J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: 111 < 30 W Fast Switching--tON: 4 ns Low Leakage: 5 pA Low Capacitance: 3 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode. For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 S 2 TO-236 (SOT-23) D 1 3 G S G 2 3 Top View Top View J111 J112 J113 SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa (TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW (TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW Notes a. Derate 2.8 mW/_C above 25_C For applications information see AN105. Document Number: 70232 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 J/SST111 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST111 Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -55 -35 VGS(off) VDS = 5 V, ID = 1 mA -3 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 20 Gate Reverse Current IGSS Parameter Max J/SST112 Min Max J/SST113 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain Cutoff Current -35 V VGS = -15 V, VDS = 0 V Gate Operating Current -35 IG ID(off) -0.005 VDG = 15 V, ID = 10 mA -5 VDS = 5 V, VGS = -10 V 0.005 TA = 125_C rDS(on) VGS = 0 V, VDS = 0.1 V Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V -1 -5 5 -1 -3 2 -1 mA -1 nA -3 TA = 125_C Drain-Source On-Resistance -10 pA 1 1 1 nA 3 30 50 100 W 0.7 V 6 mS 25 mS Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V, ID = 1 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = -10 V f = 1 MHz VDG = 10 V, ID = 1 mA f = 1 kHz 30 50 100 7 12 12 12 3 5 5 5 W pF 3 nV Hz Switching td(on) Turn-On Time Turn-Off Time tr td(off) 2 VDD = 10 V, VGS(H) = 0 V See Switching Circuit tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 7-2 2 ns 6 15 NCB Document Number: 70232 S-04028--Rev. E, 04-Jun-01 J/SST111 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 80 160 IDSS rDS 60 120 40 80 20 40 0 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 -4 -6 -8 TA = 25 C 80 VGS(off) = -2 V 60 40 -4 V -8 V 20 0 0 -2 0 On-Resistance vs. Drain Current 100 200 IDSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 -10 1 10 VGS(off) - Gate-Source Cutoff Voltage (V) ID - Drain Current (mA) Turn-On Switching On-Resistance vs. Temperature 5 tr approximately independent of ID VDD = 5 V, RG = 50 VGS(L) = -10 V ID = 1 mA rDS changes X 0.7%/_C 160 4 tr 120 Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) 200 VGS(off) = -2 V 80 -4 V -8 V 40 3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA 1 0 0 -55 -35 5 -15 25 45 65 85 105 0 125 TA - Temperature ( _C) -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) Capacitance vs. Gate-Source Voltage Turn-Off Switching 30 30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V f = 1 MHz 24 18 Capacitance (pF) 24 Switching Time (ns) 100 tf @ VGS(off) = -2 V 12 18 12 td(off) Ciss @ VDS = 0 V 6 6 tf @ VGS(off) = -8 V Crss @ VDS = 0 V 0 0 0 2 4 6 ID - Drain Current (mA) Document Number: 70232 S-04028--Rev. E, 04-Jun-01 8 10 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) www.vishay.com 7-3 J/SST111 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage Noise Voltage vs. Frequency 100 50 gfs - Forward Transconductance (mS) Hz en - Noise Voltage nV / ID = 1 mA ID = 10 mA 1 40 gfs 30 250 20 10 0 10 100 1k 10 k 0 0 100 k f - Frequency (Hz) 1 mA -10 gig 10 mA big (mS) 1 mA IGSS @ 25_C 1 TA = 25_C I G -8 10 100 pA 10 pA -6 VDG = 10 V ID = 10 mA TA = 25_C ID = 10 mA TA = 125_C -4 Common-Gate Input Admittance 100 IGSS @ 125_C 1 nA -2 VGS(off) - Gate-Source Cutoff Voltage (V) Gate Leakage Current 10 nA - Gate Leakage gos 1 pA 0.1 pA 0.1 0 6 12 18 30 24 100 200 500 1000 f - Frequency (MHz) VDG - Drain-Gate Voltage (V) Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 VDG = 10 V ID = 10 mA TA = 25_C VDG = 10 V ID = 10 mA TA = 25_C -gfg bfg -brg 1.0 10 (mS) (mS) gfg +grg -grg 0.1 1 0.01 0.1 100 200 500 f - Frequency (MHz) www.vishay.com 7-4 1000 100 200 500 1000 f - Frequency (MHz) Document Number: 70232 S-04028--Rev. E, 04-Jun-01 g os - Output Conductance (mS) 10 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz VDS = 10 V J/SST111 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Gate Output Admittance Output Characteristics 100 100 VDG = 10 V ID = 10 mA TA = 25_C VGS(off) = -4 V 80 ID - Drain Current (mA) bog (mS) 10 gog 1 VGS = 0 V 60 -0.5 40 -1.0 -1.5 20 -2.0 -2.5 0.1 0 100 200 500 1000 0 2 4 10 8 VDS - Drain-Source Voltage (V) f - Frequency (MHz) Output Characteristics Transfer Characteristics 40 100 VGS(off) = -4 V VGS(off) = -4 V VDS = 20 V 80 VGS = 0 V -0.5 24 -1.0 16 -1.5 -2.0 8 ID - Drain Current (mA) 32 ID - Drain Current (mA) 6 TA = -55_C 60 25_C 40 20 -2.5 125_C -3.0 0 0 0 0.2 0.4 0.6 1.0 0.8 0 -1 VDS - Drain-Source Voltage (V) -2 -3 VGS - Gate-Source Voltage (V) VDD SWITCHING TIME TEST CIRCUIT J/SST111 J/SST112 J/SST113 VGS(L) -12 V -7 V -5 V RL* 800 W 1600 W 3200 W ID(on) 12 mA 6 mA 3 mA *Non-inductive INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70232 S-04028--Rev. E, 04-Jun-01 -5 -4 RL OUT VGS(H) VGS(L) SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF 1 kW 51 W VGS Scope 51 W www.vishay.com 7-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1