74AHCT1G66GV - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2002 Feb 15 2002 Jun 06

INTEGRATED CIRCUITS

74AHC1G66; 74AHCT1G66

Bilateral switch

2002 Jun 06 2

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

FEATURES

•Very low ON-resistance:

–26Ω (typical) at VCC = 3.0 V

–16Ω (typical) at VCC = 4.5 V

–14Ω (typical) at VCC = 5.5 V.

•ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

•High noise immunity

•Low power dissipation

•Balanced propagation delays

•SOT353 and SOT753 package

•Output capability: non standard

•Specified from −40 to +125 °C.

DESCRIPTION

The74AHC1G/AHCT1G66isahigh-speedSi-gateCMOS

device.

The 74AHC1G/AHCT1G66 provides an analog switch.

The switch has two input/output pins (Y and Z) and an

active HIGH enable input pin (E). When pin E is LOW, the

analog switch is turned off.

QUICK REFERENCE DATA

Ground = 0 V; Tamb =25°C; tr=t

f≤3ns.

Notes

1. CPD is used to determine the dynamic power dissipation (PDin µW).

PD=C

PD ×VCC2×fi+ ((CL+C

)×V

CC2×fo) where:

fi= input frequency in MHz;

fo= output frequency in MHz;

CL= output load capacitance in pF;

CS= maximum switch capacitance in pF;

VCC = supply voltage in Volts.

2. The condition is VI= GND to VCC.

SYMBOL PARAMETER CONDITIONS TYPICAL UNIT

AHC1G AHCT1G

tPZH/tPZL turn-on time E to Vos CL= 15 pF; RL=1kΩ;

CC =5V 33ns

PHZ/tPLZ turn-off time E to Vos CL= 15 pF; RL=1kΩ;

CC =5V 55ns

Iinput capacitance 2 2 pF

CPD power dissipation capacitance CL= 50 pF; f = 10 MHz;

notes 1 and 2 13 15 pF

CSswitch capacitance 4 4 pF

2002 Jun 06 3

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

FUNCTION TABLE

See note 1.

Note

1. H = HIGH voltage level;

L = LOW voltage level.

ORDERING INFORMATION

PINNING

INPUT E SWITCH

L OFF

HON

TYPE NUMBER PACKAGE

TEMPERATURE

RANGE PINS PACKAGE MATERIAL CODE MARKING

74AHC1G66GW −40 to +125 °C 5 SC-88A plastic SOT353 AL

74AHCT1G66GW −40 to +125 °C 5 SC-88A plastic SOT353 CL

74AHC1G66GV −40 to +125 °C 5 SC-74A plastic SOT753 A66

74AHCT1G66GV −40 to +125 °C 5 SC-74A plastic SOT753 C66

PIN SYMBOL DESCRIPTION

1 Y independent input/output

2 Z independent output/input

3 GND ground (0 V)

4 E enable input (active HIGH)

CC supply voltage

handbook, halfpage

MNA074

VCC

GND

Fig.1 Pin configuration.

handbook, halfpage

MNA627

Fig.2 Logic symbol.

2002 Jun 06 4

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

handbook, halfpage

MNA076

4 # 12

Fig.3 IEC logic symbol.

handbook, halfpage

MNA628

VCC

Fig.4 Logic diagram.

2002 Jun 06 5

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

RECOMMENDED OPERATING CONDITIONS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);

note 1.

Note

1. To avoid drawing VCC current out of pin Z, when switch current flows into pin Y, the voltage drop across the

bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of pin Y.

In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed

VCC or GND.

