MSC1040.PDF 03-12-99
2N3740A
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
V
CEO*
Collector-Emitter Voltage 60 Vdc
VEB*Emitter-Base Voltage 7.0 Vdc
VCB*Collector-Base Voltage 60 Vdc
IC*Peak Collector Current 10 Adc
IC*Continuous Collector Current 4.0 Adc
IB*Base Current 2.0 Adc
T
STG*
Storage Temperature -65 to 200 °°C
TJ*Operating Junction Temperature -65 to 200 °°C
PD*
θθ
JC
Total Device Dissipation
TC = 25°°C
Derate above 25°°C
Thermal Impedance
25
0.143
7
Watts
W/°°C
°°
C/W
Medium Power
PNP Transistors
TO-66
APPLICATIONS:
• Drivers
• Switches
• Medium-Power Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
*
Indicates JEDEC registered data.
FEATURES:
• Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
• High Gain Characteristics: hFE @ IC = 250 mA: 30-100
• Excellent Safe Area Limits
• Low Collector Cutoff Current: 100 nA (Max) 2N3740A
•
MSC1040.PDF 03-12-99
2N3740A
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted) VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units
VCEO(sus)* Collector-Emitter
Sustaining Voltage IC = 100 mAdc, IB = 0 (Note 1) 60 ---- Vdc
IEB0* Emitter Base Cutoff
Current VEB = 7.0 Vdc ---- 100 nAdc
ICEX* Collector Cutoff Current VCE = 60 Vdc, VBE(off) = 1.5 Vdc
VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 150°°C----
---- 100
0.5 nAdc
mAdc
ICEO*Collector-Emitter Cutoff
Current VCE = 40 Vdc, IB = 0 ---- 1.0 µµAdc
ICBO* Collector Base Cutoff
Current VCB = 60 Vdc, IE = 0 ---- 100 nAdc
hFE*DC Current Gain
(Note 1) IC = 100 mAdc, VCE = 1.0 Vdc
IC = 250 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.0 Vdc
40
30
20
10
----
100
----
----
----
----
----
----
VCE(sat)*Collector-Emitter
Saturation Voltage
(Note 1)
IC = 1.0 Adc, IB = 125 mAdc ---- 0.6 Vdc
VBE* Base-Emitter Voltage
(Note 1) IC = 250 mAdc, VCE = 1.0 Vdc ---- 1.0 Vdc
fT*Current Gain Bandwidth
Product IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 MHz 3.0 ---- MHz
hfe*Small-Signal Current
Gain IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz 25 ---- ----
Cob* Common Base Output
Capacitance VCB = 10 Vdc, IC = 0, f = 100 kHz ---- 100 pF
Note 1: Pulse Test: PW ≤≤ 300µµs, Duty Cycle ≤≤ 2.0%
* Indicates JEDEC registered data.
MSC1040.PDF 03-12-99
2N3740A
PACKAGE MECHANICAL DATA:PACKAGE MECHANICAL DATA:
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
.050 [1.27]
.075 [1.91]
.028 [0.71]
.034 [0.86]
.958 [24.33]
.962 [24.43]
.142 [3.61]
.152 [3.86]
.620 [15.75] MAX
R.350 [8.89] MAX
.470 [11.94]
.500 [12.70]
.250 [6.35]
.340 [8.64] .190 [4.83]
.210 [5.33]
.095 [2.41]
.105 [2.67]
.570 [14.48]
.590 [14.99]
.360 [9.14] MIN
R.145 [3.68] MAX
.050 [1.27] MAX
SEATING PLANE
2 1
