2N7002E
Vishay Siliconix
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)ID (mA)
60 3 @ VGS = 10 V 240
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 3 W
DLow Threshold: 2 V (typ)
DLow Input Capacitance: 25 pF
DFast Switching Speed: 7.5 ns
DLow Input and Output Leakage
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Marking Code: 7Ewl
E = Part Number Code for 2N7002E
w = Week Code
l = Lot Traceability
Ordering Information: 2N7002E-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ = 150
_
C)
TA = 25_C
ID
240
Continuous Drain Current (TJ = 150_C) TA = 70_CID190 mA
Pulsed Drain CurrentaIDM 1300
Power Dissipation
TA = 25_C
PD
0.35
W
Power Dissipation TA = 70_CPD0.22 W
Thermal Resistance, Junction-to-Ambient RthJA 357 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
2N7002E
Vishay Siliconix
www.vishay.com
2
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA60 68
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA1 2 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "15 V "10 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TC = 125_C500 mA
On State Drain Currentb
ID( )
VGS = 10 V, VDS = 7.5 V 800 1300
mA
On-State Drain Current
b
ID(on) VGS = 4.5 V, VDS = 10 V 500 700 mA
Drain Source On Resistanceb
rDS( )
VGS = 10 V, ID = 250 mA 1.2 3
W
Drain-Source On-Resistance
b
rDS(on) VGS = 4.5 V, ID = 200 mA 1.8 4 W
Forward Transconductancebgfs VDS = 15 V, ID = 200 mA 600 mS
Diode Forward Voltage VSD IS = 200 mA, VGS = 0 V 0.85 1.2 V
Dynamica
Total Gate Charge Qg0.4 0.6
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V
ID ^ 250 mA 0.06 nC
Gate-Drain Charge Qgd
ID ^ 250 mA
0.06
Input Capacitance Ciss 21
Output Capacitance Coss VDS = 5 V, VGS = 0 V, f = 1 MHz 7pF
Reverse Transfer Capacitance Crss 2.5
Switchinga, c
Turn-On Time ton VDD = 10 V, RL = 40 W
ID ^ 250 mA VGEN = 10V
13 20
ns
Turn-Off Time toff
ID ^ 250 mA, VGEN = 10V
RG = 10 W18 25 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
2N7002E
Vishay Siliconix
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.0
0.3
0.6
0.9
1.2
01234567
0.0
0.2
0.4
0.6
0.8
1.0
012345
Output Characteristics Transfer Characteristics
On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
VGS = 10, 9, 8, 7, 6 V
3 V
5 V
4 V
VGS - Gate-to-Source Voltage (V)
TJ = - 55_C
125_C
ID - Drain Current (A)VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
0246810
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.2 0.4 0.6 0.8 1.0
25_C
ID @ 250 mA
VGS = 4.5 V
VGS = 10 V
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
0.0
0.4
0.8
1.2
1.6
2.0
-50 -25 0 25 50 75 100 125 150
VGS = 10 V @ 250 mA
VGS = 4.5 V
@ 200 mA
Threshold Voltage Variance Over Temperature
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50 -25 0 25 50 75 100 125 150
ID = 250 mA
TJ - Junction Temperature (_C)
ID @ 75 mA
ID - Drain Current (A)
ID - Drain Current (A)
rDS(on) - On-Resistance ( Ω )
rDS(on) - On-Resistance ( Ω )
rDS(on) - On-Resistance ( Ω )
(Normalized)
VGS(th) - Variance (V)
2N7002E
Vishay Siliconix
www.vishay.com
4
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
0.1
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2
Gate Charge
Qg - Total Gate Charge (nC)
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.1 0.2 0.3 0.4 0.5
VDS = 30 V
ID = 0.25 A
Capacitance
VDS - Drain-to-Source Voltage (V)
0
8
16
24
32
40
0 5 10 15 20 25
Crss
Coss
Ciss
TJ = 85_C
25_C-55_C
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
IS - Source Current (A)
