MBRD5100 Technical Data Data Sheet N0224, Rev. A MBRD5100 SCHOTTKY RECTIFIER Features 150 TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability "-A" is an AEC-Q101 qualified device This is a Pb - Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request DPAK Circuit Diagram Applications Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery charging Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Condition VRRM VRWM VR - Average Rectified Forward Current IF (AV) Peak One Cycle Non-Repetitive Surge Current 50% duty cycle @Tc=105C, rectangular wave form IFSM 8.3ms, Half Sine pulse Max. Units 100 V 5 A 120 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units V Forward Voltage Drop* VF1 @ 5A, Pulse, TJ = 25 C 0.78 0.85 @ 5A, Pulse, TJ = 125 C @VR = rated VR, TJ = 25 C 0.70 0.75 V Reverse Current * VF2 IR1 0.05 1.00 mA IR2 @VR = rated VR , TJ = 125 C 1 15 mA CT @VR = 5.0V, TC = 25 C fSIG = 1MHz - 140 300 pF - 10,000 V/s Junction Capacitance Voltage Rate of Change dv/dt * Pulse width < 300 s, duty cycle < 2% China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com MBRD5100 Technical Data Data Sheet N0224, Rev. A Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Approximate Weight Case Style Symbol Condition Specification Units TJ Tstg - -55 to +150 -55 to +150 C C RJC - 6 C/W wt - 0.39 g DPAK Ratings and Characteristics Curves 1000 TJ=25 100 10 0 5 10 15 20 25 30 35 40 Instantaneous Reverse Current-IR(MA) 10 1 TJ=125 0.1 0.01 TJ=25 0.001 10 20 30 40 50 60 70 Fig.2-Typical Reverse Characteristics Fig.1-Typical Junction Capacitance 100 TJ=125 10 TJ=25 1 0.5 0.6 0.7 80 0.8 90 Pe r ce nt of Rate d Pe ak Re ve r s e V oltage (%) Reverse Voltage (V) Instantaneous Forward Current (A) Junction Capacitance (PF) 10000 0.9 1 1.1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com 1.2 100 MBRD5100 Technical Data Data Sheet N0224, Rev. A Mechanical Dimensions DPAK SYMBOL A A1 b c D D1 D2 E e L L1 L2 L3 L4 h V Ordering Information Device MBRD5100 Package DPAK (Pb-Free) Millimeters Inches Min. Max. 2.20 2.40 0.00 0.127 0.66 0.86 0.46 0.60 6.50 6.70 5.13 5.46 4.83 REF. 6.00 6.20 2.186 2.386 9.70 10.40 2.90 REF. 1.40 1.70 1.60 REF. 0.60 1.00 1.10 1.30 0 8 0.00 0.30 5.35 REF. Min. Max. 0.087 0.094 0.000 0.005 0.026 0.034 0.018 0.024 0.256 0.264 0.202 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.381 0.409 0.144 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0 8 0.000 0.012 0.211 REF. Marking Diagram Where XXXXX is YYWWL Shipping 2500pcs / reel MBRD5100 -A SSG YY WW L For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. = Part Name = AEC-Q101 = SSG = Year = Week = Lot Number CautionsMolding resin Epoxy resin UL:94V-0 Carrier Tape & Reel Specification DPAK SYMBOL A B C d E F P0 P P1 W Millimeters Min. Max. 6.80 10.40 2.60 1.45 1.65 7.40 3.90 7.90 1.90 15.90 China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com 7.00 10.60 2.80 1.65 1.85 7.60 4.10 8.10 2.10 16.30 MBRD5100 Technical Data Data Sheet N0224, Rev. A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com