0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
0.50 (12.7)
MIN
0.255 (6.48)
Collector
(Case)
Base
Emitter
Ø0.100 (2.54)
0.020 (0.51) 3X
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
PACKAGE DIMENSIONS FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 45 V
Emitter-Base Voltage VEBO 5V
Power Dissipation (TA= 25°C)(1) PD300 mW
Power Dissipation (TC= 25°C)(2) PD600 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
DESCRIPTION
• The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
E
C
B
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300279 3/13/01 1 OF 4 www.fairchildsemi.com
.01
.01
0.1
1.0
10
0.1 1.0 10 100 0.1
.01
0.1
1.0
10
1.0 10 100
VCE - COLLECTOR TO EMITTER VOLTAGE
IL - NORMALIZED LIGHT CURRENT
IL - NORMALIZED LIGHT CURRENT
Fig. 1 Light Current vs. Collector to Emitter Voltage
H - TOTAL IRRADIANCE IN mW/cm2
Fig. 2 Normalized Light Current vs. Radiation
Ee = 20 mW/cm2
10 mW/cm2
5 mW/cm2
2 mW/cm2
1 mW/cm2
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
www.fairchildsemi.com 2 OF 4 3/13/01 DS300279
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BVCEO 45 — — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BVEBO 5.0 — — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 45 — — V
Collector-Emitter Leakage VCE = 10 V, Ee = 0 ICEO — — 100 nA
Reception Angle at 1/2 Sensitivity 0— ±10 — Deg.
On-State Collector Current BPW36 Ee = 0.5 mW/cm2
IC(ON) 1.0 — — mA
VCE = 5 V(7)
On-State Collector Current BPW37 Ee = 0.5 mW/cm2
IC(ON) 0.5 — — mA
VCE = 5 V(7)
Turn-On Time IC= 2 mA, VCC = 10 V ton —8—µs
RL= 100 1
Turn-Off Time IC= 2 mA, VCC = 10 V toff —7—µs
RL= 100 1
Saturation Voltage IC= 1.0 mA, Ee = 3.0 mW/cm2VCE(SAT) — — 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
TYPICAL PERFORMANCE CURVES
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
0.1
0.1
1.0
10.0
102
103
104
105
106
1.0
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.0
10
IL - NORMALIZED LIGHT CURRENTIL - NORMALIZED DARK CURRENT
SWITCHING TIME (µs)IL - NORMALIZED LIGHT CURRENT
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
TA = 25˚C
Normalized to:
ID @ 25˚C
VCEO = 10 V
Normalized to:
CQX14 Input = 10 mA
VCEO = 10 V
IL = 100 µA
TA = 25˚C
Normalized to:
VCE = 10 V
IL = 2 mA
tON = tOFF = 5 µs
RL = 100 1
RL = 100 1
RL = 10 1
RL = 1 k1
-50 0 50 100 150 0.1 1.0 10 100
TA - TEMPERATURE (˚C) IL - OUTPUT CURRENT (mA)
Fig. 3 Normalized Light Current vs. Temperature Fig. 4 Switching Times vs. Output Current
0 25 50 75 100 125 150
55 35 15 25 45 65 85 1055
TA - TEMPERATURE (˚C) TA - TEMPERATURE (˚C)
Fig. 5 Dark Current vs. Temperature Fig. 6 Normalized Light Current vs. Temperature
Both Emitter (CQX14) and Detector
(BPW36 or BPW37) at Same Temperature
CQX14 BPW36 OR
BPW37
DS300279 3/13/01 3 OF 4 www.fairchildsemi.com
TYPICAL PERFORMANCE CURVES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
www.fairchildsemi.com 4 OF 4 3/13/01 DS300279
