TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT
TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT
TC74HC4053AP,TC74HC4053AF,TC74HC4053AFT
TC74HC4051AP/AF/AFT
8-Channel Analog Multiplexer/Demultiplexer
TC74HC4052AP/AF/AFT
Dual 4-Channel Analog
Multiplexer/Demultiplexer
TC74HC4053AP/AF/AFT
Triple 2-Channel Analog
Multiplexer/Demultiplexer
The TC74HC4051A/4052A/4053A are high speed CMOS
ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with
silicon gate C2MOS technology. They achieve the high speed
operation similar to equivalent LSTTL while maintaining the
CMOS low power dissipation.
The TC74HC4051A has an 8 channel configuration, the
TC74HC4052A has a 4 channel × 2 configuration and the
TC74HC4053A has a 2 channel × 3 configuration.
The digital signal to the control terminal turns “ON” the
corresponding switch of each channel a large amplitude signal
(VCC VEE) can then be switched by the small logical amplitude
(VCC GND) control signal.
For example, in the case of VCC = 5 V, GND = 0 V, VEE = 5 V,
signals between 5 V and +5 V can be switched from the logical
circuit with a single power supply of 5 V. As the ON-resistance of
each switch is low, they can be connected to circuits with low
input impedance.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 15 ns (typ.) at VCC = 5 V, VEE = 0 V
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Low ON resistance: RON = 50 Ω (typ.) at VCC VEE = 9 V
High noise immunity: THD = 0.02% (typ.) at VCC VEE = 9 V
Pin and function compatible with 4051/4052/4053B
TC74HC4051AP, TC74HC4052AP,
TC74HC4053AP
TC74HC4051AF, TC74HC4052AF,
TC74HC4053AF
TC74HC4051AFT, TC74HC4052AFT,
TC74HC4053AFT
Weight
DIP16-P-300-2.54A : 1.00 g (typ.)
SOP16-P-300-1.27A : 0.18 g (typ.)
TSSOP16-P-0044-0.65A : 0.06 g (typ.)
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
2
Pin Assignment
VCC 16
2
1
0
15
14
13
12
11
10
1
2
3
4
5
6
7
7
5
INH
VEE
GND
3
89
A
B
(top view)
6
COM
TC74HC4051A
4
C
VCC
16
2X
1X
X-COM
15
14
13
12
11
10
1
2
3
4
5
6
7
3Y
1Y
INH
VEE
GND
0X
89
3X
A
(top view)
2Y
Y-COM
0Y
TC74HC4052A
B
VCC 16
Y-COM
X-COM
1X
15
14
13
12
11
10
1
2
3
4
5
6
7
Z-COM
0Z
INH
VEE
GND
0X
8 9
A
B
(top view)
0Y
1Z
TC74HC4053A
1Y
C
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
3
IEC Logic Symbol
Truth Table
Control Inputs “ON” Channel
Inhibit C* B A HC4051A HC4052A HC4053A
L L L L 0 0X, 0Y 0X, 0Y, 0Z
L L L H 1 1X, 1Y 1X, 0Y, 0Z
L L H L 2 2X, 2Y 0X, 1Y, 0Z
L L H H 3 3X, 3Y 1X, 1Y, 0Z
L H L L 4 0X, 0Y, 1Z
L H L H 5 1X, 0Y, 1Z
L H H L 6 0X, 1Y, 1Z
L H H H 7 1X, 1Y, 1Z
H X X X None None None
X: Don’t care
*: Except HC4052A
7
0
8×
(6)
(9)
1
3
2
(3)
5
4
(13)
(15)
(1)
1
3
5
(14)
(12)
(5)
2
4
6
2
G8 INH
C
6
7
(2)
7
(4)
0
0
TC74HC4051A
MUXDMUX
COM 0... 7
(10)
(11)
B
A0
TC74HC4052A
3
0
4×
(6)
(9)
MUXDMUX
(13)
X-COM
Y-COM
(12)
(15)
(1)
(14)
(11)
(5)
1
G4
INH
(3) (2)
(4)
B
(10)
A0
1X
3X
1Y
2X
0Y
2Y
3Y
0X
1
3
2
0
0... 3
TC74HC4053A
(6) MUXDMUX
(14)
X-COM
Z-COM
(12)
(13)
(1)
(2)
(5)
G2
INH
(4) (3)
0Y
0Z
1X
1Y
1Z
0X
1
0
0, 1
C(9)
Y-COM (15)
B(10)
A(11) 2 × 0
2 × 1
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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System Diagram
TC74HC4051A
TC74HC4052A
TC74HC4053A
0X
3X
A
1Y
B
INH
1X
2X
0Y
2Y
3Y
Logic Level Converter
IN
IN
X-COM
Y-COM
OUT c
OUT c
