MSA-0836 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0836 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. * Usable Gain to 6.0 GHz * High Gain: 32.5 dB Typical at 0.1 GHz 23.0 dB Typical at 1.0 GHz * Low Noise Figure: 3.0 dB Typical at 1.0 GHz * Cost Effective Ceramic Microstrip Package The MSA-series is fabricated using Avago's 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 7.8 V 2 MSA-0836 Absolute Maximum Ratings Absolute Maximum[1] 80 mA 750 mW +13 dBm 150C -65C to 150C Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature [4] Thermal Resistance[2,5]: jc = 175C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5.7 mW/C for TC > 69C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. Electrical Specifications[1], TA = 25C Symbol GP VSWR Parameters and Test Conditions: Id = 36 mA, ZO = 50 Power Gain (|S 21| 2) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz Input VSWR f = 1.0 to 3.0 GHz Units Min. Typ. Max. 22.0 32.5 23.0 10.5 25.0 dB 2.0:1 Output VSWR f = 1.0 to 3.0 GHz NF 50 Noise Figure f = 1.0 GHz 1.5:1 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 27.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient dB V mV/C 3.0 125 7.0 7.8 8.4 -17.0 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-0836-BLKG 100 Bulk MSA-0836-TR1G 1000 7" Reel 3 MSA-0836 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 36 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .63 .58 .49 .40 .35 .33 .30 .30 .32 .34 .38 .39 .41 .52 -17 -33 -56 -70 -80 -89 -111 -133 -150 -170 175 162 132 95 32.5 31.5 29.1 26.7 24.6 22.9 19.5 16.9 14.9 13.2 11.7 10.5 7.9 5.8 42.02 37.52 28.50 21.54 17.01 13.98 9.45 7.03 5.53 4.56 3.86 3.33 2.47 1.94 161 145 119 103 92 82 64 48 39 26 14 2 -21 -45 -37.7 -33.7 -29.7 -27.9 -26.0 -24.9 -22.1 -20.2 -19.2 -18.3 -17.5 -16.7 -15.6 -14.6 .013 .021 .033 .040 .050 .057 .079 .098 .110 .122 .133 .146 .165 .187 55 47 54 55 53 52 51 44 42 36 32 27 19 7 .63 .56 .42 .32 .24 .18 .09 .07 .06 .06 .08 .12 .21 .20 -19 -37 -66 -84 -98 -107 -126 -141 -166 -106 -100 -101 -113 -149 0.72 0.73 0.72 0.78 0.85 0.89 0.95 0.99 1.04 1.06 1.08 1.08 1.10 1.05 Typical Performance, TA = 25C (unless otherwise noted) 35 35 30 Gain Flat to DC 30 25 0.1 GHz 30 TC = -55C 0.5 GHz 20 15 G p (dB) 25 Id (mA) G p (dB) 35 TC = +125C TC = +25C 20 1.0 GHz 20 2.0 GHz 15 10 10 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 FREQUENCY (GHz) 6 8 5 10 10 4.5 I d = 40 mA 14 11 10 P1 dB (dBm) 12 P1 dB P1 dB (dBm) 13 12 4.0 I d = 36 mA NF (dB) GP 21 40 Figure 3. Power Gain vs. Current. 16 23 30 I d (mA) Figure 2. Device Current vs. Voltage. 24 22 20 Vd (V) Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. Gp (dB) 4.0 GHz 10 5 10 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 8 NF (dB) 3.0 4 NF 6 I d = 20 mA 3 2 -55 -25 +25 +85 +125 4 0.1 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 TEMPERATURE (C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 36 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 GATE 1 SOURCE 1.45 0.25 (0.057 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 0.05 (0.006 0.002) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2742EN AV02-0306EN - April 12, 2007