2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET TYPE VDSS RDS(on) ID 60 V 60 V < 5 (@ 10V) < 5 (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION This MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-92 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH SWITCHING APPLICATIONS SOT23-3L TO-92 ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL April 2004 1/10 2N7000 - 2N7002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-92 VDS VDGR VGS ID IDM () PTOT Unit STO23-3L Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 k) 60 V 18 V Gate- source Voltage Drain Current (continuous) at TC = 25C 0.35 Drain Current (pulsed) 1.4 1 A 1 0.35 W TO-92 SOT23-3L 125 357.1 (*) Total Dissipation at TC = 25C 0.25 A (*)Pulse width limited by safe operating area THERMAL DATA Rthj-amb TJ Tstg Thermal Resistance Junction-ambient Max Operating Junction Temperature C/W - 55 to 150 Storage Temperature C (*) DEVICE MOUNTED ON A PCB AREA OF 1cm2 ON/OFF Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 A VDS = Max Rating, TC = 125C 10 A Gate-body Leakage Current (VDS = 0) VGS = 18 V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.1 3 V RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.5 A 1.8 2 5 5.3 IDSS IGSS 2/10 60 Unit 1 V 2N7000 - 2N7002 ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VDS = 10 V , ID = 0.5 A 0.6 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 43 20 6 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V, ID = 0.5 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 1) 5 15 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 30 V, ID = 1 A, VGS = 5 V (see test circuit, Figure 2) 1.4 0.8 0.5 2 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-Off Delay Time Fall Time Test Conditions Min. VDD = 30 V, ID = 0.5 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 1) 7 8 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1 A, di/dt = 100 A/s, VDD = 20 V, Tj = 150C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. 32 25 1.6 Max. Unit 0.35 1.40 A A 1.2 V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/10 2N7000 - 2N7002 Safe Operating Area For TO-92 Thermal Impedance For TO-92 Safe Operating Area For SOT23-3L Thermal Impedance For SOT23-3L Output Characteristics Transfer Characteristics 4/10 2N7000 - 2N7002 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10 2N7000 - 2N7002 Source-drain Diode Forward Characteristics 6/10 Normalized BVDSS vs Temperature 2N7000 - 2N7002 Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 7/10 2N7000 - 2N7002 TO-92 MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.38 MIN. TYP 4.78 0.17 0.188 b 0.33 0.48 0.013 0.018 D 4.43 4.83 0.174 0.190 e1 1.07 1.74 E 3.86 MAX. 0.152 0.042 0.068 L 14.07 14.87 0.553 0.585 S1 0.92 1.12 0.036 0.044 W 0.36 0.56 0.014 V 8/10 TYP. 4 0.022 4 2N7000 - 2N7002 SOT23-3L MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 0.903 1.220 0.035 0.048 A1 0.013 0.100 0.0005 0.004 A2 0.890 1.120 0.035 0.044 b 0.370 0.510 0.014 0.020 C 0.085 0.180 0.003 0.007 D 2.800 3.040 0.110 0.120 E 2.100 2.64 0.082 0.104 E1 1.200 1.400 0.047 0.055 0.040 e 0.890 1.030 0.035 e1 1.780 2.050 0.070 0.080 L 0.400 0.600 0.015 0.023 9/10 2N7000 - 2N7002 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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