X-COM
0Y
A
0Z
B
INH
C
0X
1X
1Y
1Z
Z-COM
Logic Level Converter
IN
Y-COM
IN
OUT c
OUT c
0
3
A
5
B
INH
C
OUT
1
2
4
6
7
Logic Level Converter
IN
IN
COM
c
OUT c
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range VCC 0.5 to 7 V
Supply voltage range VCC-VEE 0.5 to 13 V
Control input voltage VIN 0.5 to VCC + 0.5 V
Switch I/O voltage VI/O V
EE 0.5 to VCC + 0.5 V
Control input diode current IICK ±20 mA
I/O diode current IOK ±20 mA
Switch through current IT ±25 mA
DC VCC or ground current ICC ±50 mA
Power dissipation PD 500 (DIP) (Note 2)/180 (SOP, TSSOP) mW
Storage temperature Tstg 65 to 150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = 40 to 65°C. From Ta = 65 to 85°C a derating factor of 10 mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage range VCC 2 to 6 V
Supply voltage range VEE 6 to 0 V
Supply voltage range VCC-VEE 2 to 12 V
Control input voltage VIN 0 to VCC V
Switch I/O voltage VI/O VEE to VCC V
Operating temperature Topr 40 to 85 °C
Control input rise and fall time tr, tf
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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Electrical Characteristics
DC Characteristics
Test Condition Ta = 25°C Ta =
40 to 85°C
Characteristics Symbol
VEE (V) VCC (V) Min Typ. Max Min Max
Unit
High-level control
input voltage VIHC
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
V
Low-level control
input voltage VILC
2.0
4.5
6.0
0.50
1.35
1.80
0.50
1.35
1.80
V
VIN = VILC or VIHC
VI/O = VCC to VEE
II/O 2 mA
GND
4.5
6.0
4.5
4.5
6.0
85
55
50
180
120
100
225
150
125
ON resistance RON
VIN = VILC or VIHC
VI/O = VCC or VEE
II/O 2 mA
GND
GND
4.5
6.0
2.0
4.5
4.5
6.0
150
70
50
45
150
100
80
190
125
100
Ω
Difference of ON
resistance between
switches
ΔRON
VIN = VILC or VIHC
VI/O = VCC to VEE
II/O 2 mA
GND
4.5
6.0
4.5
4.5
6.0
10
5
5
30
12
10
35
15
12
Ω
Input/output leakage
current
(switch off)
IOFF
VOS = VCC or GND
VIS = GND or VCC
VIN = VILC or VIHC
GND
6.0
6.0
6.0
±60
±100
±600
±1000 nA
Switch input leakage
current
(switch on)
IIZ VOS = VCC or GND
VIN = VILC or VIHC
GND
6.0
6.0
6.0
±60
±100
±600
±1000 nA
Control input current IIN VIN = VCC or GND GND 6.0 ±0.1 ±1.0 μA
Quiescent supply
current ICC VIN = VCC or GND GND
6.0
6.0
6.0
4.0
8.0
40.0
80.0 μA
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns, GND = 0 V)
Test Condition Ta = 25°C Ta =
40 to 85°C
Characteristics Symbol
VEE (V) VCC (V) Min Typ. Max Min Max
Unit
Phase difference
between input and
output
φI/O All types
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
25
6
5
4
60
12
10
75
15
13
ns
4051 (Note 1)
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
64
18
15
18
225
45
38
280
56
48
4052 (Note 1)
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
64
18
15
18
225
45
38
280
56
48
Output enable time tpZL
tpZH
4053 (Note 1)
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
50
14
12
14
225
45
38
280
56
48
ns
4051 (Note 1)
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
100
33
28
29
250
50
43
315
63
54
4052 (Note 1)
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
100
33
28
29
250
50
43
315
63
54
Output disable time tpLZ
tpHZ
4053 (Note 1)
GND
GND
GND
4.5
2.0
4.5
6.0
4.5
95
30
26
26
225
45
38
280
56
48
ns
Control input
capacitance CIN All types 5 10 10 pF
COMMON terminal
