The documentation and process conversion measures necessary to comply with this document shall be completed by 19 September 2015. INCH-POUND MIL-PRF-19500/379K 19 June 2015 SUPERSEDING MIL-PRF-19500/379J 2 July 2012 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, PNP, SILICON, HIGH-POWER, ENCAPSULATED (THROUGH HOLE), DEVICE TYPES 2N3791 AND 2N3792, QUALITY LEVELS: JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Package outline. See figure 1, (similar to TO-3). 1.3 Maximum ratings. Unless otherwise specified, TC = +25C. 2N3791 2N3792 PT (1) PT (2) TA = +25C TC = +100C W 5.0 5.0 W 85.7 85.7 VCBO VCEO VEBO IB IC TJ and TSTG RJC V dc -60 -80 V dc -60 -80 V dc -7.0 -7.0 A dc -4.0 -4.0 A dc -10 -10 C -65 to +200 -65 to +200 C/W 1.1 1.1 (1) Derate linearly 28.57 mW/C above TA = +25C. (2) See figure 2 for temperature-power derating curves. 1.4 Primary electrical characteristics. Unless otherwise specified, TC = +25C. hFE2 (1) hFE4 (1) VBE(SAT)1 (1) VCE(SAT)1 (1) Cobo |hfe| VCE = -2.0 V dc VCE = -4.0 V dc IC = -5.0 A dc IC = -5.0 A dc VCB = -10 V dc VCE = -10 V dc IC = -3.0 A dc IC = -10 A dc IB = -0.5 A dc IB = -0.5 A dc IE = 0 f = 1 MHz IC = -0.5 A dc f = 1 MHz V dc V dc pF -1.5 -1.0 500 Min 30 120 5.0 4.0 20 Max (1) Pulse (see 4.5.1). Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil/. AMSC N/A FSC 5961 MIL-PRF-19500/379K * * 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein. See 6.5 for PIN construction example and 6.6 for a list of available PINs. 1.5.1 JAN brand and quality level designators. * 1.5.1.1 Encapsulated devices. The quality level designators for encapsulated devices that are applicable for this specification sheet from the lowest to the highest level are as follows: the base quality level "JAN" that uses no modifiers, "JANTX", "JANTXV", and "JANS". * 1.5.2 Device type. The designation system for the device types of transistors covered by this specification sheet are as follows. * 1.5.2.1 First number and first letter symbols. The transistors of this specification sheet use the first number and letter symbols "2N". * 1.5.2.2 Second number symbols. The second number symbols for the transistors covered by this specification sheet are as follows: "3791" and "3792". * 1.5.3 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500. 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. *(Copies of these documents are available online at http://quicksearch.dla.mil) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/379K Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS1 s1 Dimensions Inches Millimeters Min Max Min Max .875 22.22 .270 .350 6.86 8.89 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .050 1.27 .151 .165 3.84 4.19 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 TO-3 Notes 7 7 4,5 4,5 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 2, base; terminal 1, emitter; case, collector. 4. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Collector shall be electrically connected to the case. 7. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-3). 3 MIL-PRF-19500/379K 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and herein. The device package style shall be as follows: TO-3, in accordance with figure 1. * 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.7 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4 MIL-PRF-19500/379K * * 4.3 Screening. 