MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V5964
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
DESCRIPTION
OUTLINE DRAWING
Unit: millimeters (inches)
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 10W (TYP.) @ f=5.9~6.4GHz
High power gain
GLP = 10 dB (TYP.) @ f=5.9~6.4GHz
High power added efficiency
P.A.E. = 30 % (TYP.) @ f=5.9~6.4GHz
Low distortion [ item -51 ]
IM3= -49 dBc(TYP.) @Po=29(dBm) S.C.L.
APPLICATION
item 01 : 5.9~6.4 GHz band power amplifier
item 51 : 5.9~6.4 GHz band digital radio communication
QUALITY GRADE
IG (1): GATE
(2): SOURCE (FLANGE)
RECOMMENDED BIAS CONDITIONS GF-18 (3): DRAIN
VDS = 10(V)
ID = 2.4 (A)
Rg = 50(ohm) Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO Gate to source voltage -15 V
ID Drain current 7.5 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT Total power dissipation *1 42.8 W
Tch Channel temperature 175 deg.C
Tstg Storage temperature -65 / +175 deg.C
*1 : Tc=25 deg.C
ELECTRICAL CHARACTERISTICS (Ta=25 deg.C) Limits
Min. Typ. Max.
IDSS Saturated drain current VDS=3V, VGS=0V -4.5 6A
gm Transconductance VDS=3V, ID=2.2A -2-S
VGS(off) Gate to source cut-off voltage VDS=3V, ID=40mA -2 -3 -4 V
P1dB Output power at 1dB gain compression 39.5 40.5 -dBm
GLP Linear power gain VDS=10V, ID(RF off)=2.4A, f=5.9~6.4GHz 8 10 -dB
ID Drain current -2.4 -A
P.A.E. Power added efficiency -30 -%
IM3 3rd order IM distortion *1 -42 -49 -dBc
Rth(ch-c) Thermal resistance *2 Delta Vf method -33.5 deg.C/W
*1 : item -51, 2 tone test, Po=29dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz
*2 : Channel to case
MITSUBISHI
Oct-'03
ELECTRIC
The MGFC40V3742 is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 ~ 6.4
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
Parameter Test conditions
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
Symbol Unit
4.0+/-0.4
1.4
2MIN
2.4+/-0.2
0.1
17.4+/-0.3
R1.25
2MIN
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8.0+/-0.2
R1.2
15.8
(2)
