DSA20C150PB
1 2 3
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
Part number
DSA20C150PB
Backside: cathode
FAV
F
V V0.73
RRM
10
150
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200128bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSA20C150PB
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
0.87
R2.4 K/W
R
min.
10
V
RSM
200T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
155
P
tot
65 WT = 25°C
C
RK/W
10
150
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
0.98
T = 25°C
VJ
125
V
F0
0.54T = °C
VJ
175
r
F
11.4
mΩ
0.73T = °C
VJ
I = A
F
10
0.85
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
150
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
53
junction capacitance
V = V24 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
220 A
150
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
150
0.5
IXYS reserves the right to change limits, conditions and dimensions. 20200128bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSA20C150PB
Ratings
XXXXXX
yywwZ
Logo
Part Number
Date Code
Lot #
123456
Product Marking
Location
D
S
A
20
C
150
PB
Part description
Diode
Schottky Diode
low VF
Common Cathode
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C175
virtual junction temperature
-55
Weight g2
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DSA20C150PN TO-220ABFP (3) 150
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
DSA20C150PB 503913Tube 50DSA20C150PBStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.54
mΩ
V
0 max
R
0 max
slope resistance *
8.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
°C
* on die level
175
IXYS reserves the right to change limits, conditions and dimensions. 20200128bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSA20C150PB
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
= supplier option
1 2 3
4
1 2 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20200128bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSA20C150PB
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
5
10
15
2
0
0 40 80 120 160
0.0001
0.001
0.01
0.1
1
10
100
0 10 20 30 40
0
10
20
30
1 10 100 1000 10000
0
1
2
3
0 40 80 120 160
0
10
20
30
40
IF(AV)
[A]
TC[°C]
t[ms]
0 20 40 60 80 100 120 140 160
0
50
100
150
200
2
5
0
CT
[pF]
IR
[mA]
IF
[A]
VF[V] VR[V] VR[V]
ZthJC
[K/W]
DC
d = 0.5
IF(AV) [A]
P(AV)
[W]
TVJ =
150°C
125°C
25°C
75°C
100°C
125°C TVJ= 25°C
d =
DC
0.5
0.33
0.25
0.17
0.08
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current IR
vs. reverse voltage VR
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage VR
Fig. 4 Avg: forward current IF(AV)
vs. case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
50°C
25°C
150°C
TVJ = 175°C
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20200128bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved