PTZ5.6B
Diodes
Rev.C 1/4
Zener diode
PTZ5.6B
zA pplications zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
Voltage regulation
PMDS
2.0
4.2
2.0
Symbol Unit
Pm
Tj ℃
Ts tg ℃
Param eter
W
unction temperature
torage temperature
ower dissipation
Limits
150
-55 to +150
1000
J
S
P
zFeatures
1) Small power mold type. (PMDS)
2) High ESD tolerance
zConstruction
Silicon epitaxial planar zStructure
ROHM : PMDS
JEDEC : SOD-106
①Manufacture Date
②
①
②
EX. PTZ10B
0.1±0.02
0.1
2.6±0.2
2.0±0.2
5.0±0.3
1.2±0.3
4.5±0.2
1.5±0.2
zTaping dimensions (Unit : mm)
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
0.05
2.8MAX
zA bsolute maximum ratings (Ta=25°C)
PTZ5.6B
Diodes
Rev.C 2/4
zElectrical characteristics (Ta=25°C)
MIN. TYP. MAX. Iz(mA) Max. Iz(mA) MAX. VR(V) TYP. Iz(mA) MIN.
Test Condition
PTZ 3.6B 3.600 3.813 4.000 40 15 40 60 1.0 -2.8 40
PTZ 3.9B 3.900 4.136 4.400 40 15 40 40 1.0 -2.4 40
PTZ 4.3B 4.300 4.572 4.800 40 15 40 20 1.0 -2.1 40
PTZ 4.7B 4.700 4.924 5.200 40 10 40 20 1.0 -1.7 40
PTZ 5.1B 5.100 5.368 5.700 40 840 20 1.5 -0.6 40
PTZ 5.6B 5.600 5.856 6.300 40 840 20 2.5 1.4 40
PTZ 6.2B 6.200 6.509 7.000 40 640 20 3.0 2.5 40
PTZ 6.8B 6.800 7.280 7.700 40 640 20 3.5 3.2 40
PTZ 7.5B 7.500 7.889 8.400 40 440 20 4.0 4.2 40
PTZ 8.2B 8.200 8.655 9.300 40 440 20 5.0 5.0 40
PTZ 9.1B 9.100 9.747 10.200 40 640 20 6.0 5.9 40
PTZ 10B 10.000 10.310 11.200 40 640 10 7.0 6.9 40
PTZ 11B 11.000 11.510 12.300 20 820 10 8.0 7.9 20
PTZ 12B 12.000 12.500 13.500 20 820 10 9.0 8.7 20
PTZ 13B 13.300 13.820 15.000 20 10 20 10 10.0 10.1 20
PTZ 15B 14.700 15.350 16.500 20 10 20 10 11.0 11.8 20
PTZ 16B 16.200 16.860 18.300 20 12 20 10 12.0 13.3 20
PTZ 18B 18.000 19.000 20.300 20 12 20 10 13.0 15.0 20
PTZ 20B 20.000 20.820 22.400 20 14 20 10 15.0 17.4 20
PTZ 22B 22.000 23.850 24.500 10 14 10 10 17.0 19.4 10
PTZ 24B 24.000 25.310 27.600 10 16 10 10 19.0 21.6 10
PTZ 27B 27.000 28.700 30.800 10 16 10 10 21.0 24.6 10
PTZ 30B 30.000 31.570 34.000 10 18 10 10 23.0 27.5 10
PTZ 33B 33.000 34.950 37.000 10 18 10 10 25.0 30.8 10
PTZ 36B 36.000 39.240 40.000 10 20 10 10 27.0 37.0 10
1.The Zener voltage(Vz) is measured 40ms after power is supplied.
2.The operating resistances(Zz､Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz).
30kV
C=150pF
R=330Ω
forward
and
reverse :
10 times
ESD Break down voltage : ESD(kV)
Operating resistance : Zz(Ω)
Reverse current : IR(μA)
Temperature coefficiency : *γz(mV/℃)
Zener voltage : Vz(V)
Symbol
TYP.
zMarking (TYPE NO.)
TYPE TYPE NO. TYPE TYPE NO. TYPE TYPE NO.
PTZ 3.6B
3.6B
PTZ 8.2B
8.2B
PTZ 20B
20B
PTZ 3.9B
3.9B
PTZ 9.1B
9.1B
PTZ 22B
22B
PTZ 4.3B
4.3B
PTZ 10B
10B
PTZ 24B
24B
PTZ 4.7B
4.7B
PTZ 11B
11B
PTZ 27B
27B
PTZ 5.1B
5.1B
PTZ 12B
12B
PTZ 30B
30B
PTZ 5.6B
5.6B
PTZ 13B
13B
PTZ 33B
33B
PTZ 6.2B
6.2B
PTZ 15B
15B
PTZ 36B
36B
PTZ 6.8B
6.8B
PTZ 16B
PTZ 7.5B
7.5B
PTZ 18B
18B
16B
PTZ5.6B
Diodes
Rev.C 3/4
zElectrical characteristic curves (Ta=25°C)
POWER DISSIPATION:Pd(W)
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
TEMP.COEFFICIENCE:γz(％/℃)
TIME:t(ms)
IFSM -t CHAR ACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
REVERSE SURGE MAXIMUM
POWER:PRSM(W)
0.1
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=0.5A
300us
time
Mounted on epoxy board
0
200
400
600
800
1000
1200
0 255075100125150
1
10
100
1000
10000
0.001 0.01 0.1 1 10 100
t
PRSM
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40 45
3.6
24
20
18
1615131211109.18.27.55.6 6.86.2
5.1
4.7
4.3
3.9
36
30
27 33
22
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
-0.08
-0.06
-0.04
-0.02
0
0.02
0.04
0.06
0.08
0.1
0.12
010203040
-5
0
5
10
15
20
25
30
35
40
AMBIENT TEMPERATURE:Ta(℃)
Pd-Ta CHARACTERISTICS
TEMP.COEFFICIENCE:γz(mV/℃)
PTZ5.6B
Diodes
Rev.C 4/4
0
5
10
15
20
25
30
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
C=150pF
R=330Ω
No break at 30kV
100
1000
10000
00.511
ZENER VOLTAGE：Vz(V)
Vz-Iz CHARACTERISTICS
ZENER CURRENT:Iz(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Vz DISPERSION MAP
ZENER VOLTAGE:Vz(V)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
ZENER CURRENT:Iz(mA)
Zz-Iz CHARACTERISTICS
DYNAMIC IMPEDANCE:Zz(Ω)
.5
f=1MHｚ
0.0001
0.001
0.01
0.1
1
10
100
1000
0 0.5 1 1.5 2 2.5
Ta=125℃
Ta=25℃
Ta=75℃
Ta=-25℃
Ta=150℃
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Ta=25℃
VR=2.5V
n=30pcs
AVE:0.080nA
750
760
770
780
790
800
810
820
830
840
850
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:802.4pF
0.001
0.01
0.1
1
10
100
34567
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
1
10
100
1000
10000
0.1 1 10
5.6
5.7
5.8
5.9
6
6.1
AVE:5.856V
Ta=25℃
IZ=40mA
n=30pcs
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
