NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA SFH 300 SFH 300 FA Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 420 nm bis 1130 nm (SFH 300) und bei 880 nm (SFH 300 FA) * Hohe Linearitat * 5 mm-Plastikbauform im LED-Gehause * Gruppiert lieferbar * Especially suitable for applications from 420 nm to 1130 nm (SFH 300) and of 880 nm (SFH 300 FA) * High linearity * 5 mm LED plastic package * Available in groups Anwendungen Applications * Computer-Blitzlichtgerate * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * * * * Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Typ Type Bestellnummer Ordering Code SFH 300 Q62702-P1189 SFH 300 FA Q62702-P1193 SFH 300-3/4 Q62702-P3586 SFH 300 FA-3/4 Q62702-P3585 2001-02-22 1 SFH 300, SFH 300 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Lottemperatur bei Tauchlotung TS Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s 260 C Lottemperatur bei Kolbenlotung TS Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom t 3 s 300 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 C Power dissipation Ptot 200 mW Warmewiderstand Thermal resistance RthJA 375 K/W 2001-02-22 2 SFH 300, SFH 300 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value SFH 300 SFH 300 FA Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 870 nm Spektraler Bereich der Fotoempfindlichkeit 420 ... 1130 730 ... 1120 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.12 0.12 mm2 Abmessungen der Chipflache Dimensions of chip area LxB LxW 0.5 x 0.5 0.5 x 0.5 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 4.1 ... 4.7 4.1 ... 4.7 mm Halbwinkel Half angle 25 25 Grad deg. Kapazitat Capacitance VEC = 0 V, f = 1 MHz, E = 0 CCE 6.5 6.5 pF Dunkelstrom Dark current VCE = 35 V, E = 0 ICEO 5 ( 100) 5 ( 100) nA S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 2001-02-22 3 SFH 300, SFH 300 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 300: Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V -3 Einheit Unit -4 IPCE 0.63 ... 1.25 1 ... 2 1.6 mA IPCE 3.4 5.4 8.6 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k t r, t f 7.5 10 10 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 VCEsat 130 140 150 mV 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. 2001-02-22 4 SFH 300, SFH 300 FA Relative Spectral Sensitivity, SFH 300 Srel = f () Relative Spectral Sensitivity, SFH 300 FA Srel = f () Dark Current ICEO/ICEO25 = f (TA), VCE = 25 V, E = 0 Photocurrent Photocurrent IPCE = f (Ee), VCE = 5 V ICEO = f (VCE), E = 0 IPCE/IPCE 25 = f (TA), VCE = 5 V Directional Characteristics Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 Srel = f () 2001-02-22 Dark Current 5 SFH 300, SFH 300 FA Mazeichnung Package Outlines 7.8 (0.307) 7.5 (0.295) 25.2 (0.992) 24.2 (0.953) 9.0 (0.354) 8.2 (0.323) Collector 5.9 (0.232) 5.5 (0.217) o5.1 (0.201) 1.2 (0.047) Chip position 11.6 (0.457) 11.2 (0.441) 4.5 (0.177) 4.2 (0.165) 1.0 (0.039) 1.8 (0.071) 1.3 (0.051) 2.54 (0.100) spacing Emitter 0.6 (0.024) 0.4 (0.016) 1.0 (0.039) 0.7 (0.028) Area not flat 0.6 (0.024) 0.4 (0.016) GEOY6652 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 6