SIEMENS Silicon Switching Diodes @ For high-speed switching @ High breakdown voltage @ Common cathode BAW 79 A ... BAW 79 D VPS 05162 Type Marking Ordering Code Pin Configuration Package) (tape and reel) BAW 79 A GE Q62702-A781 2 SOT-89 BAW 79 B GF Q62702-A782 ' 3 BAW 79 C GG Q62702-A771 BAW 79D GH Q62702-A733 HAO7003 Maximum Ratings per Diode Parameter Symbol Values Unit BAW 79 A| BAW 79 B| BAW 79 C| BAW 79 D Reverse voltage Vr 50 100 200 400 Vv Peak reverse voltage Vam 50 100 200 400 Forward current Te 1 A Peak forward current Tem 1 Surge forward current Irs 10 t=1us Total power dissipation Prot 1 WwW Ts= 115C Junction temperature qT 150 C Storage temperature range | Tstg - 65... + 150 Thermal Resistance Junction - ambient?) Rin sa $175 K/W Junction - soldering point =| Rinss <35 1} For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm 1.5 mm/6 cm? Cu. Semiconductor Group 375 01.97SIEMENS BAW 79 A ... BAW 79 D Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Values min. | typ. | max. Unit DC characteristics Breakdown voltage Very Term = 100 pA BAW 79 A 50 - - BAW 79 B 100 - - BAW 79 C 200 - ~ BAW 79 D 400 - - Forward voltage) , Vr Ir=1A ~ - 1.6 fe=2A - - 2 Reverse current JR Va = Vamax - - 1 Va = Vamex, Ta = 150 C - - 50 AC characteristics Diode capacitance Co - 10 - Va =0V, f= 1 MHz pF Reverse recovery time tr - 1 - Ir = 200 mA, In = 200 mA, R.= 100 Q measured at Ja = 20 MA LS Test circuit for reverse recovery time BU.T. cH LU ty Oscillograph CL Bng0036 Pulse generator: tp = 5 ps, D=0.05 Oscillograph: R=502 tr=0.6 ns, Rj = 500 f = 0.35 ns C<1pF Pulse test: p< 300 ps, D= 2 %. Semiconductor Group 376SIEMENS BAW 79 A . BAW 79D Forward current Ir = f (Ta*; 7s) Forward current /r = f (Vr) * Package mounted on epoxy Ta = 25C 1.2 BAW 794...D EHBOO098 10! Baw 79A...D EHBOOOSS OA { 1.0 0.8 I, A 10 0.6 1 o7! 0.4 107 0.2 0.05 50 700 150 5 1 Yo Tk, ~ V; Peak forward current /rm = f (1) Reverse current /n = f (Ta) Ta = 25C Va = Vamax BAW 79A...0 H800101 10 5 9A. nA te U mill rT 107 10 1o io 107? sto" 0 50 100 C 150 } - |, Semiconductor Group 377