SFH 300
SFH 300 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
SFH 300 SFH 300 FA
2001-02-22 1
Features
• Especially suitable for applications from
420 nm to 1130 nm (SFH 300) and of 880 nm
(SFH 300 FA)
• High linearity
• 5 mm LED plastic package
• Available in groups
Applications
• Computer-controlled flashes
• Photointerrupters
• Industrial electronics
• For control and drive circuits
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 420 nm bis 1130 nm (SFH 300) und bei
880 nm (SFH 300 FA)
• Hohe Linearität
• 5 mm-Plastikbauform im LED-Gehäuse
• Gruppiert lieferbar
Anwendungen
• Computer-Blitzlichtgeräte
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Typ
Type Bestellnummer
Ordering Code
SFH 300 Q62702-P1189 SFH 300 FA Q62702-P1193
SFH 300-3/4 Q62702-P3586 SFH 300 FA-3/4 Q62702-P3585
2001-02-22 2
SFH 300, SFH 300 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Löttemperatur bei Tauchlötung
Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s
Dip soldering temperature ≥ 2 mm distance from
case bottom, soldering time t ≤ 5 s
TS260 °C
Löttemperatur bei Kolbenlötung
Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s
Iron soldering temperature ≥ 2 mm distance from
case bottom t ≤ 3 s
TS300 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector current IC50 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7V
Verlustleistung, TA = 25 °C
Power dissipation Ptot 200 mW
Wärmewiderstand
Thermal resistance RthJA 375 K/W
SFH 300, SFH 300 FA
2001-02-22 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 300 SFH 300 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 850 870 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ420 …1130 730 …1120 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A0.12 0.12 mm2
Abmessungen der Chipfläche
Dimensions of chip area L×B
L×W0.5 ×0.5 0.5 ×0.5 mm ×mm
Abstand Chipoberfläche zu
Gehäuseoberfläche
Distance chip front to case surface
H4.1 …4.7 4.1 …4.7 mm
Halbwinkel
Half angle ϕ± 25 ± 25 Grad
deg.
Kapazität
Capacitance
VEC = 0 V, f = 1 MHz, E=0
CCE 6.5 6.5 pF
Dunkelstrom
Dark current
VCE = 35 V, E=0
ICEO 5 (≤ 100) 5 (≤ 100) nA
2001-02-22 4
SFH 300, SFH 300 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
SFH 300:
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
0.63 …1.25
3.4
1…2
5.4
≥ 1.6
8.6
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf7.5 10 10 µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 130 140 150 mV
1) IPCEmin ist der minima le F ot os tr om der jew eiligen Gru ppe.
1) IPCEmin is the min. pho to cu rrent of the specif ied group.
SFH 300, SFH 300 FA
2001-02-22 5
Relati ve Sp ectral Sensi ti vi ty,
SFH 300 Srel = f (λ)
Photocurrent
IPCE/IPCE 25° = f (TA), VCE = 5 V
Directional Chara cter i sti cs
Srel = f (ϕ)
Relative Spectral Sensitivity,
SFH 300 FA Srel = f (λ)
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current ICEO/ICEO25° = f (TA),
VCE = 25 V, E = 0
Dark Current
ICEO = f (VCE), E = 0
Collecto r-E mi tter Capacitan ce
CCE = f (VCE), f = 1 MHz, E = 0
2001-02-22 6
SFH 300, SFH 300 FA
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
4.5 (0.177)
4.2 (0.165)
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
25.2 (0.992)
24.2 (0.953)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
0.6 (0.024)
0.4 (0.016)
1.0 (0.039)
0.7 (0.028)
ø5.1 (0.201)
Chip position
Area not flat
Emitter
GEOY6652
1.3 (0.051)
1.0 (0.039)
11.6 (0.457)
11.2 (0.441)
Collector
