TIG030TS Ordering number : ENA0637A SANYO Semiconductors DATA SHEET TIG030TS N-Channel IGBT Light-Controlling Flash Applications Features * * * * * * Low-saturation voltage. 4V drive. Enhansment type. Built-in gate-to-emitter protection diode. Mounting height 1.1mm, mounting area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 Gate-to-Emitter Voltage (DC) VGES 6 V Gate-to-Emitter Voltage (Pulse) VGES 8 V Collector Current (Pulse) Channel Temperature ICP dVCE / dt Tch Storage Temperature Tstg Maximum Collector-to-Emitter dv / dt PW1ms V PW500s, duty cycle0.5%, CM=400F 150 A VCE320V, starting Tch=25C 400 V / s 150 C --40 to +150 C Electrical Characteristics at Ta=25C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Marking : G030 Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V Ratings min typ max 400 Unit V VGE=6V, VCE=0V 10 A 10 A Continued on next page. * : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/s. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007 TI IM / 11007PJ TI IM TC-00000459 No. A0637-1/4 TIG030TS Continued from preceding page. Parameter Symbol Gate-to-Emitter Threshold Voltage VGE(off) VCE(sat) Collector-to-Emitter Saturation Voltage Ratings Conditions min VCE=10V, IC=1mA typ Unit max 0.5 1.2 V V Input Capacitance Cies 2610 pF Output Capacitance Coes VCE=10V, f=1MHz 59 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 36 pF Package Dimensions 3.7 5.4 IC=150A, VGE=4V VCE=10V, f=1MHz Electrical Connection 0.95 unit : mm (typ) 7006A-007 3.0 8 0.125 5 1 4 6 5 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 1.0 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 0.05 6.4 4.5 0.5 8 7 SANYO : TSSOP8 0.95 0.25 0.425 0.65 1 2 3 4 Top view Large Current R Load Screening Circuit RL=2.0 + CM=400F VCC=320V RG50 TIG030TS 4V 0V 100k Note1. Gate Series Resistance RG50 is recommended for prolection purpose at the time of turn OFF. However, if dv/dt400V/s is satisfied at customer's actual set evaluation, RG<50 can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off. No. A0637-2/4 TIG030TS IC -- VCE 200 5V =4. V GE 4.0V 3.0V 160 140 120 2.5V 100 80 60 140 120 100 80 60 40 20 20 0 0 1.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 5.0 0 1.0 0.5 1.5 Collector-to-Emitter Voltage, VCE -- V 5.0 4.5 4.0 3.5 IC =150A 3.0 130A 2.5 100A 2.0 1.5 2.5 3.0 3.5 1.0 4.0 IT11956 VCE -- VGE 6.0 Tc= --25C 5.5 2.0 Gate-to-Emitter Voltage, VGE -- V IT11955 VCE -- VGE 6.0 Collector-to-Emitter Voltage, VCE -- V 160 40 0 Tc=25C 5.5 5.0 4.5 4.0 IC =150A 3.5 130A 3.0 100A 2.5 2.0 1.5 1.0 0 1 2 3 4 5 Gate-to-Emitter Voltage, VGE -- V 0 6 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V IT11957 VCE -- VGE 6.0 IT11958 VCE(sat) -- Tc 6 Tc=75C VGE=4V 5.5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V Tc=25C VCE=5V 180 Collector Current, IC -- A Collector Current, IC -- A 180 5.0 4.5 IC =1 50A 4.0 130A 3.5 3.0 100A 2.5 2.0 5 4 150A I C= 130A 3 100A 2 1 1.5 1.0 0 1 2 3 4 VCE=10V IC=1mA 0.9 --25 0 25 Cies, Coes, Cres -- pF 0.7 0.6 0.5 0.4 125 150 IT11960 f=1MHz Cies 2 1000 7 5 3 2 100 7 5 Coes Cres 3 0.3 0.2 --50 100 75 Cies, Coes, Cres -- VCE 10000 7 5 3 0.8 50 Case Temperature, Tc -- C IT11959 VGE(off) -- Tc 1.0 0 --50 6 5 Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V IC -- VGE 200 Tc=25C 2 10 --25 0 25 50 75 100 Case Temperature, Tc -- C 125 150 IT11961 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT11962 No. A0637-3/4 TIG030TS SW Time -- IC Switching Time, SW Time -- ns 3 tf td (off ) 2 7 5 tr 2 td(on) 100 Tc=25C Xe -Tube Load VCC=330V, ICP=120A, VGE=4V, PW=50s Driver : SANYO TND721MH5 500 1000 3 Turn OFF dv / dt -- RG 600 RL=2.2, Tc=25C VGE=4V, RG=82 PW=50s Turn OFF, dv / dt -- V / s 5 400 300 200 100 7 5 10 2 3 5 7 2 100 Collector Current, IC -- A Tc=70C 100 80 60 40 20 3 120 IT11964 300 250 200 150 VCM=330V Tc70C VGE=4V RG50 100 0 2 100 350 50 1 80 400 120 0 0 60 CM -- ICP 450 Tc=25C 140 40 Gate Series Resistance, RG -- ICP -- VGE CM=400F 20 IT11963 Maximum Capacitor, CM -- F Collector Current (Pulse), ICP -- A 160 0 0 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V 7 8 IT09937 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A 160 IT11965 Note : TIG030TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0637-4/4