4.3.1 Screening of encapsulated devices (quality levels JANTX, JANTXV, and JANS only). Screening of encapsulated devices shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen Measurement JANS level (1) 3c 9 11 12 13 JANTX and JANTXV levels Thermal impedance, method 3131 of MIL-STD-750. (see 4.3.1.2) Thermal impedance, method 3131 of MIL-STD-750. (see 4.3.1.2) ICES1 and hFE2 ICES1 ICES1 and hFE2 ICES1 = 100 percent of initial value or 5 A dc, whichever is greater. hFE2 = 15 percent of initial value. ICES1 and hFE2; ICES1 = 100 percent of initial value or 10 A dc, whichever is greater. See 4.3.1 See 4.3.1 ICES1 = 100 percent of initial value or 1 A dc, whichever is greater; hFE2 = 15 percent of initial value; subgroups 2 and 3 of table I herein. ICES1 = 100 percent of initial value or 5 A dc, whichever is greater; hFE2 = 15 percent of initial value; subgroup 2 of table I herein. (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +187.5C 12.5C; VCB = -35 5 V dc; TA = room ambient as defined in the general requirements of MIL-STD-750. 4.3.1.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and table I shall comply with the thermal impedance graph in figure 3 (less than or equal to the curve value at the same tH time) and shall be less than the process determined statistical maximum limit as outlined in method 3131. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. * 4.4.2.1 Quality level JANS, table E-VIA of MIL-PRF-19500. * Subgroup Method Conditions B3 2037 Test condition D; all internal wires for each device shall be pulled separately. B4 1037 VCB = -30 V dc; PT = 5 W at TA = +25C 3C, ton = toff = 3 minutes minimum. No heat sink nor forced air on the device shall be permitted. B5 1027 VCB = -30 V dc; TA = +125C 25C for 96 hours; PT = adjusted as required by the chosen TA to give an average lot TJ = +275C. B6 3131 See 4.5.2. 5 MIL-PRF-19500/379K * * * 4.4.2.2 Quality level JAN, JANTX and JANTXV, table E-VIb of MIL-PRF-19500. Subgroup Method Conditions B3 1027 TJ = +187.5C 12.5C; VCB = -35 V dc 5 V dc; TA < +100C. B5 3131 See 4.5.2. B6 1032 TA = +200C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Delta requirements shall be in accordance with the applicable steps of table II herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds, t = 15 s. C6 1026 TJ = +187.5C 12.5C; VCB = -35 V dc; TA +100C. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta requirements shall be in accordance with the applicable steps of table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be -1.0 A dc minimum. b. Collector to emitter voltage magnitude shall be -10 V dc minimum. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25C TR +75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RJC = 1.1. 6 MIL-PRF-19500/379K TABLE I. Group A inspection. Inspection 1/ Symbol MIL-STD-750 Method Conditions Unit Limits Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.1.2 Collector-emitter breakdown voltage 2N3791 2N3792 3011 Bias conditions D, IC = -10 mA dc; pulsed (see 4.5.1) Emitter-base cutoff current 3061 Bias condition D; VEB = -7 V dc IEBO Collector-base cutoff current 2N3791 2N3792 3036 Bias conditions D ICBO Collector-emitter cutoff current 2N3791 2N3792 3041 Collector-emitter cutoff current 2N3791 2N3792 3041 Base-emitter saturated voltage 3066 Test condition A; IC = -5 A dc; IB = -0.5 A dc; pulsed (see 4.5.1) Base-emitter saturated voltage 3066 Collector-emitter saturated voltage C/W ZJX V(BR)CEO -60 -80 V dc V dc -5.0 mA dc -20 -20 A dc A dc -20 -20 A dc A dc -20 -20 A dc A dc VBE(sat)1 -1.5 V dc Test condition A; IC = -10 A dc; IB = -2 A dc; pulsed (see 4.5.1) VBE(sat)2 -3.0 V dc 3071 IC = -5 A dc; IB = -0.5 A dc; pulsed (see 4.5.1) VCE(sat)1 -1.0 V dc Collector-emitter saturated voltage 3071 IC = -10 A dc; IB = -2 A dc; pulsed (see 4.5.1) VCE(sat)2 -2.5 V dc Forward-current transfer ratio 3076 VCE = -2.0 V dc; IC = -1.0 A dc; pulsed (see 4.5.1) VCB = -60 V dc VCB = -80 V dc Bias condition A; VBE = -1.5 V dc ICEX VCE = -60 V dc VCE = -80 V dc Bias condition C ICES1 VCE = -50 V dc VCE = -70 V dc See footnote at end of table. 