GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) LSIC2SD120C10 RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features * P ositive temperature coefficient for safe operation and ease of paralleling * 1 75 C maximum operating junction temperature * E xtremely fast, temperature-independent switching behavior * D ramatically reduced switching losses compared to Si bipolar diodes * Excellent surge capability Circuit Diagram TO-252-2L (DPAK) Applications * B oost diodes in PFC or DC/DC stages Case * S witch-mode power supplies * Solar inverters * Industrial motor drives * EV charging stations * U ninterruptible power supplies Environmental Pin 1 Pin 2 1 2 * L ittelfuse "RoHS" logo = RoHS conform RoHS * L ittelfuse "HF" logo = Halogen Free * L ittelfuse "PB-free" logo = Pb PB--free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Symbol Conditions Value Unit VRRM - 1200 V V VR IF IFSM Power Dissipation PTot Operating Junction Temperature TJ Storage Temperature Soldering Temperature (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 Tj = 25 C 1200 TC = 25 C 33 TC = 135 C 16 TC = 156 C 10 TC = 25 C, TP = 10 ms, Half sine pulse 80 TC = 25 C 176 TC = 110 C 76 A A W - -55 to 175 C TSTG - -55 to 150 C Tsold - 260 C GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) Electrical Characteristics Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance Value Conditions C Min. Max. 1.8 IF = 10 A, TJ = 25 C - 1.5 IF = 10 A, TJ = 175 C - 2.2 VR = 1200 V , TJ = 25 C - <1 VR = 1200 V , TJ = 175 C - 10 VR = 1 V, f =1 MHz - 582 VR = 400 V, f = 1 MHz - 53 VR = 800 V, f = 1 MHz - 40 - 57 VR Total Capacitive Charge Typ. QC VR = 800 V, C(V)dV Qc = Unit V 100 A pF nC 0 Footnote: TJ = +25 C unless otherwise specified Thermal Characteristics Characteristics Symbol Conditions RJC - Thermal Resistance Figure 1: Typical Foward Characteristics Value Reverse Current, I R (A) 14 Forward Current (A) - 0.85 12 10 8 6 C/W 1E - 5 1E - 6 TJ = 175 C TJ = 150 C 1E - 7 TJ = 125 C TJ = 25 C 4 2 1E - 8 0 0 -0.5 Unit Max. 1E- 4 TJ = 25 C TJ = 125 C TJ = 150 C TJ = 175 C 16 Typ. Figure 2: Typical Reverse Characteristics 20 18 Min. 0.5 1.5 2.5 3.5 4.5 200 400 600 800 1000 1200 Reverse Voltage, V R (V) Forward Voltage (V) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) Figure 3: Power Derating Figure 4: Current Derating 200.00 120 180.00 110 Forward Current (A) 160.00 140.00 Power (W) 10 % Duty 30 % Duty 50 % Duty 70 % Duty 100 120.00 100.00 80.00 60.00 90 80 DC 70 60 50 40 30 40.00 20 20.00 10 0.00 0 25 50 75 100 125 150 25 175 50 100 125 150 175 Case Temperature (C ) Case Temperature (C ) Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage 70 600 60 Capacive Charge (nC) 500 Capacitance (pF) 75 400 300 200 100 50 40 30 20 10 0 1 10 Voltage (V) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 100 1000 0 1000 0 200 400 Voltage (V) 600 800 1000 GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance 25 Normalized Transient Thermal Impedance 1.00E+00 Stored Energy (uJ) 20 15 10 5 0 0 200 400 600 800 1000 1.00E-01 0.5 0.3 0.1 0.05 0.02 0.01 1.00E-02 Single 1.00E 03 1.E- 05 Part Numbering and Marking System SIC2SD120C10 LF YYWWD ZZZZZZ-ZZ SIC = SiC Diode 2 = Gen2 SD = Schottky Diode 120 = Voltage Rating (1200 V) C = TO-252-2L (DPAK) 10 = Current Rating ( 10 A) YY = Year WW = Week D = Special code (fixed) ZZZZZZ-ZZ = Lot Number 1.E-04 1.E- 03 1.E- 02 1.E-01 Pulse Width (s) Voltage (V) Packing Options Part Number Marking Packing Mode M.O.Q LSIC2SD120C10 SIC2SD120C10 Tape and Reel 2500 (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) Dimensions TO-252-2L (DPAK) A E Symbol c2 L4 A1 H D D1 L3 b3 e 2x b 2x c SEE DETAIL "C" E1 P DETAIL "C" - L4- MAXIMUM PLASTIC PROTRUSION. - L2- REFERENCE FOR FOOT LENGTH MEASUREMENT. L2 NOTE: L Recommended Solder Pattern Layout 2.28 2.04 6.80 6.25 1.50 3.07 UNIT: mm Carrier Tape & Reel Specification TO-252-2L (DPAK) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 A A1 b b3 c C2 D D1 E E1 e H L L2 L3 L4 P Inches Millimeters Min Nom Max Min Nom Max 0.085 0.090 0.095 2.16 2.29 2.41 0 0.003 0.005 0 0.08 0.13 0.025 0.030 0.035 0.64 0.76 0.89 0.195 0.200 0.215 4.95 5.08 5.46 0.018 0.020 0.024 0.46 0.51 0.61 0.018 0.032 0.035 0.46 0.81 0.89 0.235 0.240 0.245 5.97 6.10 6.22 0.205 - - 5.21 - - 0.250 0.260 0.265 6.35 6.60 6.73 - - 4.32 - - 0.170 0.090 BSC 2.29 BSC 0.370 0.387 0.410 9.40 9.83 10.41 0.040 0.045 0.050 1.02 1.14 1.27 0.010 BSC 0.25 BSC 0.035 - 0.050 0.89 - 1.27 0 - 0.006 0 - 0.15 0 - 8 0 - 8 GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) Carrier Tape & Reel Specification TO-252-2L (DPAK) Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17