MMBT6427LT1G, SMMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318 STYLE 6 MAXIMUM RATINGS Symbol Value Unit Collector -Emitter Voltage Rating VCEO 40 Vdc Collector -Base Voltage VCBO 40 Vdc Emitter -Base Voltage VEBO 12 Vdc IC 500 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C Collector Current - Continuous COLLECTOR 3 BASE 1 EMITTER 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C PD Thermal Resistance, Junction-to-Ambient RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C PD Thermal Resistance, Junction-to-Ambient RqJA 417 C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature MARKING DIAGRAM 1V M G G 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1V = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT6427LT1G SOT-23 3,000 Tape & Reel (Pb-Free) SMMBT6427LT1G SOT-23 3,000 Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 4 1 Publication Order Number: MMBT6427LT1/D MMBT6427LT1G, SMMBT6427LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 - 40 - 12 - - 1.0 - 50 - 50 10,000 20,000 14,000 100,000 200,000 140,000 - - 1.2 1.5 - 2.0 - 1.75 - 7.0 - 15 1.3 - - 10 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IC = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 25 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) hFE VCE(sat)(3) Collector -Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) Base -Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) Base -Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) VBE(on) - Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Current Gain - High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) |hfe| Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) NF 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 pF pF Vdc dB MMBT6427LT1G, SMMBT6427LT1G NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 500 2.0 BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 0.02 10 20 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 50 100 200 50k 100k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 MMBT6427LT1G, SMMBT6427LT1G SMALL-SIGNAL CHARACTERISTICS 20 |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 TJ = 25C C, CAPACITANCE (pF) 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200k hFE, DC CURRENT GAIN TJ = 125C 25C 30k 20k 10k 7.0k 5.0k -55C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 1.4 V, VOLTAGE (VOLTS) 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) 100 200 500 1000 Figure 9. Collector Saturation Region 1.6 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 10 2.0 3.0 Figure 8. DC Current Gain 5.0 7.0 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100k 70k 50k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RqVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 qVB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBT6427LT1G, SMMBT6427LT1G 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZqJC(t) = r(t) RqJCTJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) RqJATJ(pk) - TA = P(pk) ZqJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 Figure 12. Thermal Response FIGURE A tP PP PP t1 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 1.0k 2.0k 5.0k 10k MMBT6427LT1G, SMMBT6427LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT6427LT1/D