20ETS08STRL - Vishay [Semiconductors]

Document Number: 94340 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 28-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

Input Rectifier Diode, 20 A

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series

Vishay Semiconductors

FEATURES

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 260 °C

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21

definition

• Designed and qualified for industrial level

APPLICATIONS

• Input rectification

• Vishay Semiconductors switches and output rectifiers

which are available in identical package outlines

DESCRIPTION

The VS-20ETS...SPbF rectifier High Voltage Series has been

optimized for very low forward voltage drop, with moderate

leakage. The glass passivation technology used has reliable

operation up to 150 °C junction temperature.

PRODUCT SUMMARY

VF at 10 A < 1 V

IFSM 300 A

VRRM 800 V/1200 V

D2PAK

Base cathode

Anode Anode

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter TA = 55 °C, TJ = 125 °C

common heatsink of 1 °C/W 16.3 21 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Sinusoidal waveform 20 A

VRRM 800/1200 V

IFSM 300 A

VF20 A, TJ = 25 °C 1.1 V

TJ- 40 to 150 °C

VOLTAGE RATINGS

PART NUMBER

VRRM, MAXIMUM PEAK

REVERSE VOLTAGE

VRSM, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

IRRM AT 150 °C

VS-20ETS08SPbF 800 900 1

VS-20ETS12SPbF 1200 1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20

Maximum peak one cycle

non-repetitive surge current IFSM

10 ms sine pulse, rated VRRM applied 250

10 ms sine pulse, no voltage reapplied 300

Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 316 A2s

10 ms sine pulse, no voltage reapplied 442

Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94340

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Jul-10

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series

Vishay Semiconductors Input Rectifier Diode, 20 A

Note

(1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W

For recommended footprint and soldering techniques refer to application note #AN-994

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.1 V

Forward slope resistance rtTJ = 150 °C 10.4 m

Threshold voltage VF(TO) 0.85 V

Maximum reverse leakage current IRM

TJ = 25 °C VR = Rated VRRM

0.1 mA

TJ = 150 °C 1.0

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C

Maximum thermal resistance,

junction to case RthJC DC operation 1.3

°C/W

Maximum thermal resistance,

junction to ambient RthJA (1) For D2PAK version 62

Typical thermal resistance,

case to heatsink RthCS Mounting surface, smooth and greased 0.5

Approximate weight 2g

0.07 oz.

Mounting torque minimum 6.0 (5.0) kgf · cm

(lbf · in)

maximum 12 (10)

Marking device Case style D2PAK (SMD-220) 20ETS08S

20ETS12S

Document Number: 94340 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 28-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series

Input Rectifier Diode, 20 A Vishay Semiconductors

Fig. 1 - Current Rating Characteristics

Fig. 2 - Current Rating Characteristics

Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

120

110

100

130

140

150

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

46821012

20 22

14 16 18

30° 60° 90° 120°

180°

20ETS.. Series

RthJC (DC) = 1.3 °C/W

Conduction angle

140

150

130

120

110

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

1051520

30 35

30° 60°

90°

120°

180°

20ETS.. Series

RthJC (DC) = 1.3 °C/W

Conduction period

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

420 24

81216

RMS limit

180°

120°

90°

60°

30°

20ETS.. Series

TJ = 150 °C

Conduction angle

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

20 25

51015

180°

120°

90°

60°

30°

RMS limit

20ETS.. Series

TJ = 150 °C

Conduction period

300

250

200

150

100

Peak Half Sine Wave

Forward Current (A)

Number of Equal Amplitude Half

Cycle Current Pulse (N)

10 100

20ETS.. Series

At any rated load condition and with

rated V

RRM

applied following surge.

Initial T

= 150 °C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

300

250

200

150

100

Peak Half Sine Wave

Forward Current (A)

Pulse Train Duration (s)

0.1 1

0.01

20ETS.. Series

Maximum non-repetitive surge current

versus pulse train duration.

Initial TJ = 150 °C

No voltage reapplied

Rated VRRM reapplied

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94340

4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Jul-10

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series

Vishay Semiconductors Input Rectifier Diode, 20 A

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance ZthJC Characteristics

100

1000

Instantaneous Forward Current (A)

Instantaneous Forwad Voltage (V)

1.00.5 1.5 2.0 3.5 4.0

2.5 3.0

TJ = 25°C

TJ = 150°C

20ETS.. Series

0.01

0.1

0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

ZthJC - Transient Thermal

Impedance (°C/W)

Steady state value

(DC operation)

Single pulse

D = 0.50

D = 0.33

D = 0.25

D = 0.17

D = 0.08 20ETS.. Series

Document Number: 94340 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 28-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series

Input Rectifier Diode, 20 A Vishay Semiconductors

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95046

Part marking information www.vishay.com/doc?95054

Packaging information www.vishay.com/doc?95032

SPICE model www.vishay.com/doc?95409

2- Current rating (20 = 20 A)

3- Circuit configuration

4- Package:

T = TO-220AC

S = TO-220 D2PAK (SMD-220) version

5- Type of silicon:

S = Standard recovery rectifier

PbF = Lead (Pb)-free

6- Voltage code x 100 = VRRM

8- None = Tube

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

E = Single diode

08 = 800 V

12 = 1200 V

1- HPP product suffix

Device code

51 324

6789

VS- 20 E T S 12 S TRL PbF

Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 31-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

D2PAK

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters and inches

Notes

(1) Dimensioning and tolerancing per ASME Y14.5 M-1994

(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outmost extremes of the plastic body

(3) Thermal pad contour optional within dimension E, L1, D1 and E1

(4) Dimension b1 and c1 apply to base metal only

(5) Datum A and B to be determined at datum plane H

(6) Controlling dimension: inch

(7) Outline conforms to JEDEC outline TO-263AB

SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Detail A

± 0.004 B

Lead tip

(3)

View A - A

(E)

(D1)

Detail “A”

Rotated 90 °CW

Scale: 8:1

Gauge

plane

0° to 8°

Seating

plane

Section B - B and C - C

Scale: None

(4)

(b, b2)

b1, b3

Base

Metal

Plating

Conforms to JEDEC outline D2PAK (SMD-220)

132

(2)(3)

(2)

2 x b

2 x b2

0.010 AB

(3)

2 x

Pad layout

MIN.

11.00

(0.43)

MIN.

9.65

(0.38)

MIN.

3.81

(0.15)

MIN.

2.32

(0.08)

17.90 (0.70)

15.00 (0.625)

2.64 (0.103)

2.41 (0.096)

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

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Revision: 12-Mar-12 1Document Number: 91000

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.