TLP523,TLP523-2,TLP523-4
1 2019-06-24
© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP523, TLP523-2, TLP523-4
Programmable Controllers
DC-Output Module
Solid State Relay
The TOSHIBA TLP523, -2 and -4 consist of an infrared emitting diode
coupled with a silicon, Darlington connected, phototransistor which has an
integral base-emitter resistor to optimize switching speed and elevated
temperature characteristics.
The TLP523-2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523-4 provides four isolated channels per package.
• Current transfer ratio: 500 % (min) (IF = 1 mA)
• Isolation voltage: 2500 Vrms (min)
• Collector-emitter voltage: 55 V (min)
• Leakage current: 10 μA (max) (Ta = 85°C)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized :CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
11-5B2
Weight: 0.26 g (typ.)
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
TOSHIBA
11-20A3
Weight: 1.1 g (typ.)
Unit: mm
Start of commercial production
1984-08
TLP523,TLP523-2,TLP523-4
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Toshiba Electronic Devices & Storage Corporation
Pin Configurations (top view)
1
3
2
TLP523
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
7
6
8
TLP523-2
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
5
11
10
12
9
15
14
16
TLP523-4
4
13
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
TLP523,TLP523-2,TLP523-4
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol
Rating
Unit
TLP523
TLP523-2
TLP523-4
LED
Forward current IF 60 50 mA
Forward current derating ΔIF/°C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA/°C
Pulse forward current
(100 μs pulse, 100 pps) IFP 1 A
Diode power dissipation
PD 70 60 mW
Diode power dissipation derating ΔPD/°C -0.8 (Ta ≥ 39°C) -0.6 (Ta ≥ 25°C) mW/°C
Reverse voltage VR 5 V
Detector
Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 0.3 V
Collector current IC 150 mA
Collector power dissipation
(1 circuit) PC 150 100 mW
Collector power dissipation derating
(1 circuit) (Ta ≥ 25°C)) ΔPC/°C -1.5 -1.0 mW/°C
Operating temperature range Topr -55 to 100 °C
Storage temperature range Tstg -55 to 125 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total power dissipation (1 circuit) PT 250 150 mW
Total power dissipation derating
(Ta ≥ 25°C) (1 circuit) ΔPT/°C -2.5 -1.5 mW/°C
Isolation voltage
(AC, 60 s, R.H.≤ 60 %) (Note 1) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 20 mA
Collector current Ic ― ― 40 mA
Operating temperature range Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP523,TLP523-2,TLP523-4
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Detector
Collector-emitter breakdown voltage V(BR) CEO IC = 1 mA 55 — — V
Collector dark current ICEO
IF = 0 mA, VCE = 24 V — 10 200 nA
IF = 0 mA, VCE = 24 V, Ta = 85 °C — 0.5 10 μA
Capacitance collector to emitter CCE V = 0 V, f = 1 MHz — 10 — pF
Coupled
Current transfer ratio IC/IF IF = 1 mA, VCE = 1 V 500 2000 — %
Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IF = 10 mA — — 1 V
Capacitance input to output CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H.≤ 60 % 5×1010
1014 — Ω
Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Turn-on time tON VCC = 10 V, RL = 180 Ω (Fig. 1)
IF = 16 mA
