IRF7413QPbF
VDSS = 30V
RDS(on) = 0.011Ω
HEXFET® Power MOSFET
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
Description
08/09/10
lAdvanced Process Technology
lUltra Low On-Resistance
lN Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
l150°C Operating Temperature
lLead-Free
These HEXFET® Power MOSFET's in SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
Reel.
SO-8
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S
y
mbol Parameter Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TA = 25°C Power Dissipation W
Linear Derating Factor mW/°C
EAS Single Pulse Avalanche Energency
d
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
TJ, TSTG Junction and Storage Temperature Range °C
S
y
mbol Parameter T
y
pMaxUnits
RθJL Junction-to-Drain Lead
h
––– 20
RθJA Junction-to-Ambient
gh
––– 50
V
Thermal Resistance Ratin
g
s
Absolute Maximum Ratin
g
s
Max
30
± 20
13
°C/W
9.2
5.0
0.02
260
-55 to +150
58
2.5
A
PD - 96112A
IRF7413QPbF
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board
Rθ is measured at TJ approximately 90°C
S
y
mbol Parameter Min T
y
pMaxUnits
V(BR)DSS Drain-to-Source Breakdown Volta
g
e 30 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Volta
g
e Temp. Coefficient ––– 0.034 ––– V/°C
––– ––– 0.011
––– ––– 0.018
VGS(th) Gate Threshold Volta
g
e1.0–––3.0V
g
fs Forward Transconductance 10 ––– ––– S
––– ––– 12
––– ––– 25
Gate-to-Source Forward Leaka
g
e––––––-100
Gate-to-Source Reverse Leaka
g
e––––––100
QgTotal Gate Char
g
e ––– 52 79
Qgs Gate-to-Source Char
g
e ––– 6.1 9.2
Qgd Gate-to-Drain ("Miller") Char
g
e ––– 16 23
RGGate Resistance 1.2 ––– 3.7
td(on) Turn-On Dela
y
Time ––– 8.6 –––
trRise Time ––– 50 –––
td(off) Turn-Off Dela
y
Time ––– 52 –––
tfFall Time ––– 46 –––
Ciss Input Capacitance ––– 1800 –––
Coss Output Capacitance ––– 680 –––
Crss Reverse Transfer Capacitance ––– 240 –––
S
y
mbol Parameter Min. T
y
p. Max. Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(
Bod
y
Diode
)
c
VSD Diode Forward Volta
g
e––––––1.0V
trr Reverse Recover
y
Time ––– 74 110 ns
Qrr Reverse Recover
y
Char
g
e ––– 200 300 nC
nC
ISM ––– ––– 58
IS
IDSS Drain-to-Source Leakage Current µA
IGSS
pF
3.1––––––
A
ƒ = 1.0MHz, See Fig. 5
RDS(on)
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
ΩVGS = 4.5V, ID = 3.7A
f
Static Drain-to-Source On-Resistance
ns
VGS = 10V, ID = 7.3A
f
MOSFET symbol
VDS = 10V, ID = 3.7A
ID = 7.3A
VDS = 24V
Conditions
RG = 2.0Ω, See Fig. 10
f
VGS = 0V
RG = 6.2 Ω
VDS = 25V
TJ = 25°C, IS = 7.3A, VGS = 0V
e
TJ = 25°C, IF = 7.3A
di/dt = 100A/µs
e
showing the
integral reverse
p-n junction diode.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratin
g
s and Characteristics
VGS = 10V, See Fig. 6 and 9
f
VDD = 15V
ID = 7.3A
VGS = -20V
VGS = 20V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
IRF7413QPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 7.3A
D
IRF7413QPbF
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1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 102030405060
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 7.3A
V = 24V
V = 15V
D
DS
DS
1
10
100
0.4 1.2 2.0 2.8 3.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7413QPbF
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0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
IRF7413QPbF
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
3.3A
6.0A
7.3A
IRF7413QPbF
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Fig 13. For N-Channel HEXFETS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Peak Diode Recovery dv/dt Test Circuit
IRF7413QPbF
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SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
NOT E S :
1. DIMENS IONING & T OLERANCING PE R AS ME Y14.5M-1994.
2. CONT ROL LING DIMENS ION: MILL IME T ER
3. DIME NS IONS ARE S HOWN IN MILLIME T E RS [INCHES ].
5 DIMENS ION DOE S NOT INCL UDE MOL D PROT RUS IONS.
6 DIMENS ION DOE S NOT INCL UDE MOL D PROT RUS IONS.
MOLD PROT RUSIONS NOT T O EXCE ED 0.25 [.010].
7 DIMENS ION IS T HE LE NGT H OF L EAD F OR S OLDE RING T O
A S UBS TRATE.
MOLD PROT RUSIONS NOT T O EXCE ED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNAT IONAL
RECTIFIER
LOGO
F7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
P = DESIGNATES LEAD-FREE
PRODUCT (OPT IONAL)
A = AS S E MB L Y S I T E CODE
Dimensions are shown in milimeters (inches)
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7413QPbF
www.irf.com 9
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2010
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
