Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
APPLICATION
Electric fan, air cleaner, other general purpose control applications
BCR08AM
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=56°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
0.8
8
0.26
1
0.1
6
0.5
–40 ~ +125
–40 ~ +125
0.23
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
✽1.Gate open.
•IT (RMS) .....................................................................0.8A
•VDRM .......................................................................600V
•IRGT I, IRGT III ............................................................5mA
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
12
600
720
TYPE
NAME
VOLTAGE
CLASS
➁
➀➂
➀
➁
➂
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
φ5.0 MAX.
5.0 MAX.
12.5 MIN.
3.9 MAX.
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ0.7
➀➂➁
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
Mar. 2002
✽2.Measurment using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Symbol
IDRM
VTM
VRGT I
VRGT III
IRGT I
IRGT III
VGD
Rth (j-c)
(dv/dt)c
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.2A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C
Unit
mA
V
V
V
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
ELECTRICAL CHARACTERISTICS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Limits
Min.
—
—
—
—
—
—
0.1
—
0.5
Max.
1.0
2.0
2.0
2.0
5
5
—
60
—
II
III
II
III
PERFORMANCE CURVES
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
10023 5710
1
4
2
23 5710
2
6
8
10
3
1
5
7
9
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
101
7
5
3
2
100
7
5
3
2
10–1
Tc = 25°C
MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT
Test conditions Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–0.4A/ms
3. Peak off-state voltage
VD=400V
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
2310–1 5710
023 5710
123 5710
2
22310257357 10
47105
10323 5
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
101
7
5
3
2
3
2
102
7
5
3
60 100 140
–40 0 40 80 120
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
–40 0 40 80 120
160
120
80
40
140
100
60
20
01.00 0.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8
2.0
1.6
1.2
0.8
0.4
1.8
1.4
1.0
0.6
0.2
01.40 0.40.2 0.6 0.8 1.0 1.2
100
23310
15757 10
223 5710
3
3
2
101
7
5
3
2
7
5
7
5
3
3
2
10–1
VGD = 0.1V
PGM = 1W
VGM = 6V
VGT
IGM =
0.5A
PG(AV) =
0.1W
IRGT I
IRGT III
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TO AMBIENT
JUNCTION TO CASE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
Mar. 2002
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
–40 0 40 80 120
10
1
160
120
100
60
20
00 0.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8 1.0
40
80
140
160–40 0 40 80 120
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
2310
0
5710
1
23 5710
2
23 5710
3
120
0
20
40
60
80
100
140
160
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
T
2
+
, G
–
TYPICAL EXAMPLE
DISTRIBUTION
T
2
–
, G
–
TYPICAL EXAMPLE
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
NO FINS
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
TYPICAL EXAMPLE
Tj = 125°C
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
10
1
7
5
3
2
10
–1
6Ω6Ω
6V 6V
R
G
R
G
A
V
A
V
TEST PROCEDURE II TEST PROCEDURE III
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
I
RGT I
I
RGT III
TYPICAL EXAMPLE
CONDITIONS
V
D
= 200V
I
T
= 1A
τ = 500µs
T
j
= 125°C
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