7 hFE1 50 150 MIL-PRF-19500/379K TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Unit Min Max 120 Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = -2.0 V dc; IC = -3.0 A dc; pulsed (see 4.5.1) hFE2 30 Forward-current transfer ratio 3076 VCE = -2.0 V dc; IC = -5 A dc; pulsed (see 4.5.1) hFE3 10 Forward-current transfer ratio 3076 VCE = -4.0 V dc; IC = -10 A dc; pulsed (see 4.5.1) hFE4 5 Subgroup 3 High temperature operation: Collector to emitter cutoff current 2N3791 2N3792 TA = +150C 3041 ICES2 VCE = -50 V dc VCE = -70 V dc Low temperature operation: Forward-current transfer ratio Bias conditions C -3.4 -3.4 mA dc mA dc 0.2 1.3 1.4 1.0 s s s s TA = -55C 3076 VCE = -2.0 V dc; IC = -3.0 A dc; pulsed (see 4.5.1) hFE5 12 Subgroup 4 Switching parameters: See figure 4 Pulse delay time Pulse rise time Pulse storage time Pulse fall time td tr ts tf Small-signal short-circuit forward-current transfer 3206 VCE = -10 V dc; IC = -0.5 A dc; f = 1 kHz hfe 30 300 Magnitude of small-signal short-circuit, forward-current transfer ratio 3306 VCE = -10 V dc; IC = -0.5 A dc; f = 1 MHz |hfe| 4.0 20 Open circuit output capacitance 3236 VCB = -10 V dc; IE = 0; f = 1 MHz Cobo See footnote at end of table. 8 500 pF MIL-PRF-19500/379K TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Subgroup 5 Safe operating area (continuous dc) 3051 TC = +25C; t 1 s; 1 cycle; (see figure 5) Test 1 VCE = -15 V dc; IC = -10 A dc Test 2 VCE = -40 V dc; IC = -3.75 A dc Test 3 2N3791 2N3792 Safe operating area (clamped inductive) 2N3791 2N3792 VCE = -55 V dc; IC = -0.9 A dc VCE = -65 V dc; IC = -0.9 A dc 3053 Condition C TA = +25C; IC = -10 A dc; VCC = -15 V dc; (see figure 6 and 7) Clamp voltage = -60 V dc Clamp voltage = -80 V dc Subgroups 6 and 7 Not applicable 1/ 2/ For sampling plan, see MIL-PRF-19500. This test required for the following end-point measurements only: Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group B, subgroups 3, 4, and 5 (JANS). Group C, subgroup 2 and 6. Group E, subgroup 1. 9 Limits Min Max Unit MIL-PRF-19500/379K TABLE II. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/ Inspection MIL-STD-750 Step Method 1. 1/ 2/ 3/ 4/ 5/ Symbol Conditions Collector-emitter cutoff current 2N3791 2N3792 3041 Bias condition C 2. Forward-current transfer ratio 3076 VCE = -2.0 V dc; IC = -3.0 A dc; pulsed (see 4.5.1) 3. Collector-emitter (voltage saturated) 3071 IC = -5 A dc; IB = -0.5 A dc; pulsed (see 4.5.1) Limits Min Unit Max ICES1 5/ 100 percent of initial value or 1 A dc; whichever is greater. hFE2 5/ 25 percent change from initial value VCE = -50 V dc VCE = -70 V dc VCE(sat)1 5/ 50 mV dc change from previously measured value The delta measurements for appendix E, table E-VIA (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table II herein, step 3. b. Subgroup 5, see table II herein, steps 1, 2, and 3. The delta measurements for appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, steps 1, 2, and 3. b. Subgroup 6, see table II herein, steps 1 and 2. The delta measurements for appendix E, table E-VII of MIL-PRF-19500 are subgroup 6, see table II herein, steps 1, 2, and 3 (JANS); 1 and 2 (JAN, JANTX, and JANTXV). The delta measurements for appendix E; table E-IX of MIL-PRF-19500 are subgroups 1 and 2, see table II herein, all steps. Devices which exceed the group A limits for this test