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© 2000 IXYS All rights reserved
Features
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 2 0 0 V
VGH(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 mA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 10 mW
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C, Chip capability 1 80 A
IL(RMS) Terminal current limit 100 A
IDM TC = 25°C, pulse width limited by TJM 720 A
IAR TC = 25°C36A
EAR TC = 25°C64mJ
EAS TC = 25°C4J
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 700 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL£ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
98551B (7/00)
D
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 180N20 VDSS = 200 V
ID25 = 180 A
RDS(on) = 10 m W
trr < 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
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© 2000 IXYS All rights reserved
IXFN 180N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 15 V; ID = 60A, pulse test 9 0 1 3 0 S
Ciss 22000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3800 pF
Crss 600 pF
td(on) 55 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 85 ns
td(off) RG= 1 W (External), 1 8 0 ns
tf56 ns
Qg(on) 660 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 120 nC
Qgd 270 nC
RthJC 0.18 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 1 80 A
ISM Repetitive; 720 A
pulse width limited by TJM
VSD IF = 100A, VGS = 0 V, 1. 2 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = 50A, -di/dt = 100 A/ms, VR = 100 V TJ = 25°C 250 ns
QRM TJ = 25°C 1.5 mC
IRM 10 A
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
