MCMA200P1600SA Thyristor Module VRRM = 2x 1600 V I TAV = 200 A VT = 1.13 V Phase leg Part number MCMA200P1600SA Backside: isolated 1 8 7 3/4 6 5 2 Features / Advantages: Applications: Package: SimBus A Thyristor for line frequency Planar passivated chip Long-term stability Copper base plate with Direct Copper Bonded Al2O3-ceramic Spring contacts for solder-free dirver connection Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Gate: Spring contacts for solder-free PCB-mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140319b MCMA200P1600SA Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 V I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25C 200 A VR/D = 1600 V TVJ = 125C 15 mA I T = 200 A TVJ = 25C 1.16 V 1.40 V 1.13 V I T = 400 A TVJ = 125 C I T = 200 A I T = 400 A I TAV average forward current TC = 90C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current It value for fusing 1.44 V T VJ = 140 C 200 A 314 A TVJ = 140 C 0.81 V 760 W t = 10 ms; (50 Hz), sine TVJ = 45C 6.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 6.48 kA t = 10 ms; (50 Hz), sine TVJ = 140 C 5.10 kA 5.51 kA t = 8,3 ms; (60 Hz), sine VR = 0 V t = 10 ms; (50 Hz), sine TVJ = 45C 180.0 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 174.7 kAs TVJ = 140 C 130.1 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 140 C 126.3 kAs 273 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.08 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 1.6 0.15 TVJ = 140C; f = 50 Hz repetitive, IT = 600 A pF 120 W 60 W 8 W 150 A/s t P = 200 s; di G /dt = 0.5 A/s; IG = 0.5 A; VD = VDRM non-repet., IT = 200 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 140C VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 200 mA TVJ = 140 C 0.2 V 10 mA TVJ = 25 C 300 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 30 s IG = 0.5 A; di G /dt = 2.5 V 0.5 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/s VR = 100 V; I T = 200 A; VD = VDRM TVJ = 140 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20140319b MCMA200P1600SA Package Ratings SimBus A Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 300 Unit A -40 140 C -40 125 C Tstg storage temperature -40 125 C Weight 152 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL typ. terminal to terminal 14.0 terminal to backside 14.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA g 3 5 Nm 2.5 5 Nm 10.0 mm 10.0 mm 4800 V 4000 V Part number M C M A 200 P 1600 SA yywwA add XXXXXXXXX Part Name Date Code Ordering Standard Data Matrix Part Number MCMA200P1600SA Similar Part MCMA200PD1600SA Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA200P1600SA Package Simbus A * on die level = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] SimBus A Delivery Mode Blister Code No. 510387 Voltage class 1600 T VJ = 140 C Thyristor V 0 max threshold voltage 0.81 V R 0 max slope resistance * 0.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved Quantity 9 Data according to IEC 60747and per semiconductor unless otherwise specified 20140319b MCMA200P1600SA Outlines SimBus A 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved 8 7 3/4 6 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20140319b MCMA200P1600SA Thyristor 400 106 6000 VR = 0 V 50 Hz, 80% VRRM 300 5000 ITSM IT 200 105 TVJ = 45C [A] [A] TVJ = 45C 2 It 4000 [A2s] TVJ = 140C TVJ = 125C 100 3000 140C TVJ = 140C TVJ = 25C 0 0.0 104 2000 0.5 1.0 1.5 0.01 0.1 VT [V] 1 1 t [s] Fig. 3 I t vs. time per thyristor 350 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 4 1 200 [A] [V] [s] 1.0 10-2 10-1 4: PGM = 8 W 5: PGM = 60 W 6: PGM = 120 W 100 250 ITAVM tgd 5 1 TVJ = 25C 10.0 6 2 0.1 10-3 dc = 1 0.5 0.4 0.33 0.17 0.08 300 3 IGD, TVJ = 140C 4 5 6 7 8 910 t [ms] 100.0 10 1: I , T = 125C GT VJ 3 2 Fig. 2 Surge overload current vs. time per thyristor Fig. 1 Forward current vs. voltage drop per thyristor VG 2 101 lim. 150 typ. 100 50 0.1 0.01 102 0 0.10 1.00 10.00 0 40 IG [A] IG [A] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [C] Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current vs. case temperature per thyr. 0.16 350 300 RthHA 0.08 0.10 0.20 0.40 0.60 0.80 dc = 1 0.5 0.4 0.33 0.17 0.08 250 Ptot 200 [W] i Rthi (K/W) 1 0.0050 2 0.0110 3 0.0430 4 0.0610 5 0.0300 0.12 ZthJC ti (s) 0.00010 0.01800 0.16000 0.50000 1.60000 0.08 150 [K/W] 100 0.04 50 0.00 0 0 50 100 150 200 250 IT(AV) [A] 0 50 100 Tamb [C] Fig. 7 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved 150 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20140319b Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MCMA200P1600SA