DUAL/QUADCHANNEL ILD32/ILQ32 Photodarlington Optocoupler Dimensions in inches (mm) FEATURES * Very High Current Transfer Ratio, 500% Min. * Isolation Test Voltage, 5300 VRMS * High Isolation Resistance, 1011 Typical * Low Coupling Capacitance * Standard Plastic DIP Package * Underwriters Lab File #E52744 V * VDE 0884 Available with Option 1 Dual Channel DESCRIPTION The ILD32/ILQ32 are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. The ILD32 has two isolated channels in a DIP package, and the ILQ32 has four channels. These devices can be used to replace 4N32s or 4N33s in applications calling for several single channel optocouplers on a board. 4 3 2 1 5 6 7 8 Anode .255 (6.48) .268 (6.81) .030 (0.76) .045 (1.14) 4 typ. 1 8 Emitter Cathode 2 7 Collector Cathode 3 6 Collector .379 (9.63) .390 (9.91) D E Maximum Ratings (Each Channel) Emitter Peak Reverse Voltage ...................................... 3.0 V Continuous Forward Current .......................... 60 mA Power Dissipation at 25C........................... 100 mW Derate Linearly from 25C ..................... 1.33 mW/C Detector Collector-Emitter Breakdown Voltage ............... 30 V Collector (Load) Current............................... 125 mA Power Dissipation at 25C Ambient ............ 150 mW Derate Linearly from 25C ....................... 2.0 mW/C Package Isolation Test Voltage (between emitter and detector refer to standard climate 23C/50%RH, DIN 50014) t=1.0 sec.............................................. 5300 VRMS Creepage .................................................. 7.0 mm Clearance .................................................. 7.0 mm Comparative Tracking Index per DIN IEC 112/VDE303, part 1 ........................ 175 Isolation Resistance VIO=500V, TA=25C ........................... RIO=1012 VIO=500V, TA=100C ......................... RIO=1011 Total Dissipation at 25C Ambient ILD32 ...................................................... 400 mW ILQ32 ...................................................... 500 mW Derate Linearly from 25C ILD32 ................................................ 5.33 mW/C ILQ32 ................................................ 6.67 mW/C Storage Temperature .................... -55C to +150C Operating Temperature ................ -55C to +100C Lead Soldering Time at 260C ..................... 10 sec. pin one ID Anode 4 5 Emitter .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) 3-9 .008 (.20) .012 (.30) Quad Channel Anode pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 11 12 13 14 15 16 .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 1 16 Emitter Cathode 2 15 Collector Cathode 3 14 Collector Anode 4 13 Emitter 5 12 Emitter Anode Cathode 6 11 Collector Cathode 7 10 Collector Anode 8 9 .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. Emitter .300 (7.62) typ. .050 (1.27) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) 10 typ. 3-9 .008 (.20) .012 (.30) Table 1. Electrical Characteristics, TA=25C Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF -- 1.25 1.5 V IF=10 mA Reverse Current IR -- 0.1 100 A VR=3.0 V Capacitance CO -- 25 -- pF VR=0 V Breakdown Voltage Collector-Emitter BVCEO 30 -- -- V IC=100 A IF=0 Breakdown Voltage Emitter-Collector BVECO 5.0 10 -- V IE=100 A Collector-Emitter Leakage Current ICEO -- 1.0 100 nA VCE=10V IF=0 Current Transfer Ratio CTR 500 -- -- % IF=10 mA VCE=10V Collector Emitter Saturation Voltage VCEsat -- -- 1.0 V IC=2.0 mA IF=8.0 mA Isolation Capacitance CISOL -- 0.5 -- pF -- Turn-On Time ton -- 15 -- s Turn-Off Time toff -- 30 -- s VCC=10 V IF=5.0 mA RL=100 Emitter Detector Package 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-179 February 24, 2000-21 Ta = -55C 1.3 1.2 Ta = 25C 1.1 1.0 0.9 Ta = 85C 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 20 1K Ta = 25C Vcc = 10 V Vth = 1.5 V 15 10 100 5 0 0 Figure 2. Normalized non-saturated and saturated CTRce at TA=25C versus LED current 1.2 Normalized to: Vce = 10 V 1.0 IF = 10 mA Ta = 25 C 0.8 Vce = 10V NCTRce - Normalized CTR Figure 5. High to low propagation delay versus collector load resistamce and LED current tpHL - High/Low Propagation delay - s VF - Forward Voltage - V Figure 1. Forward voltage versus forward current 1.4 5 10 15 IF - LED Current - mA 20 Figure 6. Switching timing IF 0.6 0.4 VO tD tR tPLH 0.2 Vce =1V 0.0 .1 1 10 100 IF - LED Current - mA 1000 Figure 3. Normalized non-saturated and saturated collector-emitter current versus LED current 10 N Ice - Normalized Ice Normalized to: Ta = 25C IF = 10 mA 1 Vce = 10 V tPHL tS VTH=1.5 V tF Figure 7. Switching schematic Vce = 10 V VCC=10 V F=10 KHz, DF=50% Vce = 1V RL VO .1 IF=5 mA .01 .001 .1 100 1 10 IF - LED Current - mA tpLH - Low/High Propagation Delay - s Figure 4. Low to high propagation delay versus collector load resistance and LED current 80 Ta = 25C, Vcc = 10 V Vth = 1.5 V 1K 60 220 40 470 20 100 0 0 5 10 15 IF - LED Current - mA 20 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) ILD/Q32 2-180 February 24, 2000-21