10900 PAGE AVE.
ST. LOUIS, MO. 63132 USA
FEATURES PRODUCT DESCRIPTION
PACKAGE DIMENSIONS inch (mm)
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
0.6
±70
21
30
ISC
SR
ID
VBR
CJ
θ1/2
SHORT CIRCUIT CURRENT @ 100 2850 K
SENSITIVITY @ PEAK
DARK CURRENT @ VR = 10 V
REVERSE BREAKDOWN VOLTAGE @ 100 µA
JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz
ANGULAR RESPONSE (50% RESPONSE POINT)
TYP.MIN.SYMBOLPARAMETER
µA
A/W
nA
V
pF
Degrees
25
100
UNITSMAX.
This VTP processed P on N planar silicon
photodiode is housed in a clear, T-1 3/4 end-
looking package.
These diodes exhibit low dark current under
reverse bias. The VTP process offers low
capacitance, resulting in fast response times.
•Low dark current
•Fast response
•Blue to IR spectral range
•Low junction capacitance
CASE 26F T-1 3/4 FLAT
CHIP SIZE: .075 x .075 (1.90 x 1.90)
TOTAL EXPOSED AREA: .0036 in2 (2.326 mm2)
FAX 314-423-3956
PHONE 314-423-4900
PRELIMINARY ENGINEERING DATA SHEET
SILICON PHOTODIODE
VTP1232F
GENERAL CHARACTERISTICS
mV
nm
nm
ns
% / °C
% / °C
mV/ °C
°C
420
920
400 - 1100
20
+0.20
+11.0
−2.0
− 40 to +100
VOC
λpk
λrange
tR / tF
TC ISC
TC ID
TC VOC
TAMB
OPEN CIRCUIT VOLTAGE @ 100 2850 K SOURCE
PEAK SPECTRAL RESPONSE @ 25°C
SPECTRAL APPLICATION RANGE
RISE/FALL TIMES @ 800 nm, VR =10 V, RL = 50 Ω
TEMPERATURE COEFFICIENT
SHORT CIRCUIT CURRENT @ 2850 K SOURCE
DARK CURRENT @ VR = 10 V
OPEN CIRCUIT VOLTAGE
TEMPERATURE RANGE, OPERATING & STORAGE
UNITSTYPICAL RATINGSYMBOLPARAMETER
Specifications subject to change without prior notice.
Information supplied by Excelitas Technologies is
believed to be reliable, however, no responsibility is
assumed for possible inaccuracies or omissions. The
user should determine the suitability of this product in
his own application. No patent rights are granted to any
devices or circuits described herein.
TYPICAL CHARACTERISTIC CURVES
ABSOLUTE SPECTRAL RESPONSE RELATIVE JUNCTION CAPACITANCE vs BIAS VOLTAGE
(REFERRED TO ZERO BIAS)