SYMBOL PARAMETER CONDITIONS 74AHC1G66 74AHCT1G66 UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V

VIinput voltage 0 −5.5 0 −5.5 V

VSswitch voltage 0 −VCC 0−VCC V

Tamb operating ambient

temperature see DC and AC

characteristicsper

device

−40 +25 +125 −40 +25 +125 °C

tr,t

finput rise and fall times VCC = 3.3 ±0.3 V −−100 −−−ns/V

VCC = 5.0 ±0.5 V −−20 −−20 ns/V

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCC supply voltage −0.5 +7.0 V

IIK input diode current VI<−0.5 V or VI>V

CC + 0.5 V −−20 mA

ISK switch diode current VS<−0.5 V or VS>V

CC + 0.5 V −±20 mA

ISswitch source or sink current −0.5V<V

O<V

CC + 0.5 V −±25 mA

ICC, IGND VCC or GND current −±75 mA

Tstg storage temperature −65 +150 °C

PDpower dissipation per package for temperature range from −40 to +125 °C−250 mW

2002 Jun 06 6

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

DC CHARACTERISTICS

Type 74AHC1G66

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER

TEST CONDITIONS Tamb (°C)

UNIT

OTHER VCC

(V) 25 −40 to +85 −40 to +125

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

VIH HIGH-level input

voltage 2.0 1.5 −−1.5 −1.5 −V

3.0 2.1 −−2.1 −2.1 −V

5.5 3.85 −−3.85 −3.85 −V

VIL LOW-level input

voltage 2.0 −−0.5 −0.5 −0.5 V

3.0 −−0.9 −0.9 −0.9 V

5.5 −−1.65 −1.65 −1.65 V

ILI input leakage

current VI=V

CC or GND 5.5 −−0.1 −1.0 −2.0 µA

ISanalog switch

current, OFF-state VI=V

IH or VIL;

|VS|=V

CC −GND;

see Fig.5

5.5 −−0.1 −1.0 −4.0 µA

analog switch

current, ON-state VI=V

IH or VIL;

|VS|=V

CC −GND;

see Fig.6

5.5 −−0.1 −1.0 −4.0 µA

ICC quiescent supply

current VI=V

CC or GND;

Vis = GND or VCC;

Vos =V

CC or GND

5.5 −−1.0 −10 −40 µA

CIinput capacitance

of enable input (E) −210−10 −10 pF

CSmaximum switch

capacitance independent I/O −410−10 −10 pF

2002 Jun 06 7

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

Type 74AHCT1G66

At recommended operating conditions; voltages are referenced to GND (ground=0V).

SYMBOL PARAMETER

TEST CONDITIONS Tamb (°C)

UNIT

OTHER VCC (V) 25 −40 to +85 −40 to +125

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

VIH HIGH-level

input voltage 4.5 to 5.5 2.0 −−2.0 −2.0 −V

VIL LOW-level

input voltage 4.5 to 5.5 −−0.8 −0.8 −0.8 V

ILI input leakage

current VI=V

CC or GND 5.5 −−0.1 −1.0 −2.0 µA

ISanalog switch

current,

OFF-state

VI=V

IH or VIL;

|VS|=V

CC −GND;

see Fig.5

5.5 −−0.1 −1.0 −4.0 µA

analog switch

current,

ON-state

VI=V

IH or VIL;

|VS|=V

CC −GND;

see Fig.6

5.5 −−0.1 −1.0 −4.0 µA

ICC quiescent

supply current VI=V

CC or GND;

Vis = GND or VCC;

Vos =V

CC or GND

5.5 −−1.0 −10 −40 µA

∆ICC additional

quiescent

supply current

VI= 3.4 V;

other inputs at

VCC or GND;

IO=0

5.5 −−1.35 −1.5 −1.5 mA

CIinput

capacitanceof

enable

input (E)

−210−10 −10 pF

CSmaximum

switch

capacitance

independent I/O −410−10 −10 pF

2002 Jun 06 8

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

Type 74AHC1G66 and 74AHCT1G66

For 74AHC1G66: VCC = 2.0, 3.0, 4.5 and 5.5 V; or 74AHCT1G66: VCC = 4.5 and 5.5 V.

Note

1. At supply voltage approaching 2 V, the analog switch ON-resistance becomes extremely non-linear. Therefore, it is

recommended that these devices are used to transmit digital signals only, when using this supply voltage.

