1/10April 2004
2N7000
2N7002
N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92
STripFET™II MOSFET
INTERNAL SCHEMATIC DIAGRAM
SOT23-3L TO-92
TYPICAL RDS(on) = 1.8Ω @10V
LOW Qg
LOW THRESHOLD DRIVE
DESCRIPTION
This MOSFET is the second generation of STMicro-
electronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
HIGH SWITCHING APPLICATIONS
ORDER CODE
TYPE VDSS RDS(on) ID
2N7000
2N7002 60 V
60 V <5Ω(@ 10V)
<5Ω(@ 10V) 0.35 A
0.20 A
PART NUMBER MARKING PACKAGE PACKAGING
2N7000 2N7000G TO-92 BULK
2N7002 ST2N SOT23-3L TAPE & REEL
SOT23-3L
1
2
3
TO-92
2N7000 - 2N7002
2/10
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
THERMAL DATA
(*) DEVICE MOUNTED ON A PCB AREA OF 1cm2
ON/OFF
Symbol Parameter Value Unit
TO-92 STO23-3L
VDS Drain-source Voltage (VGS =0) 60 V
VDGR Drain-gate Voltage (RGS =20kΩ)60 V
VGS Gate- source Voltage ± 18 V
IDDrain Current (continuous) at TC=25°C0.35 0.25 A
IDM (
)Drain Current (pulsed) 1.4 1 A
PTOT Total Dissipation at TC=25°C10.35W
TO-92 SOT23-3L
Rthj-amb Thermal Resistance Junction-ambient Max 125 357.1 (*) °C/W
TJOperating Junction Temperature - 55 to 150 °C
Tstg Storage Temperature
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µA, VGS =0 60 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) VDS =MaxRating 1µA
VDS =MaxRating,T
C= 125°C10 µA
IGSS Gate-body Leakage
Current (VDS =0) VGS = ± 18 V ±100 nA
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D= 250 µA 12.13V
RDS(on) Static Drain-source On
Resistance VGS =10V,I
D=0.5A
VGS =4.5V,I
D=0.5A 1.8
25
5.3 Ω
Ω
3/10
2N7000 - 2N7002
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =10V,ID= 0.5 A 0.6 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V,f=1MHz,V
GS =0 43
20
6
pF
pF
pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Delay Time
Rise Time VDD =30V,I
D=0.5A
RG=4.7ΩVGS =4.5V
(see test circuit, Figure 1)
5
15 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =30V,I
D=1A,
VGS =5V
(see test circuit, Figure 2)
1.4
0.8
0.5
2nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tfTurn-Off Delay Time
Fall Time VDD =30V,I
D=0.5A,
RG=4.7Ω, VGS =4.5V
(see test circuit, Figure 1)
7
8ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed) 0.35
1.40 A
A
VSD (1) ForwardOnVoltage ISD =1A,V
GS =0 1.2 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1 A, di/dt = 100 A/µs,
VDD =20V,T
j= 150°C
(see test circuit, Figure 3)
32
25
1.6
ns
nC
A
2N7000 - 2N7002
4/10
Safe Operating Area For SOT23-3L
Output Characteristics
Thermal Impedance For SOT23-3L
Safe Operating Area For TO-92 Thermal Impedance For TO-92
Transfer Characteristics
5/10
2N7000 - 2N7002
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
2N7000 - 2N7002
6/10
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
7/10
2N7000 - 2N7002
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For
Resistive Load
2N7000 - 2N7002
8/10
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.38 4.78 0.17 0.188
b 0.33 0.48 0.013 0.018
D 4.43 4.83 0.174 0.190
E 3.86 0.152
e1 1.07 1.74 0.042 0.068
L 14.07 14.87 0.553 0.585
S1 0.92 1.12 0.036 0.044
W 0.36 0.56 0.014 0.022
V4°4°
TO-92 MECHANICAL DATA
9/10
2N7000 - 2N7002
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 0.903 1.220 0.035 0.048
A1 0.013 0.100 0.0005 0.004
A2 0.890 1.120 0.035 0.044
b 0.370 0.510 0.014 0.020
C 0.085 0.180 0.003 0.007
D 2.800 3.040 0.110 0.120
E 2.100 2.64 0.082 0.104
E1 1.200 1.400 0.047 0.055
e 0.890 1.030 0.035 0.040
e1 1.780 2.050 0.070 0.080
L 0.400 0.600 0.015 0.023
SOT23-3L MECHANICAL DATA
2N7000 - 2N7002
10/10
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consequen ces of use o f suc h info rmation nor for any infr ingeme nt of paten ts or other righ ts of third parties whic h may resul t from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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