To learn more about ON Semiconductor, please visit our website at
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Motion-SPM
May 2016
TM
FSB50825AB
Smart Power Module (SPM®)
Features
•250V R
DS(on)=0.45Ω( max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• HVIC temperature sensing
• Embedded bootstrap diode in the package
• RoHS compliant
Applications
• Three-phase inverter driver for small power ac motor drives
General Description
FSB50825AB is a tiny smart power module (SPM®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50825AB
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50825AB is the best
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
2www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Absolute Maximum Ratings
Symbol Parameter Conditions Rating Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET 250 V
*ID25 Each FRFET Drain Current, Continuous TC = 25°C 3.6 A
*ID80 Each FRFET Drain Current, Continuous TC = 80°C 2.7 A
*IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100μs 9 A
*IDRMS Each FRFET Drain Current, Rms TC = 80°C, FPWM < 20KHz 1.9 Arms
*PDMaximum Power Dissipation TC = 25°C, For Each FRFET 14.2 W
Inverter Part (Each FRFET Unless Otherwise Specified)
Control Part (Each HVIC Unless Otherwise Specified)
Symbol Parameter Conditions Rating Units
VCC Control Supply Voltage Applied between VCC and COM 20 V
VBS High-side Bias Voltage Applied between VB and VS20 V
VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V
Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified)
Symbol Parameter Conditions Rating Units
VRRMB Maixmum Repetitive Reverse Voltage 250 V
* IFB Forward Current TC = 25°C 0.5 A
* IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A
Thermal Resistance
Symbol Parameter Conditions Rating Units
RθJC Junction to Case Thermal Resistance Each FRFET under inverter operat-
ing condition (Note 1) 8.8 °C/W
Total System
Symbol Parameter Conditions Rating Units
TJOperating Junction Temperature -40 ~ 150 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink 1500 Vrms
Note:
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
3www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Pin descriptions
Pin Number Pin Name Pin Description
1COM IC Common Supply Ground
2 VB(U) Bias Voltage for U Phase High Side FRFET Driving
3 VCC(U) Bias Voltage for U Phase IC and Low Side FRFET Driving
4IN(UH) Signal Input for U Phase High-side
5IN(UL) Signal Input for U Phase Low-side
6 N.C N.C
7 VB(V) Bias Voltage for V Phase High Side FRFET Driving
8 VCC(V) Bias Voltage for V Phase IC and Low Side FRFET Driving
9IN(VH) Signal Input for V Phase High-side
10 IN(VL) Signal Input for V Phase Low-side
11 N.C N.C
12 VB(W) Bias Voltage for W Phase High Side FRFET Driving
13 VCC(W) Bias Voltage for W Phase IC and Low Side FRFET Driving
14 IN(WH) Signal Input for W Phase High-side
15 IN(WL) Signal Input for W Phase Low-side
16 Vts Output for HVIC temperature sensing
17 PPositive DC–Link Input
18 U, VS(U) Output for U Phase & Bias Voltage Ground for High Side FRFET Driving
19 NUNegative DC–Link Input for U Phase
20 NVNegative DC–Link Input for V Phase
21 V, VS(V) Output for V Phase & Bias Voltage Ground for High Side FRFET Driving
22 NWNegative DC–Link Input for W Phase
23 W, VS(W) Output for W Phase & Bias Voltage Ground for High Side FRFET Driving
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN (UH)
(5) IN (UL)
(6) N.C
(7) VB(V)
(8) VCC(V)
(9) IN (VH)
(10) IN (VL)
(11) N.C
(12) V B(W)
(13) VCC(W)
(14) IN (WH)
(15) IN (WL)
(16)
(17) P
(18) U, VS(U)
(19) N U
(20) NV
(21) V, VS(V)
(22) N W
(23) W, VS(W)
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
Vts
COM
VCC
LIN
HIN
VB
HO
VS
LO
Vts
Note:
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM®. External connections should be made as indicated in Figure 3
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
4www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)
Inverter Part
Symbol Parameter Conditions Min Typ Max Units
BVDSS
Drain-Source Breakdown
Voltage VIN= 0V, ID = 1mA (Note 1) 250 - - V
IDSS
Zero Gate Voltage
Drain Current VIN= 0V, VDS = 250V - - 1 mA
RDS(on)
Static Drain-Source
On-Resistance VCC = VBS = 15V, VIN = 5V, ID = 2A -0.33 0.45 Ω
VSD
Drain-Source Diode
Forward Voltage VCC = VBS = 15V, VIN = 0V, ID = -2A - - 1.2 V
tON
Switching Times
VPN = 150V, VCC = VBS = 15V, ID = 2A
VIN = 0V ↔ 5V, Inductive load L=3mH
High- and low-side FRFET switching
(Note 2)
-950 -ns
tOFF -520 -ns
trr -140 -ns
EON -100 -μJ
EOFF -10 -μJ
RBSOA Reverse-bias Safe Oper-
ating Area
VPN = 200V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS,
TJ = 150°C
High- and low-side FRFET switching (Note 3)
Full Square
(Each FRFET Unless Otherwise Specified)
Control Part (Each HVIC Unless Otherwise Specified)
Symbol Parameter Conditions Min Typ Max Units
IQCC Quiescent VCC Current VCC=15V, VIN=0V Applied between VCC and COM - - 200 μA
IQBS Quiescent VBS Current VBS=15V, VIN=0V Applied between VB(U)-U,
VB(V)-V, VB(W)-W - - 100 μA
UVCCD Low-side Undervoltage
Protection (Figure 8)
VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V
UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V
UVBSD High-side Undervoltage
Protection (Figure 9)
VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V
UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V
Vts HVIC Temperature sens-
ing voltage output VCC=15V, THVIC=25°C(Note 4) 600 790 980 mV
VIH ON Threshold Voltage Logic High Level Applied between IN and COM - - 2.9 V
VIL OFF Threshold Voltage Logic Low Level 0.8 - - V
Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified)
Symbol Parameter Conditions Min Typ Max Units
VFB Forward Voltage IF = 0.1A, TC = 25°C(Note 5) -2.5 - V
trrB Reverse Recovery Time IF = 0.1A, TC = 25°C -80 -ns
Note:
1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM®. VPN should be sufficiently less than this value considering the
effect of the stray inductance so that VDS should not exceed BVDSS in any case.
2. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 7 for the RBSOA test cir-
cuit that is same as the switching test circuit.
4. Vts is only for sensing temperature of module and cannot shutdown MOSFETs automatically.
5. Built in bootstrap diode includes around 15 Ωresistance characteristic. Please refer to Figure 2.
0123456789101112131415
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built in Bootstrap Diode VF-IF Characteristic
IF [A]
VF [V]
Tc=25°C
5www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Recommended Operating Condition
Symbol Parameter Conditions Value Units
Min. Typ. Max.
VPN Supply Voltage Applied between P and N -150 200 V
VCC Control Supply Voltage Applied between VCC and COM 12 13.5 15 V
VBS High-side Bias Voltage Applied between VB and VS12 13.5 15 V
VIN(ON) Input ON Threshold Voltage Applied between IN and COM 3.0 -VCC V
VIN(OFF) Input OFF Threshold Voltage 0-0.6 V
tdead
Blanking Time for Preventing
Arm-short VCC=VBS=12 ~ 15V, TJ ≤ 150°C 1.0 - - μs
fPWM PWM Switching Frequency TJ ≤ 150°C -15 -kHz
Package Marking & Ordering Information
Device Marking Device Package Reel Size Packing Type Quantity
FSB50825AB FSB50825AB SPM23DD-21L - - 15
Figure 2. Built in Bootstrap Diode Characteristics(typ.)
HIN LIN Output Note
0 0 Z Both FRFET Off
0 1 0 Low side FRFET On
10 V
DC High side FRFET On
1 1 Forbidden Shoot through
Open Open Z Same as (0,0)
COM
VCC
LIN
HIN
VB
HO
VS
LO
P
NR
3
Inverter
Output
C3
C
1
Micom
15V
Line
10μFOne Leg Diagram of SPM
These values depend on PWM
control algorithm
* Example of bootstrap paramters:
C
1 = C2 = 1μF ceramic capacitor
R
5
C5
VDC
C2
Vts
* Example circuit : W phase
C
4
V
6www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Note:
1. Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
2. RC coupling(R5 and C5) and C4 at each input of SPM® and Micom (indicated as dotted lines) may be used to prevent improper signal due to surge noise.
3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C1, C2
and C3 should have good high-frequencycharacteristics to absorb high-frequency ripple current.
Figure 3. Recommended CPU Interface and Bootstrap Circuit with Parameters
Note:
Attach the thermocouple on top of the heatsink-side of SPM® (between SPM® and heatsink if applied) to get the correct temperature measurement.
Figure 4. Case Temperature Measurement
20 40 60 80 100 120 140 160
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VTS [V]
THVIC [deg]
Figure 5. Temperature profile of Vts(typ.)
tON trr
Irr
100% of ID120% of ID
(a) Turn-on
tOFF
(b) Turn-off
ID
VDS
VDS
ID
VIN VIN
10% of ID
7www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Figure 6. Switching Time Definition
COM
VCC
LIN
HIN
VB
HO
VS
LO
One-leg Diagram of SPM
ID
VCC
CBS
LV
DC
+
VDS
-
Vts
Figure 7. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)
Figure 8. Undervoltage Protection (Low-side)
Figure 9. Undervoltage Protection (High-side)
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) N.C
(7) VB(V)
(8) VCC(V)
(9) IN
(VH)
(10) IN
(VL)
(11)
(12) V
B(W)
(13) VCC(W)
(14) IN
(WH)
(15) IN
(WL)
(16)
(17) P
(18) U, V
S(U)
(19) N
U
(22) N
W
Micom
C1
15- V
Supply
C3VDC
C2
R3
R4
C6
R5
C5
For current sensing and protection
VTS
(21) V, V
S(V)
(20) N
V
(23) W, V
S(W)
C4
M
VTS
N.C
8www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Note:
1. About pin position, refer to Figure 2.
2. RC coupling(R5 and C5, R4 and C6) and C4 at each input of SPM® and Micom are useful to prevent improper input signal caused by surge noise.
3. The voltage drop across R3 affects the low side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low side
MOSFET. For this reason, the voltage drop across R3 should be less than 1V in the steady-state.
4. Ground wires and output terminals, should be thick and short in order to avoid surge voltage and malfunction of HVIC.
5. All the filter capacitors shoud be connected close to SPM®, and they should have good characteristics for rejecting high-frequency ripple current.
Figure 10. Example of Application Circuit
9www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
Detailed Package Outline Drawings
10 www.fairchildsemi.com
FSB50825AB Rev. 1.1
FSB50825AB Smart Power Module (SPM®)
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I77
®
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1
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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