SYMBOL PARAMETER TEST

CONDITIONS

Tamb (°C)

UNIT25 −40 to +85 −40 to +125

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

VCC = 2.0 V; IS= 1 mA; VI=V

IH or VIL;see Figs 7 and 8

RON ON-resistance

(peak) Vis =V

CC to GND −148(1) −−−−−Ω

ON-resistance

(rail) Vis = GND −30 −−−−−Ω

is =V

CC −28 −−−−−Ω

CC = 3.0 to 3.6 V; IS= 10 mA; VI=V

IH or VIL;see Figs 7 and 8

RON ON-resistance

(peak) Vis =V

CC to GND −28 50 −70 −110 Ω

ON-resistance

(rail) Vis = GND −20 50 −65 −90 Ω

Vis =V

CC −18 50 −65 −90 Ω

VCC = 4.5 to 5.5 V; IS= 10 mA; VI=V

IH or VIL;see Figs 7 and 8

RON ON-resistance

(peak) Vis =V

CC to GND −15 30 −40 −60 Ω

ON-resistance

(rail) Vis = GND −15 22 −26 −40 Ω

Vis =V

CC −13 22 −26 −40 Ω

2002 Jun 06 9

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

handbook, full pagewidth

MNA079

I = VCC or GND VO = GND or VCC

LOW

(from enable input)

GND

Fig.5 Test circuit for measuring OFF-state current.

handbook, full pagewidth

MNA080

I = VCC or GND VO (open circuit)

HIGH

(from enable input)

GND

Fig.6 Test circuit for measuring ON-state current.

handbook, full pagewidth

MNA629

Vis = 0 to VCC

GND

HIGH

(from enable input)

GND

Fig.7 Test circuit for measuring ON-resistance (RON).

2002 Jun 06 10

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

handbook, halfpage

0246

is (V)

RON

(Ω)

MNA630

VCC = 3.0 V

4.5 V 5.5 V

Fig.8 TypicalON-resistance as afunction of input

voltage.

2002 Jun 06 11

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

AC CHARACTERISTICS

Type 74AHC1G66

GND = 0 V; tr=t

f≤3ns.

Note

1. Typical values are measured at VCC = 2.0 V; VCC = 3.3 V or VCC = 5.0 V and Tamb =25°C.

SYMBOL PARAMETER

TEST CONDITIONS Tamb (°C)

UNIT

WAVEFORMS CL

(pF) 25 −40 to +85 −40 to +125

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

VCC = 2.0 V; RL=1kΩ; note 1

tPHL/tPLH propagation delay

Vis to Vos

see Figs 13 and 16 50 −2.2 5.0 −6.0 −7.0 ns

tPZH/tPZL turn-on time

EtoV

see Figs 14 and 16 15 −7.0 25.0 −33.0 −40.0 ns

50 −11.0 35.0 −46.0 −57.0 ns

tPHZ/tPLZ turn-off time

EtoV

see Figs 14 and 16 15 −9.0 25.0 −33.0 −40.0 ns

50 −13.0 35.0 −46.0 −57.0 ns

VCC = 3.0 to 3.6 V; RL=1kΩ; note 1

tPHL/tPLH propagation delay

Vis to Vos

see Figs 13 and 16 50 −1.0 2.0 −3.0 −4.0 ns

tPZH/tPZL turn-on time

EtoV

see Figs 14 and 16 15 −4.0 11.0 −14.0 −18.0 ns

50 −5.8 15.0 −20.0 −25.0 ns

tPHZ/tPLZ turn-off time

EtoV

see Figs 14 and 16 15 −6.0 11.0 −14.0 −18.0 ns

50 −8.4 15.0 −20.0 −25.0 ns

VCC = 4.5 to 5.5 V; RL=1kΩ; note 1

tPHL/tPLH propagation delay

Vis to Vos

see Figs 13 and 16 50 −0.6 1.0 −2.0 −3.0 ns

tPZH/tPZL turn-on time

EtoV

see Figs 14 and 16 15 −3.0 8.0 −10.0 −13.0 ns

50 −4.4 11.0 −13.0 −17.0 ns

tPHZ/tPLZ turn-off time

EtoV

see Figs 14 and 16 15 −5.0 8.0 −10.0 −13.0 ns

50 −6.1 11.0 −13.0 −17.0 ns

2002 Jun 06 12

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

74AHCT1G66

GND = 0 V; tr=t

f≤3ns.

