NTE2341(NPN) & NTE2342 (PNP)
Silicon Complementary Transistors
Darlington Driver
Description:
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
TO92 type package designed for general purpose, low frequency applications and as relay drivers.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, IC1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, Ptot
TA = +25°C 800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C, Note 1 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Ambient, RthJA 156K/W. . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 125K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
x 10mm.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–EmitterBreakdown Voltage V(BR)CEO IC = 50mA, IB = 0 80 – – V
Collector–BaseBreakdown Voltage V(BR)CBO IC = 100µA, IB = 0 100 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 – – V
Collector Cutoff Current ICEO VCE = 40V, IB = 0 – – 500 nA
ICBO VCB = 100V, IE = 0 – – 100 nA
Emitter Cutoff Current IEBO VCE = 4V, IC = 0 – – 100 nA
DC Current Gain hFE IC = 150mA, VCE = 10V 1000 – –
IC = 500mA, VCE = 10V 2000 – –
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA – – 1.3 V
IC = 1A, IB = 1mA – – 1.8 V
Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 1mA, Note 3 – – 2.2 V
Transition Frequency fTIC = 500mA, VCE = 5V,
f = 100MHz –200 –MHz
BC
E
BC
E
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
NTE2341
(NPN)
NTE2342
(PNP)
