© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 12 1Publication Order Number:
MBR1635/D
MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
•Guard−ring for Stress Protection
•Low Forward Voltage
•175°C Operating Junction Temperature
•NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 Grams for TO−220
1.7 Grams for D2PAK
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR1635
MBR1645
MBRB1645
VRRM
VRWM
VR35
45
45
V
Average Rectified Forward Current Delay
(Rated VR, TC = 163°C) Total Device IF(AV) 16 A
Peak Repetitive Forward Current, Per
Leg
(Rated VR, Square Wave,
20 kHz, TC = 157°C) Total Device
IFRM 32 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
Device Package Shipping
ORDERING INFORMATION
TO−220AC
CASE 221B
PLASTIC
3
4
1
MBR1635G TO−220
(Pb−Free) 50 Units / Rail
31, 4
MARKING
DIAGRAMS
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
B16x5 = Device Code
x = 3 or 4
KA = Diode Polarity
G = Pb−Free Package
AYWWG
B16x5
KA
MBR1645G TO−220
(Pb−Free) 50 Units / Rail
B1645G
AYWW
D2PAK
CASE 418B
STYLE 3
3
4
1
B1645 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MBRB1645T4G D2PAK
(Pb−Free) 800 Units / Rail
1
3
4
NRVBB1645T4G D2PAK
(Pb−Free) 800 Units / Rail
MBR1635, MBR1645, MBRB1645, NRVBB1645
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case RqJC 1.5 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 16 Amps, TC = 125°C)
(iF = 16 Amps, TC = 25°C)
vF0.57
0.63
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR40
0.2
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
MBR1635, MBR1645, MBRB1645, NRVBB1645
http://onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
0.60
vF, INSTANTANEOUS FORW ARD VOLTAGE (V)
100
70
20
50
10
VR, REVERSE VOLTAGE (V)
0
iF, INSTANTANEOUS FORWARD CURRENT
(A)
7.0
5.0
3.0
0.2 0.4 0.8 10 20 30 40
2.0
1.0 1.0 5
0
TJ = 125°C
100°C25°C
TJ = 150°C
125°C
30
25°C
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
IR, REVERSE CURRENT (A)
Figure 3. Current Derating, Case, Per Leg Figure 4. Current Derating, Ambient
Figure 5. Forward Power Dissipation
4.0 8.00
IF(AV), AVERAGE FORWARD CURRENT (A)
16
8.0
6.0
4.0
2.0
06.0
P
10 2012
14
2.0 14 16 18
10
12
, AVERAGE POWER DISSIPATION (W)
F(AVE)
SQUARE WAVE
dc
TJ = 125°C
(CAPACITATIVELOAD)
IPK
IAV +5.0
10
20
(RESISTIVE LOAD) IPK
IAV +p
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
0
2
4
6
8
155 160 165 170 175
SQUARE
IF(AV), AVERAGE FORWARD
CURRENT (A)
0
2
4
6
8
0 25 50 75 100 125 150 17
5
dc
dc
SQUARE
WAVE
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
IF(AV), AVERAGE FORWARD
CURRENT (A)
145
10
12
14
dc
10
12
14
16
18
20
22
24
26
28
16
18
20
150
MBR1635, MBR1645, MBRB1645, NRVBB1645
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4
PACKAGE DIMENSIONS
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
D2PAK
CASE 418B−04
ISSUE J
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
MBR1635, MBR1645, MBRB1645, NRVBB1645
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE E
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
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MBR1635/D
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