESELLSCHAF 7 -29~// BUZ 60 B Typical draln-source on-state resistance Fos tony = F Uo, parameter: Vgg; Tj = 25C Draln-source on-state resistance Fos tony = f(T) parameter: b= 2,5A, Veg = 10V (spread) 4 R Q 5 Roston Vas=5V. 55V| ov | 65V Roston) 3 4 3 2 2 4 1 0 0 50 0 50 100 C 150 e Ij Typical transconductance G, = f( Jp) parameter: 80 ps pulse test, parameter: Vos = Y Vog = 25V, 7; = 25C bs = Mas, 10 (spread) S v Vest 4 $0 O991 A-06 Gate threshold voltage Vosin) =f ()) = Im. 100 C 150 Fj 40988D 14700 Typical capacitances &: = Hf {ivos) parameter: Vag = 0, f 10! nF 5 10 10" 102 0 10 20 30 VV 40 = Vos Forward characteristle of reverse diode te = f(Vep) parameter Ty t = 80 ps (spread) 10 A 5 Ip | 10 25C typ. 0 05 10 1520 25 V 30 ay 410 0992 A-07 Re See et BUZ 60 B BaD 1 > 23S5b05 0014700 2 MESIEG op 7 39-// _ SIEMENS AKTIENGESELLSCHAF Continuous drain current fp = f(T%) parameter: Vag = 50 100 C 150iil So 88) D MM 8235605 OOL4701 4 MESIEG ~~ SIEMENS AKTIENGESELLSCHAF 7 349-11 BUZ 60 B Transient thermal impedance Z, = f(t) parameter: D = tf F we K W 2 nae 10 5 10" 5 we ~ 10 10 5 103 5 102 5 0t 10 5 10! _-} Typical gate-charga Vag = f (Qgate) parameter: Jp puis = 8,34 15 Yes v 10 5 0 0 10 20 30 40 nc 50 ate 4i1 0993 A-08