BY527
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 1Document Number: 86007
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current capability
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• General purpose
949539
click logo to get started
Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BY527 BY527TR 5000 per 10" tape and reel 25 000
BY527 BY527TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BY527 VR = 800 V; IF(AV) = 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage See electrical characteristics BY527 VR800 V
Reverse voltage, non repetitive lR = 100 μA BY527 VRSM 1250 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Repetitive peak forward current lFRM 12 A
Average forward current = 180° IF(AV) 2A
Pulse avalanche peak power Tj = 175 °C, tp = 20 μs, half sinus wave PR1000 W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) l(BR)R = 1 A, Tj = 175 °C ER20 mJ
i2t rating i2 t8A
2 s
Junction and storage temperature range Tj = Tstg -55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
BY527
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 2Document Number: 86007
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A VF-0.91 V
IF = 10 A VF- - 1.65 V
Reverse current VR = 800 V IR-0.11μA
VR = 800 V, Tj = 100 °C IR- 5 10 μA
Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) 1250 - - V
Diode capacitance VR = 4 V, f = 1 MHz CD-16-pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr --4μs
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr --4μs
Reverse recovery charge IF = 1 A, dI/dt = 5 A/μs Qrr --3μC
0
20
40
80
60
100
120
151050 202530
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949101
ll
TL = constant
0 0.5 1 1.5 2 2.5 3
16422
0.001
0.01
0.1
1
10
100
VF - Forward Voltage (V)
IF - Forward Current (A)
Tj = 175 °C
Tj = 25 °C
0 20 40 60 80 100 120 140 160 180
16423
0
0.5
1.0
1.5
2.0
2.5
Tamb - Ambient Temperature (°C)
IFAV - Average Forward Current (A)
VR = VRRM
half sine wave
RthJA = 45 K/W
l = 10 mm
RthJA = 100 K/W
PCB: d = 25 mm
16424
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
I
R
- Reverse Current (μA)
VR = VRRM
BY527
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 3Document Number: 86007
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
100
150
200
250
300
25 50 75 100 125 150 175
16425 Tj - Junction Temperature (°C)
PR - Reverse Power Dissipation (mW)
VR = VRRM
PR - Limit at 100 % VR
PR - Limit at 80 % VR
0
5
10
15
20
25
30
35
40
16426
0.1 1 10 100
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
Z
thp
- Thermal Resistance
for Pulse Cond. (K/W)
t
p
- Pulse Length (s)
94 9178
10-5 10-4 10-3 10-2 10-1 100101100
I
FRM
- Repetitive Peak
Forward Current (A)
110
VRRM = 1000 V, RthJA = 100 K/W
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Tamb = 25 °C
Tamb = 45 °C
Tamb = 60 °C
Tamb = 70 °C
Tamb = 100 °C
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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