_ Bsc. Dd - g23sbos 004115 2 MESIEG - JP _ 30 Ut*t LiLo PNP Silicon Transistors BC 177 BC 178 STEMENS AKTIENGESELLSCHAF BC 179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use in AF input and driver stages. Type | Ordering code BC 1771) 062702-c684 ous 4 A aT BC177A Q62702-C141 \ 2 )7 @ BC 177B Q62702-C142 ay AAT OB BC 1781) Q62702-C685 | it , TF BC 178A Q62702-C153 3521 12 44 A BC 178B Q62702-C154 2ahel BC 178C Q62702-C155 Approx. weight 0.33 g Oimenston in mm BC 1791) Q62702-C686 BC 179B Q62702-C303 BC 179C Q62702-C145 Maximum ratings (Tamp = 25C) BC 177 BC 178 BC 179 Collector-emitter voltage -Vces 50 30 25 Vv Collector-emitter voltage -Vceq | 45 25 20 Vv Emitter-base voltage Veso | 5 5 5 Vv Collector current Ib 100 100 50 mA Collector peak current ~lon 200 200 - mA Base current -Ig 50 50 5 mA Base peak current igm 100 100 ~ mA Junction temperature T; 175 175 175 C Storage temperature range Totg -5 to +125 c Total power dissipation Prot | 300 | 300 | 300 mw Thermal! resistance Junction to ambient air Rina <500 500 =500 K/W Junction to case Rinse $200 $200 200 K/W 1) If the order does not include any exact indication of the currant amplification group desired, a transistor of a current amplification group just available from stock will be delivered. _ oo 161 1_soaL B-04 at Ahem NL we a at Set otD BC 177 BC 178 Static characteristics (T,.,5 = 25C) The transistors are grouped according to the DC current gain hee and are marked with A, B,C, At Voce = 5 V and the collector currents indicated below, the following static characteristics BC 179 apply: heg group A B Cc Type BC 177 BC 177 - BC 178 BC 178 BC 178 - BC 179 BC 179 wIc hee hee hee mA Ic/Tg Ic/Ig Ic/Ig 0.01 90 150 270 2 170 (120 to 220) 290 (180 to 460) 500 (380 to 800) 100%) 1203) 2003) 400) Static characteristics (Tap = 25C) Type BC 177, BC 178, BC 179 Voce ~Ic ~Ih Vee Voesat Vaesat Vv mA mA Vv Vv Vv 5 0.1 - 0.57 - - 5 2 - 0.62 (0.55 to 0.7) | - - 5 100 - 0.8 ~ - - 10 0.5 - 0.1 (<0.2)1) 0.7 (<0.8) - 1009 | 5 - 0.2 (<0,6)1)9} 0.85 (<1)3) 5 10 - - 0.2 0.6)2) - {pc177, | 8c178 | 8C179 | Collector cutoff current (-Vegs = 20 V) Ices 2(<100) | 2(<100) | 2(<100) | nA Collector cutoff current : (~Vees = 20 V; Tamb = 125C) =I ees <4 <4 <4 pA Emitter-base breakdown voltage (Jeg = 10 pA) Viernjeso} >5 >5 > Vv Collector-emitter breakdown voltage (Jeg = 2 mA) -Visryceo| >45 >25 >z0O Vv Collector-emitter breakdown voltage (Ice =10 pA) Vierices >60 >30 >25 Vv 1) The transistor is overloaded to such an extent that the DC current gain decreases to hFE = 20. 2) Ic = 10 mA for the characteristics, which passes at constant basa current the point [c = 11 mA; Vcg =1V. 3) These vatues do not apply to BC 179. 162 1592. B=05 feat shin prk He UN MabatOae howe dee vee Loe phe eT25C > MM 8235605 GOOWDL7 O MESIEG FLV SIEMENS AKTIENGESELLSCHAF BC 177 BC 178 BC 179 Dynamic charactoristics (Temp = 25C) | BC177_ | BC178 | BC179 | Transition frequency (-le= 10 mA; Voce = 5V; f= 60 MHz) fr 130 130 130 MHz Collector-base capacitance (Vogo = 10 V; f= 1 MHz) Ccgo | 4.5 (<7) 4.5 (<7) 4.5 (<7) pF Noise figure (Ig = 0.2 mA; Vce = 5 V} Rg = 2kQ; Af= 200 Hz;f=1kHz NF <10 <10 <4 dB f = 30 t0 15000 Hz NF - - 2(<4) dB Dynamic characteristics (Tamp = 25C) Ig = 2 MA; Veg = 5 Vif = 1kHZ hee group -| A B c Type BC 177 BC 177 - BC 178 BC 178 BC 178 - BC 179 BC 179 . hye 2.7 (1.6 to 4.5) 4.5 (3.2 to 8.5) 8.7 (6 to 15) kQ hize 1.5 2 3 10-4 hate 220 330 600 - ho 18 (<30) 35 (<60) 60 (<110) uS Total perm. power dissipation versus temperature Permissible puise load Prose = f(T): Rin = parameter K. tauc =f (); v= parameter WwW 8C177, 8C 178, BC178 Ww BC 177, 8C 178, BC 179 04 0 5 Ane Prot | 08 10? 