SFH 3219
NPN-Silizium-Fototransistor in SMT-Gehäuse mit Linse
Silicon NPN Phototransistor in SMT-Package with lens
Lead (Pb) Free Product - RoHS Compliant
Vorläufige Daten / Preliminary Data
OS-PCN-2010-033-A. To be used for design-in
2010-07-08 1
Wesentliche Merkmale
• TOPLED mit Linse
• Speziell geeignet für Anwendungen im Bereich
von 430 nm bis 1150 nm
• Hohe Linearität
• Für alle Lötverfahren geeignet
• Gehäusegleich mit SFH 4209, SFH 4219,
SFH 4289
Anwendungen
• Miniaturlichtschranken
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Sensorik
Typ
Type
Bestellnummer
Ordering Code
Fotostrom , (Ee=0,1mW/cm2,λ=950nm VCE = 5 V)
Photocurrent
Ipce (μA)
SFH 3219 Q65110A2651 > 63
Features
• TOPLED with lens
• Especially suitable for applications from
430 nm to 1150 nm
• High linearity
• Suitable for all soldering methods
• Same package as SFH 4209, SFH 4219,
SFH 4289
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
• Sensor technology
2010-07-08 2
SFH 3219
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 …+ 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage
VCE 35 V
Kollektorstrom
Collector current
IC15 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
ICS 75 mA
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot 165 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb
RthJA 450 K/W
SFH 3219
2010-07-08 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λSmax 990 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ430 …1150 nm
Bestrahlungsempfindliche Fläche (∅ 220 μm)
Radiant sensitive area
A0.038 mm2
Abmessung der Chipfläche
Dimensions of chip area
L×B
L×W
0.45 ×0.45 mm ×mm
Halbwinkel
Half angle
ϕ± 25 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance
CCE 5.0 pF
Dunkelstrom
Dark current
VCE = 20 V, E=0
ICEO 1 (≤ 50) nA
Fotostrom
Photo current
Ee = 0.1 mW/cm2, VCE = 5 V
IPCE ≥ 63 μA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf7μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 20 μA
Ee = 0.1 mW/cm2
VCEsat 150 mV
2010-07-08 4
SFH 3219
Directional Characteristics
Srel = f (ϕ)
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHF00006
50˚
60˚
70˚
80˚
90˚
100˚
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
SFH 3219
2010-07-08 5
Relative Spectral Sensitivity
Srel = f (λ)
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
0
OHF00207
400
S
rel
λ
nm
%
500 600 700 800 900 1100
10
20
30
40
50
60
70
80
100
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10 0
10 1
10 2
10 3
-25
nA
0 25 50 75 100
˚C
Photocurrent
IPCE = f (VCE), Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
V
OHF00007
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
0.1
2
cm
mW
0.2
2
cm
mW
0.4
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0
V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
Photocurrent
IPCE /IPCE25° = f (TA), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
2010-07-08 6
SFH 3219
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package TOPLED® mit Linse (P-LCC-2) / TOPLED® with lens (P-LCC-2)
Anschlussbelegung
pin configuration
1 = Emitter / emitter
2 = Kollektor / collector
Farbe
Color
weiß
white
3.5 (0.138) max.
ø2.55 (0.100)
0.13 (0.005)
0.18 (0.007)
0.1 (0.004) (typ.)
marking
Package
1.1 (0.043)
0.5 (0.020)
2.6 (0.102)
3.4 (0.134)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
3.0 (0.118)
3.7 (0.146)
3.3 (0.130)
GEOY6956
0.4 (0.016)
0.6 (0.024)
0.9 (0.035)
0.7 (0.028)
1.7 (0.067)
2.1 (0.083)
ø2.60 (0.102)
2
1
SFH 3219
2010-07-08 7
Empfohlenes Lötpaddesign
Recommended Solderpad Design
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD 020-D.01)
Reflow Soldering Profile for lead free soldering (acc. to J-STD 020-D.01)
OHLPY970
4.5 (0.177)
2.6 (0.102)
1.5 (0.059)
Cu-area > 16 mm
Cu-Fläche > 16 mm
2
2
Solder resist
Lötstopplack
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
Padgeometrie für
improved heat dissipation
verbesserte Wärmeableitung
Paddesign for
0
0s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
S
t
t
P
t
T
p
240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
2010-07-08 8
SFH 3219
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Pb-Free (SnAgCu) Assembly
Profile Feature Recommendation Max. Ratings
Ramp-up Rate to Preheat*)
25°C to 150°C
2°C / sec 3°C / sec
Time ts from TSmin to TSmax
(150°C to 200°C
100s min. 60sec max. 120sec
Ramp-up Rate to Peak*)
TSmax to TP
2°C / sec 3°C / sec
Liquidus Temperture TL217°C
Time tL above TL80sec max. 100sec
Peak Temperature TP245°C max. 250°C
Time tP within 5°C of the specified peak
temperature TP - 5K
20sec min. 10sec max. 30sec
Ramp-down Rate*
TP to 100°C
3°C / sec 4°C / sec maximum
Time 25°C to Peak temperature max. 8 min.
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation ΔT/Δt: Δt max. 5 sec; fulfillment for the whole T-range
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 3219
2010-07-08 9
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