Note

1. All typical values are measured at VCC =5V.

TYPE 74AHC1G66 AND 74AHCT1G66

Recommended conditions and typical values. GND = 0 V; tr=t

f=3ns.V

is is the input voltage at pins Yor Z, whichever

is assigned as an input. Vos is the output voltage at pin Yor Z, whichever is assigned as an output.

Notes

1. Adjust input voltage Vis is 0 dBm level (0 dBm=1mWinto 600 Ω).

2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBm=1mWinto 50 Ω).

SYMBOL PARAMETER

TEST CONDITIONS Tamb (°C)

UNIT

WAVEFORMS CL

(pF) 25 −40 to +85 −40 to +125

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

VCC = 4.5 to 5.5 V; RL=1kΩ; note 1

tPHL/tPLH propagation delay

Vis to Vos

see Figs 13 and 16 50 −0.7 1.0 −2.0 −3.0 ns

tPZH/tPZL turn-on time

EtoV

see Figs 14 and 16 15 −3.0 7.0 −10.0 −13.0 ns

50 −4.7 10.0 −13.0 −17.0 ns

tPHZ/tPLZ turn-off time

EtoV

see Figs 14 and 16 15 −5.0 8.0 −10.0 −13.0 ns

50 −6.5 11.0 −13.0 −17.0 ns

SYMBOL PARAMETER TEST CONDITIONS Vis(p-p) (V) VCC (V) TYPICAL UNIT

sine-wave distortion at

fin = 1 kHz RL=10kΩ;

L= 50 pF; see Fig.9 2.5 3.0 to 3.6 0.025 %

4.0 4.5 to 5.5 0.015 %

sine-wave distortion at

fin = 10 kHz RL=10kΩ;

L= 50 pF; see Fig.9 2.5 3.0 to 3.6 0.025 %

4.0 4.5 to 5.5 0.015 %

switch OFF signal

feed-through RL= 600 Ω;

CL= 50 pF;

f = 1 MHz; see Fig.10

note 1 3.0 to 3.6 −50 dB

4.5 to 5.5 −50 dB

fmax minimumfrequencyresponse

(−3 dB) RL=50Ω;

L= 10 pF;

see Figs 11 and 12

note 2 3.0 to 3.6 230 MHz

4.5 to 5.5 280 MHz

2002 Jun 06 13

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

handbook, full pagewidth

MNA632

10 µF

Vos

VCC

Vis

CLDISTORTION

METER

Z/YY/Z

GND

fin = 1 kHz

sine-wave channel

Fig.9 Test circuit for measuring sine-wave distortion.

handbook, full pagewidth

MNA633

0.1 µF

Vos

VCC

Vis

CLdB

Z/YY/Z

GND

channel

OFF

Fig.10 Test circuit for measuring switch OFF signal feed-through.

2002 Jun 06 14

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

handbook, full pagewidth

−4

(dB)

−2

MNA643

104105106107108109

f (Hz)

Fig.11 Typical frequency response.

Test conditions: VCC = 4.5 V; GND = 0 V; RL=50Ω; RSOURCE =1kΩ.

handbook, full pagewidth

MNA631

0.1 µF

Vos

VCC

Vis

CLdB

Z/YY/Z

GND

channel

sine-wave

Fig.12 Test circuit for measuring minimum frequency response.

Adjust input voltage to obtain 0 dBm at Vos when f = 1 MHz.

After set-up, the frequency is increased to obtain a reading of −3dBatV

os.

2002 Jun 06 15

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

AC WAVEFORMS

handbook, halfpage

MNA593

tPLH tPHL

Vis

Vos

GND

VOH

VOL

VIINPUT

REQUIREMENTS VMINPUT

GND to VCC 50% VCC

VOL and VOH are typical output voltage drop that occur with the output load.