— 3 — μs
Turn-off time tOFF — 80 — μs
Fig. 1: Switching Time Test Circuit
VCC
VCE
I
F
RL
I
F
I
F
V
CE
tON
9V
1V
tOFF
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Toshiba Electronic Devices & Storage Corporation
I
F – Ta
Allowable forward current
IF (mA)
Ambient temperature Ta (°C)
100
80
-20
0
60
40
20
120 100
80 60
20 40 0
TLP523
TLP523 -2, -4
Forward voltage VF (V)
I
F – VF
Forward current I
F
(mA)
100
50
0.6
0.3
5
0.5
30
3
1
10
0.1
0.8 1.0 1.2 1.4 1.6 1.8
Ta = 25°C
Δ
VF /
Δ
Ta – IF
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
-3.2
-2.0
-2.4
-2.8
-0.4
-1.6
-1.2
-0.8
Forward current I
F
(mA)
0.1 0.3 1 3 10 30
I
FP
– V
FP
Pulse forward current I
FP
(mA)
Pulse forward voltage VFP (V)
1000
500
0.6
50
300
30
10
100
1 1.0 1.4 1.8 2.2 2.6
3
5
3
Pulse width ≤ 10μs
Repetitive frequency = 100Hz
Ta = 25°C
I
FP – DR
Pulse forward current IFP (mA)
Duty cycle patio DR
5000
3000
10-3
10
1000
500
30
100
50
300
10-1 10-2 100
Pulse width ≤ 100μs
Ta = 25°C
P
C – Ta
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
160
-20
0
120
80
40
120 100
80 60
20 40 0
200
TLP523
TLP523
-2, -4
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
I
C
– I
F
Collector current I
C
(mA)
Forward current I
F
(mA)
300
100
50
30
10
5
3
1
0.3 1 3 10 30
VCE = 1V
Ta = 25°C
Sample 1
2
3
I
C – IF
Collector current I
C (mA)
Forward current IF (mA)
300
100
50
30
10
5
3
1
0.3 1 3 10 30
VCE = 1.2V
Ta = 25°C
Sample 1
2
3
100
80
60
40
0
20
-20
-40
1.0
0.8
0
0.6
0.4
0.2
1.2
1.6
1.4
Ambient temperature Ta (°C)
V
CE(sat)
– Ta
Collector-emitter saturation voltage V
CE
(sat) (V)
Test condition
A : IC=100mA, IF=10mA
B : IC=50mA, IF=10mA
C : IC=10mA, IF=1mA
D : IC=1mA, IF=0.5mA
Test condition A
B
C
D
120
140
Ambient temperature Ta (°C)
I
C
– T
a
Collector current I
C
(mA)
100
80
60
40
0
20
-20
-40
100
80
0
60
40
20
Test condition
A : IF =10mA, VCE=1.2V
B : IF =10mA, VCE=1.0V
C : IF =2mA, VCE=1.2V
D : IF =2mA, VCE=1.0V
E : IF =1mA, VCE=1.2V
F : IF =1mA, VCE=1.0V
Test condition
B
C
D
A
E
F
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP523,TLP523-2,TLP523-4
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Toshiba Electronic Devices & Storage Corporation
Collector-emitter voltage VCE (V)
I
C – VCE
Collector current IC (mA)
2.0
0.4
0
1.2
2.4
3.2
0.5
0.3
0.1
1.6
0.8
2.8
Ta = 25°C
300
1
100
50
3
10
5
30
P
C Max.
0.5mA
1mA
2mA
IF = 10mA
Safe Operating Area
Collector current I
C
(mA)
Collector-emitter voltage VCE (V)
500
1
100
50
3
10
5
30
300
3
0.5
1
10
30
* Single
nonrepetitive
pulse
Ta=25°C
Ta=60°C
DC operating Ta=25°C
100ms*
100ms*
1s*
1s*
10ms*
10ms*
I
C
– V
CE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
500
300
3
0.3
0.1
1
100
50
3
10
5
30
1
10
30
0.5
0.3
0.1
IF = 1mA
Ta = 25°C
Sample 1
2
3
PC Max.
Switching Time
Switching time (μs)
Load resistance RL (Ω)
500
1
100
50
3
10
5
30
300
30
100
1k
3k
10k
300
tOFF
tON
90%
10%
IF
VOUT
VOUT
RL
Ta = 25°C
V
CC = 10V
tOFF(IF=10mA)
tOFF(IF=1mA)
tON(IF=1mA)
tON(IF=10mA)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP523,TLP523-2,TLP523-4
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Toshiba Electronic Devices & Storage Corporation
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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