shall not be shippable but are not considered failures for the test. 10 MIL-PRF-19500/379K TABLE III. Group E inspection (all quality levels) - for qualification and re-qualification only. MIL-STD-750 Inspection Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycle 1051 Hermetic seal 1071 Condition G, 500 cycles. Fine leak Gross leak Electrical measurements See table I, subgroup 2 and table II, all steps. Subgroup 2 Blocking life 45 devices c=0 1048 Electrical measurements +125C; VCB = 80 percent rated (see 1.3); 1,000 hours. See table I, subgroup 2 and table II, all steps. Subgroup 4 Sample size N/A Thermal impedance curves See MIL-PRF-19500. Subgroup 5 Not applicable Subgroup 8 Reverse stability 45 devices c=0 1033 Condition A. 11 MIL-PRF-19500/379K NOTES: 1. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power/current for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperature (TJ +200C) and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curves chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 2. Temperature-power derating graphs, TO-3. 12 MIL-PRF-19500/379K Maximum Thermal Impedance 10 Theta (C/W) 1 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 Time (s) TC = +25C. RJC = 1.1C/W. FIGURE 3. Transient thermal impedance graph. 13 0.1 1 10 MIL-PRF-19500/379K NOTES: 1. The input waveform is supplied by a pulse generator with the following characteristics: tr 2.0 ns, tf 1 s, 10 s PW 100 s, ZOUT = 50, duty cycle 2 percent. 2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr 5 ns, Zin 100 kW, Cin 12 pF. 3. Test circuit A for td and tr; test circuit B for ts and tf. FIGURE 4. Pulse response test circuits. 14 MIL-PRF-19500/379K FIGURE 5. Maximum safe operating graph (dc). 15 MIL-PRF-19500/379K FIGURE 6. Safe operating area for switching between saturation and cutoff (clamped inductive load). 16 MIL-PRF-19500/379K Procedure: 1. With switch S1 closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached. 3. Perform specified end point tests. 4. L = 4 mH, .05W, 20 A. Q | 100 at 1 kHz. (Stanford Miller CK-20 or equivalent.) FIGURE 7. Clamped inductive sweep test circuit. 17 MIL-PRF-19500/379K 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. * 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. The complete PIN (see 1.2 and 6.5) 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://assist.dla.mil. 6.4 Interchangeability information. MIL-PRF-19500/621 is a TO-254 package version of MIL-PRF-19500/379, which is a TO-3 package version. The military 2N7369 contains the same die as the military 2N3792. The MIL-PRF-19500/621 is preferred over the MIL-PRF-19500/379 whenever interchangeability is not a problem. For new design use 2N7369. The 2N3792 is inactive for new design. Transistor types 2N3789 and 2N3790 were deleted by MIL-PRF-19500/379A(ER). The following show the replacement types: Deleted transistors Replaced by 2N3789 2N3791 2N3790 2N3792 18 MIL-PRF-19500/379K * 6.5 PIN construction examples. JANTXV 2N 3791 JAN brand and quality level (see 1.5.1) First number and first letter symbols (see 1.5.2.1) Second number and symbols (see 1.5.2.2) 6.6 List of PINs. PINs for devices of the base quality level JAN2N3791 JAN2N3792 PINs for devices of the "TX" quality level JANTX2N3791 JANTX2N3792 PINs for devices of the "TXV" quality level JANTXV2N3791 JANTXV2N3792 PINs for devices of the "S" quality level JANS2N3791 JANS2N3792 6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2015-063) Review activities: Army - AR, AV, MI, SM Navy - AS, MC Air Force - 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.dla.mil/. 19