Fig.13 The input (Vis) to output (Vos) propagation delays.

handbook, full pagewidth

MNA634

tPLZ

tPHZ

outputs

disabled outputs

enabled

VOH − 0.3 V

VOL + 0.3 V

outputs

enabled

output

LOW-to-OFF

OFF-to-LOW

output

HIGH-to-OFF

OFF-to-HIGH

E input

VCC

VOL

VOH

GND

tPZL

tPZH

Fig.14 The turn-on and turn-off times.

TYPE VIINPUT

REQUIREMENTS VMINPUT VMOUTPUT

AHC1G GND to VCC 50% VCC 50% VCC

AHCT1G GND to 3.0 V 1.5 V 1.5 V

2002 Jun 06 16

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

handbook, full pagewidth

MNA595

tTHL (tf)t

TLH (tr)

positive

input pulse

negative

input pulse

0 V

amplitude

90%

10%

tTLH (tr)t

THL (tf)

0 V

amplitude

90%

10%

Fig.15 Input pulse definitions.

FAMILY VIINPUT

REQUIREMENTS VMINPUT

AHC1G GND to VCC 50% VCC

AHCT1G GND to 3.0 V 1.5 V

tr=t

f= 3 ns, when measuring fmax, there is no constraint on tr,t

with 50% duty factor.

handbook, full pagewidth

open

GND

VCC

VIVO

MNA635

D.U.T.

1 kΩ

PULSE

GENERATOR

Vis

Fig.16 Load circuitry for switching times.

Definitions for test circuit:

CL= load capacitance including jig and probe capacitance (see “AC characteristics” for values).

RT= termination resistance should be equal to the output impedance Zo of the pulse generator.

TEST S1Vis

tPLH/tPHL open pulse

tPLZ/tPZL VCC GND

tPHZ/tPZH GND VCC

2002 Jun 06 17

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

PACKAGE OUTLINES

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT353

wBM

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT353

UNIT A1

max bpcD

E (2) e1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28SC-88A

2002 Jun 06 18

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT753 SC-74A

wBM

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT753

UNIT A1bpcDEH

Qywv

mm 0.100

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

1.1

0.9

02-04-16

2002 Jun 06 19

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

SOLDERING

Introduction to soldering surface mount packages

Thistextgivesaverybriefinsighttoa complex technology.

A more in-depth account of soldering ICs can be found in

our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for

certainsurfacemount ICs, but itisnotsuitableforfinepitch

SMDs. In these situations reflow soldering is

recommended.

Reﬂow soldering

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

totheprinted-circuit board by screenprinting,stencilling or

pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,

convection or convection/infrared heating in a conveyor

type oven. Throughput times (preheating, soldering and

cooling) vary between 100 and 200 seconds depending

on heating method.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 220 °C for

thick/large packages, and below 235 °C for small/thin

packages.

Wave soldering

Conventional single wave soldering is not recommended

forsurfacemount devices (SMDs) or printed-circuitboards

with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering

method was specifically developed.

If wave soldering is used the following conditions must be

observed for optimal results:

•Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

•For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

•Forpackageswith leads on foursides,thefootprintmust

be placed at a 45°angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

2002 Jun 06 20

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

Suitability of surface mount IC packages for wave and reﬂow soldering methods

Notes

1. Formoredetailedinformation on the BGA packagesrefertothe

“(LF)BGAApplicationNote

”(AN01026);ordera copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE(1) SOLDERING METHOD

WAVE REFLOW(2)

BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable

HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,

HVSON, SMS not suitable(3) suitable

PLCC(4), SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended(4)(5) suitable

SSOP, TSSOP, VSO not recommended(6) suitable

2002 Jun 06 21

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentation orwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseof any of theseproducts,conveysnolicenceortitle

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2002 Jun 06 22

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

NOTES

2002 Jun 06 23

Philips Semiconductors Product speciﬁcation

Bilateral switch 74AHC1G66; 74AHCT1G66

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands 613508/03/pp24 Date of release: 2002 Jun 06 Document order number: 9397 750 09711