Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 27.4
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 17
IDM Pulsed Drain Current À110
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á500 mJ
IAR Avalanche Current À27.4 A
EAR Repetitive Avalanche Energy À15 mJ
dv/dt Peak Diode Recovery dv/dt Â5.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
°C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
10/25/11
www.irf.com 1
TO-254AA
Product Summary
Part Number RDS(on) ID
IRFM250 0.100 27.4A
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectrically Isolated
nDynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFM250
JANTX2N7225
JANTXV2N7225
REF:MIL-PRF-19500/592
200V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
Features:
PD-90554F
IRFM250
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 1.0mA
BVDSS/TJTemperature Coefficient of Breakdown 0.28 V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State 0.100 VGS = 10V, ID = 17A
Resistance 0.105 VGS = 10V, ID = 27.4A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 9.0 S VDS = 15V, IDS = 17A Ã
IDSS Zero Gate Voltage Drain Current 25 VDS= 160V ,VGS = 0V
250 VDS = 160V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V
QgTotal Gate Charge 115 VGS =10V, ID = 27.4A
Qgs Gate-to-Source Charge 22 nC VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge 60
td(on) Turn-On Delay Time 35 VDD = 100V, ID = 27.4A,
trRise Time 190 VGS =10V, RG = 2.35
td(off) Turn-Off Delay Time 170
tfFall Time 130
LS + LDTotal Inductance 6.8
Ciss Input Capacitance 3500 VGS = 0V, VDS = 25V
Coss Output Capacitance 700 pF f = 1.0MHz
Crss Reverse Transfer Capacitance 110
CDC Drain-to-Case Capacitance 12
nA
Ã
nH
ns
µA
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case 0.83
RthJCS Case-to-Sink 0.21
RthJA Junction-to-Ambient 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) 27.4
ISM Pulse Source Current (Body Diode) À 110
VSD Diode Forward Voltage 1.9 V Tj = 25°C, IS = 27.4A, VGS = 0V Ã
trr Reverse Recovery Time 950 ns Tj = 25°C, IF = 27.4A, di/dt 100A/µs
QRR Reverse Recovery Charge 9.0 µC VDD 50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from package)
www.irf.com 3
IRFM250
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFM250
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
www.irf.com 5
IRFM250
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFM250
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
1
0
.
www.irf.com 7
IRFM250
 ISD 27.4A, di/dt 190A/µs,
VDD 200V, TJ 150°C
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 1.3mH
Peak IL = 27.4A, VGS = 10V
Footnotes:
Case Outline and Dimensions — TO-254AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2011
à Pulse width 300 µs; Duty Cycle 2%
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C14.48 [.570]
12.95 [.510]
3X
0.36 [.014] B A
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
123
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
NOT E S :
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.