BY527 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES * Controlled avalanche characteristics * Glass passivated junction * Hermetically sealed package * Low reverse current * High surge current capability * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 949539 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS * General purpose Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS BY527 BY527TR 5000 per 10" tape and reel MINIMUM ORDER QUANTITY 25 000 BY527 BY527TAP 5000 per ammopack 25 000 PART TYPE DIFFERENTIATION PACKAGE BY527 VR = 800 V; IF(AV) = 2 A SOD-57 PARTS TABLE ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER Reverse voltage Reverse voltage, non repetitive Peak forward surge current TEST CONDITION PART SYMBOL VALUE UNIT See electrical characteristics BY527 VR 800 V lR = 100 A BY527 VRSM 1250 V tp = 10 ms, half sine wave IFSM 50 A lFRM 12 A = 180 IF(AV) 2 A Tj = 175 C, tp = 20 s, half sinus wave PR 1000 W l(BR)R = 1 A, Tj = 175 C ER 20 mJ i2 8 A2 s -55 to + 175 C Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2t rating Junction and storage temperature range t Tj = Tstg MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W Rev. 1.8, 20-Feb-18 Document Number: 86007 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BY527 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 1 A VF - 0.9 1 V IF = 10 A VF - - 1.65 V VR = 800 V IR - 0.1 1 A A Forward voltage Reverse current VR = 800 V, Tj = 100 C IR - 5 10 Breakdown voltage IR = 100 A, tp/T = 0.01, tp = 0.3 ms V(BR) 1250 - - V Diode capacitance VR = 4 V, f = 1 MHz CD - 16 - pF s Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 IF = 1 A, dI/dt = 5 A/s, VR = 50 V trr - - 4 s IF = 1 A, dI/dt = 5 A/s Qrr - - 3 C Reverse recovery charge 2.5 120 l l IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 80 TL = constant 60 40 20 2.0 l = 10 mm 1.5 1.0 PCB: d = 25 mm 0 0 5 10 15 20 25 0 30 l - Lead Length (mm) 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) 16423 Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 VR = VRRM IR - Reverse Current (A) 10 Tj = 175 C 1 0.1 Tj = 25 C 0.01 100 10 0.001 0 16422 RthJA = 100 K/W 0.5 0 949101 IF - Forward Current (A) VR = VRRM half sine wave RthJA = 45 K/W 0.5 1 1.5 2 2.5 1 3 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage 25 16424 50 75 100 125 150 175 Tj - Junction Temperature (C) Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.8, 20-Feb-18 Document Number: 86007 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BY527 Vishay Semiconductors 40 300 VR = VRRM CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 250 200 PR - Limit at 100 % VR 150 100 PR - Limit at 80 % VR 50 f = 1 MHz 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 0.1 Tj - Junction Temperature (C) 16425 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) 16426 Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 Zthp - Thermal Resistance for Pulse Cond. (K/W) VRRM = 1000 V, RthJA = 100 K/W 100 tp/T = 0.5 Tamb = 25 C tp/T = 0.2 10 Tamb = 45 C tp/T = 0.1 Tamb = 60 C tp/T = 0.05 1 tp/T = 0.02 Tamb = 70 C tp/T = 0.01 Tamb = 100 C 10-5 10-4 10-3 10-2 10-1 100 tp - Pulse Length (s) 94 9178 101 1 10 100 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 20-Feb-18 Document Number: 86007 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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