2N527 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)30a V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (oC)100o I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.72 h(FE) Max. Current gain.121 @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)1.0 h(fe) Min. SS Current gain.60 @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)5.0 @Freq. (Hz) (Test Condition)270 f(T) Min. (Hz) Transition Freq1.5M| @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)5.0 C(obo) (Max) (F)40p @V(CB) (V) (Test Condition)5.0