_ oe _ T= 07-15 INTERNATIONAL SEMICOND USE ) MM 9000378 OO00136 722 MISEM ts International Semiconductor, Inc. FRIA THRU FRIM SURFACE MOUNT GLASS PASSIVATED FAST SWITCHING SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts FEATURES CURRENT 1.0 Ampere * For surface mounted applications + High temperature metallurgically bonded-no compression contracts as found in other diced- constructed rectifiers * Plastic package has Underwriters Laboratory [A CA] | Flammability Classification 94V-0 * Capable of meeting environmental standards of | MIL-STD-19500 kk B 4 k- B > * Fast switching for high efficiency + submersible temperature of 265C for 10 seconds cL T in solder bath. Jp Ke -_ MECHANICAL DATA Case:Molded plastic Terminals:Solderable per MIL-STD-202 Method 208 A B c D E FE K L Polarity:Two bands indicate cathode MAX 0.077 0.160 0.130 0.200 0.070 0.235 0.015 0,030 Ist band denotes device type MIN 0.083 0.180 0.150 0.220 0.085 0.255 0.030 0.060 2nd band denotes voltage type DIMENSIONS IN MILLIMETERS Mounting position:Any MIN 196 4.06 330 5.08 177 5,97 0,381 0,760 MAX 2.10 457 381 559 216 648 0,762 1,620 Typical Standoff Height:0.004"-0.008"(0.I1mm-0.2mm) MAKIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratomgs at 25C ambient temperature unless otherwise specified. Resistive or inductive load. FRIA | FRIB | FRID | FRIG | FRIJ | FRIK | FRIM Units For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 Virm Maximum RMS Voltage 35 10 140 280 420 560 700 Vems Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 Voc Maximum Average Forward Rectified Current 10 A at T:=55C Gv) Peak Forward Surge Current, Ifm(Sruge): 8.3ms single half sine-wave superimposed 40 APk on rated load GQEDEC method) Maximum Instantaneous Forward Voltage at 1.0A 13 v Maximum Full Load Reverse Current, 50 Full Cycle Average, Ta=55C nA Maximum DC Reverse Current at Ta=25C 5.0 uA Rated DC Blocking Voltage Ta=125C 100 WA Maximum Reverse Recovery Time(Note 1)Ts=25C 150 | 250 | 500 | 500 ns Typical Junction Capacitance(Note 2) 15 PF Maximum Thermal Resistance Rthjl(Note 3) 30 Rthjl(Note 4) 75 crw Operating and Storage Temperature Range T,, Tstc -65 to +150 x6) NOTES: 1. Reverse Recovery Test Conditions IF =0.5A, IR = 1A,Irr =0.25A 2. Measured at 1,0MHz and applied Reverse voltage of 4.0 volts. 3. Termal resistance junction to terminal. 6.0m copper pads to each terminal, 4. Termal resistance junction to ambient. 6.0m copper pads to each terminal. SMD-4INTERNATIONAL SEMICOND W9E D MM 9000378 0000137 bho MMISEN ~-O"l- Ss RATING AND CHARACTERISTIC CURVES Fig. 2~PEAK FORWARD SURGE CURRENT FRIA THRU FRIM 8 Fe iva Ww a Zz. % = - i . - 65C TO 178C 2 Fig. 1~FORWARD CURRENT DERATING CURVE Be iz x= 8 AT ew 1.6 i | g Zz : Ny Ow 14 | MAXIMUM AVERAGE CURRENT RATING Be : N\ iy : 3 SINGLE PHASE. HALF-WAVE, 60Hz. ui 12 } : aa 12 i RESISTIVE OF INDUCTIVE LOAD. Qa i ; cz 378" (Geom) LEAD LENGTHS < i} ! zz 10 cz L $ - Re | a xs | i 2 AN a ST we 6 ~ & ws 4 ~ 2 0 gs i pe 3 1 2 4 68 20 4060 80100 Gi . * < 7 NUM < 20 40 60 & 100 = 120 140 160 180 BER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, C Fig. 3~TYPICAL FORWARD CHARACTERISTICS Fig. 4TYPICAL JUNCTION CAPACITANCE 10 o1 CAPACITANCE, pF 3 INSTANTANEOUS FORWARD CURRENT AMPERES 1 10 100 or 06 os 12 15 17 REVERSE VOLTAGE, Vdc INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig. 5-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50n 10n Noninductive Noninductive ter MW *O05A DUT (=) (+) ~ PULSE 0 == 26Vde GENERATOR -025 (approx.) NOTE 2 (-) 1) (+) Non- OSCILLOSCOPE Inductive NOTE 1 10 NOTES: 1. Rise Time = 7ns max., Z rhteme set Time Base for 50/100ns/em Input Impedance = 1 megohm, 22pF ~ 2. Rise Time = 10ns max., Source Impedance = 50 Ohms Corporate Offices: Sales Office 727 Raritan Road, Suite 203 574 E. Alamo, #4( Clark, NJ 07066 Chandler, AZ 85225 Phone (908) 396-0322 FAX (908) 396-0410 Phone (602) 497-8172 FAX (602) 497-8173