capacitance CIS
4051
4052
4053
5.0 5.0
36
19
11
70
40
20
70
40
20
pF
SWITCH terminal
capacitance COS
4051
4052
4053
5.0 5.0
7
7
7
15
15
15
15
15
15
pF
Feedthrough
capacitance CIOS
4051
4052
4053
5.0 5.0
0.95
0.85
0.75
2
2
2
2
2
2
pF
Power dissipation
capacitance CPD
4051
4052 (Note 2)
4053
GND 5.0
70
71
67
pF
Note 1: RL = 1 kΩ
Note 2: CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the
operating current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note 1)
Test Condition
Characteristics Symbol
VEE
(V)
VCC
(V)
Typ. Unit
Sine wave distortion
(T.H.D)
RL = 10 kΩ,
CL = 50 pF
fIN = 1 kHz
VIN = 4.0 Vp-p
VIN = 8.0 Vp-p
VIN = 11.0 Vp-p
2.25
4.5
6.0
2.25
4.5
6.0
0.025
0.020
0.018
%
All (Note 2) 120
4051 (Note 3) 45
4052 70
4053
2.25 2.25
95
All (Note 2) 190
4051 (Note 3) 70
4052 110
4053
4.5 4.5
150
All (Note 2) 200
4051 (Note 3) 85
4052 140
Frequency response
(switch on) fmax
Adjust fIN voltage to obtain
0dBm at VOS
Increase fIN frequency until
dB meter reads 3dB
RL = 50 Ω, CL = 10 pF
fIN = 1 MHz, sine wave
4053
6.0 6.0
190
MHz
Feed through attenuation
(switch off)
VIN is centered at (VCC VEE)/2
Adjust input for 0dBm
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, sine wave
2.25
4.5
6.0
2.25
4.5
6.0
50
50
50
dB
Crosstalk
(control input to signal output) RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, square wave (tr = tf = 6 ns)
2.25
4.5
6.0
2.25
4.5
6.0
60
140
200
mV
Crosstalk
(between any switches)
Adjust VIN to obtain 0dBm at input
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, sine wave
2.25
4.5
6.0
2.25
4.5
6.0
50
50
50
dB
Note 1: These characteristics are determined by design of devices.
Note 2: Input COMMON terminal, and measured at SWITCH terminal.
Note 3: Input SWITCH terminal, and measured at COMMON terminal.
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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Switching Characteristics Test Circuits
1. tpLZ, tpHZ, tpZL, tpZH
2. Cross Talk (control input-switch output) fIN = 1 MHz duty = 50% tr = tf = 6 ns
3. Feedthrough Attenuation
VCC
GND
VOH
VOL
VOH
VOL
90%
tpHZ
tpLZ
10%
tpZL
tpZH
50%
50%
50%
90%
10%
VC
VO/I
(S1 = VCC, S2 = GND)
VO/I
(S1 = GND, S2 = VCC)
6 ns 6 ns
1 k S2
GND VEE
VCC
C
S1
from
P.G
O/I I/O
VCC
50 pF
VCC
GND
from
P.G
600 Ω
50 pF
600 Ω
VCC
GND VEE
VCC C
O/I I/O
VCC
0.1 μF
600
50 pF
600
VIN
GND VEE
VCC C
O/I I/O
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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4. CIOS, CIS, COS
5. Cross Talk (between any two switches)
6. Frequency Response (switch on)
VCC
COS
COMMONSWITCH
CIS
CIOS
GND VEE
VCC
C
O/I I/O
VIN
VCC
600 Ω
GND VEE
600 Ω
50 pF
0.1 μF
600 Ω
50 pF
O/II/O
600 Ω
C
VCC C
O/II/O
VCC
0.1 μF
50 Ω
10 pF
VIN
GND VEE
VCC C
O/I I/O
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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Package Dimensions
Weight: 1.00 g (typ.)
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
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Package Dimensions
Weight: 0.18 g (typ.)
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
13
Package Dimensions
Weight: 0.06 g (typ.)
TC74HC4051,4052,4053AP/AF/AFT
2012-02-29
14
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
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