2SK3818
Rev.0 I Page 1 of 4 I www.onsemi.com
Ordering number : ENN8056
2SK3818 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
•Motor drive, DC / DC converter.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID74 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 296 A
Allowable Power Dissipation PD1.65 W
Tc=25°C75W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Enargy (Single Pulse) *1 EAS 410 mJ
Avalanche Current *2 IAV 74 A
Note : *1 VDD=20V, L=100µH, IAV=74A
*2 L≤100µH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=37A 27 45 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=37A, VGS=10V 10 13 mΩ
RDS(on)2 ID=37A, VGS=4V 13 18 mΩ
Marking : K3818 Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SK3818/D
2SK3818
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 5250 pF
Output Capacitance Coss VDS=20V, f=1MHz 780 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 525 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 38 ns
Rise T ime trSee specified Test Circuit. 315 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 370 ns
Fall T ime tfSee specified Test Circuit. 310 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=74A 100 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=74A 18 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=74A 16 nC
Diode Forward Voltage VSD IS=74A, VGS=0 1.13 1.5 V
Package Dimensions Package Dimensions
unit : mm unit : mm
2093A 2090A
Switching Time Test Circuit Unclamped Inductive Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
10.2
20.9 11.5
9.4
0.8
1.6
1.2
0.9
11.0 8.8
4.5 1.3
0.4
2.55
2.55
2.7
123
PW=10µs
D.C.
≤
1%
P.G 50Ω
G
S
D
ID=37A
RL=0.81Ω
VDD=30V
VOUT
2SK3818
VIN
10V
0V
VIN
50Ω
≥50Ω
RG DUT
VDD
L
15V
0V
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
10.2
1.2
2.55
2.552.55
2.55
4.5
0 to 0.3
0.4
1.3
9.93.0
2.7
1.35 8.8
1.4
1.5max
0.8
0.8
123
2SK3818
Rev.0 I Page 3 of 4 I www.onsemi.com
IT07836 IT07837
IT07834 IT07835
--50 --25 150
03010 15 20 255
1000
10000
IT07841
IT07839
IT07838
0.1 1.0
23 57
3
10
1.0
1.41.20.4 0.80.6 1.00.2
0.01
0.1
5
7
3
2
1.0
5
7
3
2
10
5
7
3
2
100
5
7
3
2
7
5
7
5
2
3
5
7
100
2
3
2
10
23 57 3 572100
3456789210
0
20
30
25
10
15
5
0
20
30
25
5
10
15
0255075100 125
7
5
3
7
5
ID=37A
Tc=
75
°C
25
°C
--25°C
ID=37A, VGS=4V
ID=37A, VGS=10V
Tc=
--25°C
75°C
25
°
C
VDS=10V
Tc=
75
°C
25
°C
--
25°C
VGS=0
f=1MHz
Coss
Ciss
Crss
IT07840
0.1 23 1.0
57 2 3 57 2 3 57
10010
100
1000
2
3
5
7
2
3
5
7
td(off)
tf
td(on)
tr
VDD=30V
VGS=10V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
y
fs -- IDIF -- VSD
Ciss, Coss, Crss -- VDS
SW Time -- ID
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
Case Temperature, Tc -- °C
0.2 0.4 0.6 0.8 1.0 2.01.4 1.6 1.81.20
0
10
20
30
70
80
90
60
50
40
0
10
20
30
70
80
90
60
50
40
1.51.00.5 2.0 2.5 3.00 4.54.03.5
VGS=3V
8V
10V
Tc=25°C
25°C
--25°C
25°C
Tc=
--25
°
C
75
°
C
Tc=
75
°
C
VDS=10V
4V
6V
2SK3818
Rev.0 I Page 4 of 4 I www.onsemi.com
IT07811
IT07843
0
020 40 60 80 100 120
1.65
140 160
2.0
1.5
1.0
0.5
0.1
1.0
10
100
2
3
5
3
2
5
7
7
2
3
5
7
2
3
5
7
23 57 23 57 23 57
1.00.1 10 100
IDP=296A
ID=74A
100µs
1ms
10ms
100ms
DC operation
10µs
Operation in
this area is
limited by RDS(on).
IT07842
01020 4030 50 60 10070 80 90
0
2
4
6
8
9
1
3
5
7
10 VDS=30V
ID=74A
IT07844
0
020 40 60 80 100 120
90
60
80
70
75
50
140 160
40
30
20
10
A S O
PD -- Ta PD -- Tc
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Amibient Tamperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Tamperature, Tc -- °C
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
Tc=25°C
Single pulse
Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V
2SK3818/D
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