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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQA8N100C N-Channel QFET(R) MOSFET 1000 V, 8 A, 1.45 Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies. * RDS(on) = 1.45 (Max.) @ VGS = 10 V, ID = 4 A * Low Gate Charge (Typ. 53 nC) * Low Crss (Typ. 16 pF) * 100% Avalanche Tested D G G D TO-3PN S S Absolute Maximum Ratings Symbol TC = 25C unless otherwise noted. Parameter FQA8N100C VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) Unit 1000 V 8 5 A A 32 A 30 V 850 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds (TC = 25C) - Derate above 25C 4.0 V/ns 225 1.79 W W/C -55 to +150 C 300 C Thermal Characteristics FQA8N100C Unit RJC Thermal Resistance, Junction-to-Case, Max. 0.56 C/W RCS Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W RJA Thermal Resistance, Junction-to-Ambient, Max. 40 C/W Symbol Parameter (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 1 www.fairchildsemi.com FQA8N100C -- N-Channel QFET(R) MOSFET March 2014 Part Number FQA8N100C Top Mark FQA8N100C Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25C unless otherwise noted. Parameter Conditions Min. Typ. 1000 -- -- V Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 1.4 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V VDS = 800V, TC = 125C --- --- 10 100 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 4A -- 1.2 1.45 gFS Forward Transconductance VDS = 50V, ID = 4A -- 8.0 -- S VDS = 25V, VGS = 0V, f = 1.0MHz -- 2475 3220 pF -- 195 255 pF -- 16 24 pF -- 50 110 ns -- 95 200 ns -- 122 254 ns -- 80 170 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 500V, ID = 8A RG = 25 (Note 4) VDS = 800V, ID = 8A VGS = 10V (Note 4) -- 53 70 nC -- 13 -- nC -- 23 -- nC 8 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 8A -- -- 1.4 V trr Reverse Recovery Time 620 -- ns Reverse Recovery Charge VGS = 0V, IS = 8A dIF/dt =100A/s -- Qrr -- 5.2 -- C NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 8 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 2 www.fairchildsemi.com FQA8N100C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 Notes : 1. VDS = 50V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 10 2 8 6 4 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 1.5 VGS = 20V 1.0 1 10 0 10 25 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.5 -1 0 5 10 15 20 10 25 0.2 0.4 Figure 5. Capacitance Characteristics 4000 Ciss Coss 1500 Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 0 -1 10 1.2 1.4 VDS = 200V 10 2500 2000 1.0 12 VGS, Gate-Source Voltage [V] Capacitance [pF] 3000 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3500 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] VDS = 500V VDS = 800V 8 6 4 2 Note : ID = 8A 0 10 0 1 10 (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 0 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQA8N100C -- N-Channel QFET(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 o ID, Drain Current [A] ID, Drain Current [A] 10 s 100 s 1 ms 10 ms DC 0 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 200 6 4 2 -2 10 150 8 1 10 100 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 2 50 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 0 o TJ, Junction Temperature [ C] 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZJ C(t), Thermal Response [oC/W] 10 0 D = 0 .5 0 .2 10 N o te s : 1 . Z JC (t) = 0 .5 6 /W M a x. 2 . D u t y F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC (t) -1 0 .1 PDM 0 .0 5 t1 0 .0 2 0 .0 1 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 4 www.fairchildsemi.com FQA8N100C -- N-Channel QFET(R) MOSFET Typical Performance Characteristics FQA8N100C -- N-Channel QFET(R) MOSFET 50K 50K 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp tp Ti Tim me Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 5 www.fairchildsemi.com FQA8N100C -- N-Channel QFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 6 www.fairchildsemi.com FQA8N100C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 (c)2005 Fairchild Semiconductor Corporation FQA8N100C Rev C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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