DMG5802LFX-7 - Diodes - Datasheet.Directory

DMG5802LFX

Document number: DS35009 Rev. 3 - 2 1 of 6

www.diodes.com October 2011

DMG5802LFX

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS R

DS(ON) ID

TA = 25°C

24V 15m @ VGS = 4.5V 6.5A

20m @ VGS = 2.5V 5.6A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• ESD Protected up to 3kV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: W-DFN5020-6

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.03 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMG5802LFX-7 W-DFN5020-6 3000 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Equivalent Circuit

Top View

W-DFN5020-6

ESD PROTECTED TO 3kV

ME = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

Bottom View

S1S1G1

S2S2G2

D1/D2

Top View

Pin-Out

ME

YM

D1

S1

G1

D2

S2

G2

DMG5802LFX

Document number: DS35009 Rev. 3 - 2 2 of 6

www.diodes.com October 2011

DMG5802LFX

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 24 V

Gate-Source Voltage VGSS ±12 V

Continuous Drain Current (Note 4) VGS = 4.5V Steady

State TA = 25°C

TA = 70°C ID 6.5

5.2 A

Continuous Drain Current (Note 4) VGS = 2.5V Steady

State TA = 25°C

TA = 70°C ID 5.6

4.5 A

Pulsed Drain Current (Note 5) IDM 70 A

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4) PD 0.98 W

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RJA 126.5 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @ TA = 25°C unless otherwise stated

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 24 - - V

VGS = 0V, ID = 250A

Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0

μA VDS = 24V, VGS = 0V

Gate-Source Leakage IGSS - - ±10

μA VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

0.6 0.9 1.5 V

VDS = VGS, ID = 250A

Static Drain-Source On-Resistance RDS (ON)

- 11 15

mΩ

VGS = 4.5V, ID = 6.5A

- 12 17 VGS = 4V, ID = 5.6A

- 13 18 VGS = 3.1V, ID = 5.6A

- 14 20 VGS = 2.5V, ID = 5.6A

Forward Transfer Admittance |Yfs| - 17 - S

VDS = 5V, ID = 6.5A

Diode Forward Voltage VSD - 0.6 0.9 V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss - 1066.4 - pF VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 132.0 -

Reverse Transfer Capacitance Crss - 127.1 -

Gate Resistance R

g

- 1.47 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge VGS = 4.5V Q

g

- 14.5 -

nC

VGS = 4.5V, VDS = 15V, ID = 5.8A

Total Gate Charge VGS = 10V Q

g

- 31.3 - VGS = 10V, VDS = 15V,

ID = 5.8A

Gate-Source Charge Q

g

s - 2.0 -

Gate-Drain Charge Q

g

d - 3.1 -

Turn-On Delay Time tD

(

on

)

- 3.69 - ns

VGS = 10V, VDS = 15V,

RL = 2.1, RG = 3

Turn-On Rise Time t

r

- 13.43 - ns

Turn-Off Delay Time tD

(

off

)

- 32.18 - ns

Turn-Off Fall Time tf - 22.45 - ns

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

DMG5802LFX

Document number: DS35009 Rev. 3 - 2 3 of 6

www.diodes.com October 2011

DMG5802LFX

0

4

8

12

16

20

0 0.5 1.0 1.5 2.0

F ig . 1 Typical Output C har acteristic

V , DRAIN-SOURCE VO LTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.5V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 3.5V

GS

V = 4.0V

GS

V = 4.5V

GS

V = 10V

GS

0

4

8

12

16

20

0 0.5 1.0 1.5 2.0 2.5 3.0

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

0

0.01

0.02

0.03

0.04

0.05

048121620

Fig. 3 Typical On-Resistance

vs . Dr ai n Curr ent and G ate Voltag e

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

GS

V = 2.5V

GS

V = 1.8V

GS

0

0.01

0.02

0.03

0.04

0 5 10 15 20

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs . Dr ai n Current and Tem perat ur e

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

Fig . 5 On- R esistance Varia tion wit h Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DSON

V = 10V

I = 20A

GS

D

V = 4.5V

I = 10A

GS

D

0

0.01

0.02

0.03

0.04

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

R , DRAIN-SOURCE ON-RESIST ANCE

DSON

V = 4.5V

I = 10A

GS

D

V = 10V

I = 20A

GS

D

DMG5802LFX

Document number: DS35009 Rev. 3 - 2 4 of 6

www.diodes.com October 2011

DMG5802LFX

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Fig. 7 Gate Threshold V ariation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

V , GATE THRESHOLD VOLT AGE (V)

GS(TH)

I = 250µA

D

I = 1mA

D

0 0.2 0.4 0.6 0.8 1.0 1.2

Fi g. 8 Dio de For war d Vol t age vs . Cur r ent

V , SOURCE-DRAIN VOLT AGE (V)

SD

0

4

8

12

16

20

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

04812162024

Fig. 9 Typical Total Capacitance

V , DRA IN-SOURCE V OLTAGE (V)

DS

10

100

1,000

10,000

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

C

iss

C

rss

C

oss

04812162024

Fig. 10 Typical Leakage Current

vs. D r ai n- So ur ce Volta ge

V , DRAIN-SOURCE VOL TAGE (V)

DS

1

10

100

1,000

I , LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

10,000

100,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0 5 10 15 20 25 30 35 40

Fi g. 11 Gat e- Char ge Char ac t eri stics

Q , TOTAL GATE CHARGE (nC)

g

0

2

4

6

8

10

V,

G

A

T

E-S

O

U

R

C

E V

O

L

T

A

G

E (V)

GS

V = 15V

I = 7A

DS

D

DMG5802LFX

Document number: DS35009 Rev. 3 - 2 5 of 6

www.diodes.com October 2011

DMG5802LFX

0.001 0.01 0.1 1 10 100 1,000

Fig . 1 2 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001 0.0001

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 122°C/W

θ

JA

P(pk) t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

Package Outline Dimensions

Suggested Pad Layout

W-DFN5020-6

Dim Min Max Typ

A 0.75 0.85 0.80

A1 0 0.05 0.02

A3 − − 0.15

b 0.20 0.30 0.25

D 1.90 2.10 2.00

D2 1.40 1.60 1.50

e − − 0.50

E 4.90 5.10 5.00

E2 2.80 3.00 2.90

L 0.35 0.65 0.50

Z − − 0.375

All Dimensions in mm

Dimensions Value (in mm)

C 0.50

G 0.35

X 0.35

X1 0.90

X2 1.80

Y 0.70

Y2 1.60

Y3 3.20

eD

A3

A1

A

E

D2

E2

L

Z b

Pin 1 ID

Y3

X2

X1 Y2

XC

YG

DMG5802LFX

Document number: DS35009 Rev. 3 - 2 6 of 6

www.diodes.com October 2011

DMG5802LFX

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

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