0,2 01 Ve ft coe 0 100 200C OTe ot wt 08 w? wl 0? ols t st san eae 163 1593 B-06me a | 25 D MM 8235605 0004118 2 mSIEG ~29-/7 . 4118 STEMENS AKTIENGESELLSCHAF BC 177 BC 178 BC 179 Collector current Ic =f (Vee) OC current gain ~Vee =5V fre =f lc) Vee = 5 V mh 8C 177, BC 178, BC 179 BC 177, BC 178, BC 179 0 a Are h | tot 5 eomeAyerage values WE __ __Scamaring tit at Tamb= 5 : wi 0 Of 10V P_ Vee Callctor cutoff current Input characteristic; fg = f(Ve_} versus temperature Icgo = f (Tema) Veg = 5 V: Tamb = 26C {for max. permissible reverse voltage) uA 8C177, BC 178, BC 179 mA BC 177, BC 178, 8C 179 0 G 50 100 150C Fanb aon kat nla Mahe eta on aamenertetion . 2e5c D = 6235605 0004434 4 mESIEG T- 249-9 aoa ae SIEMENS AKTIENGESELLSCHAF BC 177 BC 178 BC 179 Collector-ernitter saturation vottaga Veesat = f Uch: hee = 20 mA BC 177, BC 178, BC 179 aA BC 177, BC 178, BC 179 10 v 25C 4 3 0 Average values 5 Scattering limit at 0 Ho O2 08 OF OAV > Vorsat h-parameter vs. collector current Vee = 5 V; Tamb = 25C he (le) He Rie 2 may 7! ed BC 177, 8C 178, BC 179 1595 B-08 0 05 10V Ve sat fr-parameter vs. collector-emitter vattage ig = 2 MA; Tamp = 25 a (Voce) 8 al Ay (Vers BV) F (Vee) BC 177, BC 178, BC179 ap He: 18 10 05 0 0 20 30V, Noe 165 syd aay are eet? Oe Aeon on gE semen vane anlar a Weal ae25C >) MM 8235605 COO4L20 O MMSIEG _. - ""> 04120 OD SIEMENS AKTIENGESELLSCHAF TRI-/7 -Ba178 BC 179 Output characteristics Jp = f (Voce) Output characteristics fc = { (Vee) J, = parameter Ig = parameter mA 8C177 mA 68C 178, BC 179 100 100 t Ig 4 80 80 60 60 0 40 20 20 a 80V , 0 Vee Vee Output characteristics Ig = f (Vee) Output characteristics Ic = f (Vee) Vos = parameter Jz = parameter wa BC179 i A BC179 7000 1000 - lg 800 800 600 600 400 400 200 200 0 0 ~ Ve 16g 1596 B-09 0 1 2 3 4 V > Ne tom_25C D MM 8235605 OO0412) 2 MESIEG =~ 29-/77 SIEMENS AKTIENGESELLSCHAF BC 177 BC 178 BC 179 Collector base capacitance Cong =flVceno) i Transition frequency Emitter base capacitance Cego=t(Veno) 3 fr =f Uli (Tam = 26C} f=TMH2; Tan = 25C i Miz 80177, BC178, BC 179 oF 80-177, BC178, BC179 ; 0 5 : CEEQ a 5 Sogo : ft 4 10 0 . 5 5 10" 0 5 10 5 1'V ' ~" Vouo+Veso Noise figure NF =f (Voce) Noise figure NF = (#) Iq = 0.2 mA; Ry = 2 KO: f= ThHe Fg = 2KQ; Veg = BV; ig = 0.2 mA Temb = 26C Tan = 25C 6B BC179 4B BC179 20 MF 16 ot swooos wm 5 tv 0 10 10 40) 10kHz ial Vee ~ f wore a 167 1597 B-10mm fF 25 D M 8235605 goo41e2 4 MESIEG w9 29-/7 7 { SIEMENS AKTIENGESELLSCHAF iC 04122 D BC 179 Noise figure NF = f (/c) Noise figure NF = f (fc) ; Veg = 6 Vf = 120 KHz: Tam = 26C Veg = 6 Vi f= 1kHz; Tey = 26C dB Bc179 d8 6C179 20 20 AF WF at) 6 10 10 5 9 4 4 1 0 1 q 3 2 =1 Qa 1 : 10 10 Ww 10 10mA 10 10 10 1 TOMA % 168 ms - 1598 B-11 lg Noise figura NF =f (Ic) Vee = BV; f= 10 KHZ; Tomy = 25C dB BC 179 we? tot? ta rly